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纳米硅/单晶硅异质结MAGFET不等位电势补偿研究 被引量:1
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作者 赵晓锋 温殿忠 《传感技术学报》 CAS CSCD 北大核心 2010年第3期363-366,共4页
采用CMOS工艺制作的纳米硅/单晶硅异质结MAGFET存在不等位电势VHO,不等位电势VHO随工作电压VDS绝对值增加而增大。通过在纳米硅/单晶硅异质结MAGFET栅极上外加偏置电压VGS,调整导电沟道等效电阻阻值进行不等位电势补偿。实验结果表明,... 采用CMOS工艺制作的纳米硅/单晶硅异质结MAGFET存在不等位电势VHO,不等位电势VHO随工作电压VDS绝对值增加而增大。通过在纳米硅/单晶硅异质结MAGFET栅极上外加偏置电压VGS,调整导电沟道等效电阻阻值进行不等位电势补偿。实验结果表明,当外加磁场B=0时,工作电压VDS恒定时,随栅极偏置电压VGS绝对值增加,纳米硅/单晶硅异质结MAGFET不等位电势VHO逐渐接近零位输出;采用栅极偏置电压进行不等位电势补偿较外加补偿电阻方法可以使磁传感器灵敏度得到提高,在工作电压VDS为-1.0 V时磁灵敏度约提高18%。 展开更多
关键词 纳米/单晶异质结MAGFET 磁传感器 不等位电势 磁灵敏度
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利用MEMS技术研制硅脉象传感器 被引量:3
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作者 王璐 温殿忠 +2 位作者 刘红梅 田丽 莫兵 《传感技术学报》 CAS CSCD 北大核心 2010年第9期1226-1231,共6页
利用MEMS技术在N型<100>晶向的单晶硅衬底上设计并制作了以纳米硅/单晶硅异质结为源极和漏极的P-MOSFETs脉象传感器。在方形硅膜上制作四个以纳米硅/单晶硅异质结为源极和漏极P-MOSFETs,并将P-MOSFETs的沟道电阻设计成惠斯通电桥... 利用MEMS技术在N型<100>晶向的单晶硅衬底上设计并制作了以纳米硅/单晶硅异质结为源极和漏极的P-MOSFETs脉象传感器。在方形硅膜上制作四个以纳米硅/单晶硅异质结为源极和漏极P-MOSFETs,并将P-MOSFETs的沟道电阻设计成惠斯通电桥结构,从而实现对微小脉象信号的准确检测。实验结果表明,该硅脉象传感器在恒压源-3.0V供电条件下,灵敏度为1.623mV/kPa,准确度为2.029%F.S。 展开更多
关键词 MEMS 脉象传感器 MOSFET 纳米/单晶异质结
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纳米硅/单晶硅异质结二极管的电学特性 被引量:3
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作者 徐刚毅 王天民 王金良 《功能材料与器件学报》 CAS CSCD 2001年第1期45-50,共6页
利用高真空 PECVD系统在 p型单晶硅上沉积掺磷 n型纳米硅薄层 (nc-Si:H),形成纳米硅 /单晶硅 Np异质结二极管 ,通过 C-V和 J-V测试研究了二极管的电学性质。 C-V特性指出该异质结为突变型。 J-V特性表明二极管具有很好的温度稳定性和... 利用高真空 PECVD系统在 p型单晶硅上沉积掺磷 n型纳米硅薄层 (nc-Si:H),形成纳米硅 /单晶硅 Np异质结二极管 ,通过 C-V和 J-V测试研究了二极管的电学性质。 C-V特性指出该异质结为突变型。 J-V特性表明二极管具有很好的温度稳定性和整流特性。正偏压时二极管存在两种输运机制:小偏压时( <0.8V)二极管电流由耗尽层纳米硅薄层一侧的载流子复合过程决定,纳米硅薄层由于能带弯曲而减小了禁带宽度,这是该二极管温度稳定性好的根本原因;大偏压( >1.0V)时电输运符合电荷限制电流( SCLC)模型。负偏压时电流主要来自空间电荷区中的产生电流。 展开更多
关键词 纳米/单晶 异质结二极管 输运机制 电学特性
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Fabrication and Field Emission of Silicon Nano-Crystalline Film 被引量:1
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作者 王伟明 郁可 +2 位作者 丁艳芳 李琼 朱自强 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第6期639-644,共6页
The silicon nano-crystalline (nc-Si) film is fabricated on <100> orientation,0.01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si ... The silicon nano-crystalline (nc-Si) film is fabricated on <100> orientation,0.01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si are examined by the scanning electron microscopy,transmission electron microscopy,and X-ray diffraction spectroscopy,respectively.The average size of particle is estimated by Raman spectroscopy.The results show that the particle size of nc-Si film is scattered from 10nm to 20nm,the alignment is compact,the orientation is uniform,the expansion of lattice constant is negligible,and mechanical robustness and stability are good.The correlations between film structure and the experiment parameters such as etching time,HF concentration,and etching current density are discussed.As a potential application,efficient field emission is observed from the nc-Si film,and the turn-on field is about 3V/μm at 0.1μA/cm 2 of current density,which is close to carbon nanotube film's. 展开更多
关键词 NC-SI anodic etching uniform orientation field emission
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Molecular Dynamics of Nanometric Processing of Ion Implanted Monocrystalline Silicon Surfaces
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作者 陈耘辉 房丰洲 +1 位作者 张效栋 胡小唐 《Transactions of Tianjin University》 EI CAS 2014年第3期203-209,共7页
Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantatio... Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantation and nano-indentation using radial distribution function and geometric criterion damage detection. Nano-indentation is simulated to study the changes of mechanical property. Implantation analysis shows the existence of amorphous phase. Indentation process shows the lattice evolution, which is beneficial for reducing fractures during processing. The indentation results reveal the reduction of brittleness and hardness of the implanted surface. The ion fluence is in direct proportion to the damage, and inverse to the hardness of the material. Experiments of ion implar, tation, nanoindentation, nano-scratching and nanometric cutting were carried out to verify the simulation results. 展开更多
关键词 molecular dynamics ion implantation monocrystalline silicon nanometric cutting
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Quantitative analysis of nanoscale deformation fields of a crack-tip in single-crystal silicon 被引量:2
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作者 ZHAO ChunWang XING YongMing 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第6期1088-1092,共5页
A mode II crack in single-crystal silicon was investigated experimentally using high-resolution transmission electron microscopy.Geometric phase analysis and numerical moiré method were employed to map the deform... A mode II crack in single-crystal silicon was investigated experimentally using high-resolution transmission electron microscopy.Geometric phase analysis and numerical moiré method were employed to map the deformation fields of the crack-tip area.The normal strain field maps of the crack-tip area indeed showed the deformation occurs primarily in the vicinity of the dislocations and the normal strains are near zero in the crack-tip area.The shear strain field map shows that the relatively large shear strain is in the crack-tip area.The experimental results were compared with the predictions of linear elastic fracture mechanics.The comparison shows that measured strain distribution ahead of the crack-tip agrees with the predictions of linear elastic fracture mechanics up to 1 nm from the crack-tip. 展开更多
关键词 CRACK-TIP STRAIN high-resolution transmission electron microscopy geometric phase analysis
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