提出了一种改进型的单极全桥子模块结构MUFBSM(modified unipolar full bridge sub module),其本质是在单极全桥子模块结构UFBSM(unipolar full bridge sub module)的二极管支路添加一个串联电阻。系统正常工作时,MUFBSM不会增加额外的...提出了一种改进型的单极全桥子模块结构MUFBSM(modified unipolar full bridge sub module),其本质是在单极全桥子模块结构UFBSM(unipolar full bridge sub module)的二极管支路添加一个串联电阻。系统正常工作时,MUFBSM不会增加额外的损耗;当系统检测到直流侧故障并闭锁后,MUFBSM中的串联电阻接入故障电流通路,增强了故障回路的阻尼效果并消耗部分系统储存能量,加快了故障电流清除速度,降低了子模块电容电压上升幅值。然后分析了UFBSM和MUFBSM混合型模块化多电平变换器的故障机理,分析了串联电阻的取值依据。Matlab/Simulink仿真结果验证了MUFBSM的可行性和有效性。展开更多
Rotational isomerism effects on the optical spectra of a push-pull nonlinear optical chro-mophore 2-dicyanomethylen-3-cyano-4-f2-[E-（4-N,N-di（2-acetoxyethyl）-amino）-phenylene-（3,4-dibutyl）-thien-5]-E-vinylg-5,5-...Rotational isomerism effects on the optical spectra of a push-pull nonlinear optical chro-mophore 2-dicyanomethylen-3-cyano-4-f2-[E-（4-N,N-di（2-acetoxyethyl）-amino）-phenylene-（3,4-dibutyl）-thien-5]-E-vinylg-5,5-dimethyl-2,5-dihydrofuran （FTC） in a few solvents have been studied using the time-dependent density functional theory in combination with the polarizable continuum model. It is shown that the maximum absorption peaks of the ro-tamers have difference of nearly 30 nm both in vacuum and in solutions. The population of the rotamers changes a lot in different solvents. Based on the geometries optimized by Hartree-Fock method, the Maxwell-Boltzmann averaged absorption has been calculated and the maximum absorption peak is in good agreement with experiment. It indicates that the bond length alternation can have an important effect on the optical spectra.展开更多
We present the extended hydrogen atom and monopole-hydrogen atom theory through generalizing the usual hydrogen atom model and with a monopole model respectively, in which Y (sl(2) ) algebras are realized. We derive t...We present the extended hydrogen atom and monopole-hydrogen atom theory through generalizing the usual hydrogen atom model and with a monopole model respectively, in which Y (sl(2) ) algebras are realized. We derive the Hamiltonians of the two models based on the Y(sl(2) ) and the generalized Pauli equation. The energy spectra of the systems are also given in terms of Yangian algebra and quantum mechanics.展开更多
A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge ar...A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.展开更多
By employing the dielectric continuum model and Loudon＇s uniaxial crystal model, the interface optical （IO） phonon modes in a freestanding quasi-one-dimensional （Q1D） wurtzite rectangular quantum wire are derived...By employing the dielectric continuum model and Loudon＇s uniaxial crystal model, the interface optical （IO） phonon modes in a freestanding quasi-one-dimensional （Q1D） wurtzite rectangular quantum wire are derived and analyzed. Numerical calculation on a freestanding wurtzite GaN quantum wire is performed. The resulte reveal that the dispersion frequencies of IO modes sensitively depend on the geometric structures of the Q1D wurtzite rectangular quantum wires, the free wave-number kz in z-direction and the dielectric constant of the nonpolar matrix. The degenerating behavior of the IO modes in Q1D wurtzite rectangular quantum wire has been clearly observed in the case of small wave-number kz and Iarge ratio of length to width of the rectangular crossing profile. The limited frequency behaviors of IO modes have been analyzed deeply, and detailed comparisons with those in wurtzite planar quantum wells and cylindrical quantum wires are also done. The present theories can be looked on as a generalization of that in isotropic rectangular quantum wires, and it can naturally reduce to the case of Q1D isotropic quantum wires once the anisotropy of the wurtzite material is ignored.展开更多
文摘提出了一种改进型的单极全桥子模块结构MUFBSM(modified unipolar full bridge sub module),其本质是在单极全桥子模块结构UFBSM(unipolar full bridge sub module)的二极管支路添加一个串联电阻。系统正常工作时,MUFBSM不会增加额外的损耗;当系统检测到直流侧故障并闭锁后,MUFBSM中的串联电阻接入故障电流通路,增强了故障回路的阻尼效果并消耗部分系统储存能量,加快了故障电流清除速度,降低了子模块电容电压上升幅值。然后分析了UFBSM和MUFBSM混合型模块化多电平变换器的故障机理,分析了串联电阻的取值依据。Matlab/Simulink仿真结果验证了MUFBSM的可行性和有效性。
基金ACKNOWLEDGMENTS This work was supported by Young Scientists Fund of the National Natural Science Foundation of China （No.10904085）.
文摘Rotational isomerism effects on the optical spectra of a push-pull nonlinear optical chro-mophore 2-dicyanomethylen-3-cyano-4-f2-[E-（4-N,N-di（2-acetoxyethyl）-amino）-phenylene-（3,4-dibutyl）-thien-5]-E-vinylg-5,5-dimethyl-2,5-dihydrofuran （FTC） in a few solvents have been studied using the time-dependent density functional theory in combination with the polarizable continuum model. It is shown that the maximum absorption peaks of the ro-tamers have difference of nearly 30 nm both in vacuum and in solutions. The population of the rotamers changes a lot in different solvents. Based on the geometries optimized by Hartree-Fock method, the Maxwell-Boltzmann averaged absorption has been calculated and the maximum absorption peak is in good agreement with experiment. It indicates that the bond length alternation can have an important effect on the optical spectra.
文摘We present the extended hydrogen atom and monopole-hydrogen atom theory through generalizing the usual hydrogen atom model and with a monopole model respectively, in which Y (sl(2) ) algebras are realized. We derive the Hamiltonians of the two models based on the Y(sl(2) ) and the generalized Pauli equation. The energy spectra of the systems are also given in terms of Yangian algebra and quantum mechanics.
文摘A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.
基金The project supported by the Science and Technology Project of Advanced Academy of Guangzhou City under Grant No. 2060. The author acknowledges the detailed and valuable discussions with Prof. J.J. Shi.
文摘By employing the dielectric continuum model and Loudon＇s uniaxial crystal model, the interface optical （IO） phonon modes in a freestanding quasi-one-dimensional （Q1D） wurtzite rectangular quantum wire are derived and analyzed. Numerical calculation on a freestanding wurtzite GaN quantum wire is performed. The resulte reveal that the dispersion frequencies of IO modes sensitively depend on the geometric structures of the Q1D wurtzite rectangular quantum wires, the free wave-number kz in z-direction and the dielectric constant of the nonpolar matrix. The degenerating behavior of the IO modes in Q1D wurtzite rectangular quantum wire has been clearly observed in the case of small wave-number kz and Iarge ratio of length to width of the rectangular crossing profile. The limited frequency behaviors of IO modes have been analyzed deeply, and detailed comparisons with those in wurtzite planar quantum wells and cylindrical quantum wires are also done. The present theories can be looked on as a generalization of that in isotropic rectangular quantum wires, and it can naturally reduce to the case of Q1D isotropic quantum wires once the anisotropy of the wurtzite material is ignored.
