Beam shaping is required for semiconductor lasers to achieve high optical fiber coupling efficiency in many applications.But the positioning errors on optics may reduce beam shaping effects,and then lead to low optica...Beam shaping is required for semiconductor lasers to achieve high optical fiber coupling efficiency in many applications.But the positioning errors on optics may reduce beam shaping effects,and then lead to low optical fiber coupling efficiency.In this work,the positioning errors models for the single emitter laser diode beam shaping system are established.Moreover,the relationships between the errors and the beam shaping effect of each shapers are analysed.Subsequently,the relationship between the errors and the optical fiber coupling efficiency is analysed.The result shows that position errors in the Z axis direction on the fast axis collimator have the greatest influence on the shaping effect,followed by the position errors in the Z axis direction on the converging lens,which should be strictly suppressed in actual operation.Besides,the position errors have a significant influence on the optical fiber coupling efficiency and need to be avoided.展开更多
A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge ar...A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.展开更多
基金Project(51475479) supported by the National Natural Science Foundation of ChinaProject(2017YFB1104800) supported by the National Key Research and Development Program of China+2 种基金Project(2016GK2098) supported by the Key Research and Development Program of Hunan Province,ChinaProject(ZZYJKT2017-07) supported by the State Key Laboratory of High Performance Complex Manufacturing,Central South University,ChinaProject(JMTZ201804) supported by the Key Laboratory for Precision&Non-traditional Machining of Ministry of Education,Dalian University of Technology,China
文摘Beam shaping is required for semiconductor lasers to achieve high optical fiber coupling efficiency in many applications.But the positioning errors on optics may reduce beam shaping effects,and then lead to low optical fiber coupling efficiency.In this work,the positioning errors models for the single emitter laser diode beam shaping system are established.Moreover,the relationships between the errors and the beam shaping effect of each shapers are analysed.Subsequently,the relationship between the errors and the optical fiber coupling efficiency is analysed.The result shows that position errors in the Z axis direction on the fast axis collimator have the greatest influence on the shaping effect,followed by the position errors in the Z axis direction on the converging lens,which should be strictly suppressed in actual operation.Besides,the position errors have a significant influence on the optical fiber coupling efficiency and need to be avoided.
文摘A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.
