Numerical simulation of multiphase flows in processing equipment in industry with two-fluid models and Eulerian-Lagrangian approaches requires the constitutive equations describing the interactions between the dispers...Numerical simulation of multiphase flows in processing equipment in industry with two-fluid models and Eulerian-Lagrangian approaches requires the constitutive equations describing the interactions between the dispersed phase of high concentration and the continuous phase. The status of research on the forces on dispersed solid and fluid particles is reviewed in this article. As compared with the knowledge on drag of single solid particles study on panicle swarms and on other forces is not sufficient to meet the demand of reliable and efficient numerical simulation of multiphase flows. Thus, thorough study on the panicle swarms becomes the key to accurate multi-scale simulation of multiphase flows. Besides, the development of efficient algorithm dealing with the non-uniformity on both equipment and mesoscopic scales is recognized as an important issue to be resolved. The research topics in the near future are suggested.展开更多
Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is studied.Based on the calibrated 3-D models by process simulation,it is found that the amo...Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is studied.Based on the calibrated 3-D models by process simulation,it is found that the amount of charge collected increases linearly as the linear energy transfer(LET) increases for both n-type and p-type FinFET hits,but the single event transient(SET) pulse width is not linear with the incidence LET and the increasing rate will gradually reduce as the LET increases.The impacts of wafer thickness on the charge collection are also analyzed,and it is shown that a larger thickness can bring about stronger charge collection.Thus reducing the wafer thickness could mitigate the SET effect for FinFET technology.展开更多
The effect of p-well contact on the n-well potential modulation in a 90 nm bulk technology with P+ deep well is studied based on three-dimensional (3-D) TCAD device simulations. Simulation results illustrate that the ...The effect of p-well contact on the n-well potential modulation in a 90 nm bulk technology with P+ deep well is studied based on three-dimensional (3-D) TCAD device simulations. Simulation results illustrate that the p-well contact area has a great impact on the n-well potential modulation and the enhancement factor will level out as the p-well contact area increases, and that at the same time the increase of p-well doping concentration can also enhance the n-well potential modulation. However, the effect of p-well contact location on the n-well modulation is not obvious as the p-well contact distance increases. According to our simulation results, it is proposed that the p-well contact area should be cautiously designed to mitigate single event effect (SEE) in the P+ deep well technology.展开更多
Monte Carlo simulation results are reported on the single event upset(SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory(SRAM) were com...Monte Carlo simulation results are reported on the single event upset(SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory(SRAM) were compared with previous research work, which not only validated the simulation approach used herein, but also exposed the existence of saturated cross-section and the multiple bit upsets(MBUs) when the incident energy was less than 1 MeV. Additionally, it was observed that the saturated cross-section and MBUs are involved with energy loss and critical charge. The amount of deposited charge and the distribution with respect to the critical charge as the supplemental evidence are discussed.展开更多
基金Supported by the National Natural Science Foundation of China （20490206, 20676134）, the National Basic Research Program of China （2009CB623406, 2004CB217604）, the National Project of Scientific and Technical Supporting Program （2008BAF33B03） and the National High Technology Research and Development Program of China （2007AA060904）..
文摘Numerical simulation of multiphase flows in processing equipment in industry with two-fluid models and Eulerian-Lagrangian approaches requires the constitutive equations describing the interactions between the dispersed phase of high concentration and the continuous phase. The status of research on the forces on dispersed solid and fluid particles is reviewed in this article. As compared with the knowledge on drag of single solid particles study on panicle swarms and on other forces is not sufficient to meet the demand of reliable and efficient numerical simulation of multiphase flows. Thus, thorough study on the panicle swarms becomes the key to accurate multi-scale simulation of multiphase flows. Besides, the development of efficient algorithm dealing with the non-uniformity on both equipment and mesoscopic scales is recognized as an important issue to be resolved. The research topics in the near future are suggested.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60836004,61006070,and 61076025)
文摘Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is studied.Based on the calibrated 3-D models by process simulation,it is found that the amount of charge collected increases linearly as the linear energy transfer(LET) increases for both n-type and p-type FinFET hits,but the single event transient(SET) pulse width is not linear with the incidence LET and the increasing rate will gradually reduce as the LET increases.The impacts of wafer thickness on the charge collection are also analyzed,and it is shown that a larger thickness can bring about stronger charge collection.Thus reducing the wafer thickness could mitigate the SET effect for FinFET technology.
基金supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836009)the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025)
文摘The effect of p-well contact on the n-well potential modulation in a 90 nm bulk technology with P+ deep well is studied based on three-dimensional (3-D) TCAD device simulations. Simulation results illustrate that the p-well contact area has a great impact on the n-well potential modulation and the enhancement factor will level out as the p-well contact area increases, and that at the same time the increase of p-well doping concentration can also enhance the n-well potential modulation. However, the effect of p-well contact location on the n-well modulation is not obvious as the p-well contact distance increases. According to our simulation results, it is proposed that the p-well contact area should be cautiously designed to mitigate single event effect (SEE) in the P+ deep well technology.
基金supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062 and 11005134)
文摘Monte Carlo simulation results are reported on the single event upset(SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory(SRAM) were compared with previous research work, which not only validated the simulation approach used herein, but also exposed the existence of saturated cross-section and the multiple bit upsets(MBUs) when the incident energy was less than 1 MeV. Additionally, it was observed that the saturated cross-section and MBUs are involved with energy loss and critical charge. The amount of deposited charge and the distribution with respect to the critical charge as the supplemental evidence are discussed.
