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虚阴极时间相关行为的单荷电层分析
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作者 谢文楷 朱雄伟 刘盛纲 《强激光与粒子束》 EI CAS CSCD 1992年第3期357-361,共5页
用格林函数法计算圆柱腔中单荷电层的空间电荷场,分析在圆柱腔漂移管中的虚阴极时间相关行为。求出在非相对论情形下极限电荷q_L的表达式,对不同电荷值、荷电层的位置与速度随时间变化关系进行数值计算分析。给出了虚阴极直观的物理图象。
关键词 虚阴极 单荷电层 时间相关行为
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Modulating the metal/organic interface via Cu TCNQ decorated layer toward high performance bottom-contact single-crystal transistors
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作者 Liangfu He Deyang Ji +3 位作者 Erjing Wang Yonggang Zhen Huanli Dong Wenping Hu 《Science China Chemistry》 SCIE EI CAS CSCD 2015年第6期1027-1031,共5页
The organic single-crystal field-effect transistors using anthracene derivative, H-Ant as an active layer with source/drain electrodes decorated by metal charge transfer salt(Cu TCNQ) were fabricated. We demonstrated ... The organic single-crystal field-effect transistors using anthracene derivative, H-Ant as an active layer with source/drain electrodes decorated by metal charge transfer salt(Cu TCNQ) were fabricated. We demonstrated that this bottom-contact structure displayed an obvious improvement in the electrical characteristics relative to their pristine copper and top-contact gold electrode counterparts. This observation could be ascribed to the lower contact resistance resulting from the energetic match between electrodes and semiconductor. 展开更多
关键词 metal charge transfer salt anthracene derivative organic single-crystal field-effect transistors
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