In this paper, different electrical measurement and operation methods of resistive random access memory （RRAM） have been summarized, including voltage sweeping mode （VSM）, current sweeping mode （CSM）, co lstant ...In this paper, different electrical measurement and operation methods of resistive random access memory （RRAM） have been summarized, including voltage sweeping mode （VSM）, current sweeping mode （CSM）, co lstant current stress （CCS）, constant voltage stress （CVS）, rectangular pulse mode （RPM）, and triangle pulse mode （TPM）. Meanwhile, the effects of these meas- urement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summar zeal and analyzed.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61322408,61221004,61422407,61334007,61474136,61274091,61376112,61306117,61106119,and 61106082)National Basic Research Program of China(Grant No.2011CBA00602)National High Technology Research and Development Program of China(Grant Nos.2014AA032900,2013AA030801,2011AA010401 and 2011AA-010402)
文摘In this paper, different electrical measurement and operation methods of resistive random access memory （RRAM） have been summarized, including voltage sweeping mode （VSM）, current sweeping mode （CSM）, co lstant current stress （CCS）, constant voltage stress （CVS）, rectangular pulse mode （RPM）, and triangle pulse mode （TPM）. Meanwhile, the effects of these meas- urement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summar zeal and analyzed.
