This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal...This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal/RF CMOS technology. The design methodologies and approaches for the optimization of the ICs are presented. The first design is optimized for mixed-signal transistor, oscillated at 2.64 GHz with a phase noise of -93.5 dBc/Hz at 500 kHz offset. The second one optimized for RF transistor, using the same architecture, oscillated at 2.61 GHz with a phase noise of -95.8 dBc/Hz at 500 kHz offset. Under a 2 V supply, the power dissipation is 8 mW, and the maximum buffered output power for mixed-signal and RF transistor are -7 dBm and -5.4 dBm, respectively. Both kinds of oscillators make use of on-chip components only, allowing for simple and robust integration.展开更多
A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de...A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de-signed for 5GHz-band wireless applications. Except for bypass and decoupled capacitors,no external component is needed for real application. Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one. And the phase noise at an offset frequency of 1MHz is -112dBc/Hz. The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm. To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz. Meanwhile, the principle and design method of nega-tive resistance oscillator are also discussed.展开更多
An accurate 1.08GHz CMOS LC voltage-controlled oscillator is implemented in a 0.35μm standard 2P4M CMOS process.A new convenient method of calculating oscillator period is presented.With this period calculation tech...An accurate 1.08GHz CMOS LC voltage-controlled oscillator is implemented in a 0.35μm standard 2P4M CMOS process.A new convenient method of calculating oscillator period is presented.With this period calculation technique,the frequency tuning curves agree well with the experiment.At a 3.3V supply,the LC-VCO measures a phase noise of -82.2dBc/Hz at a 10kHz frequency offset while dissipating 3.1mA current.The chip size is 0.86mm×0.82mm.展开更多
A compact Ka-band monolithic microwave integrated circuit(MMIC) voltage controlled oscillator (VCO) with wide tuning range and high output power,which is based on GaAs PHEMT process,is presented.A method is introduced...A compact Ka-band monolithic microwave integrated circuit(MMIC) voltage controlled oscillator (VCO) with wide tuning range and high output power,which is based on GaAs PHEMT process,is presented.A method is introduced to reduce the chip size and to increase the bandwidth of operation.The procedure to design a MMIC VCO is also described here.The measured oscillating frequency of the MMIC VCO is 36±1.2GHz and the output power is 10±1dBm.The fabricated MMIC chip size is 1.3mm×1.0mm.展开更多
Oscillator IC technique is developed by combining injecting synchronization technique with a ring VCO.Using the technique,a novel 2 488GHz of monolithical integrated injected synchronized ring VCO (ISRVCO) is realize...Oscillator IC technique is developed by combining injecting synchronization technique with a ring VCO.Using the technique,a novel 2 488GHz of monolithical integrated injected synchronized ring VCO (ISRVCO) is realized in a standard 0 25μm CMOS process.The ISRVCO is characterized by the following performances: -100dBc /Hz@1MHz at free running frequency,-91 7dBc/Hz@10kHz when injection is locked.With the 3 3V of power supply,the tuning range is 150MHz and the locking range is 100MHz with 50m V p p signal injection.展开更多
A new method of synthesizing 1GHz based on a 0 5μm CMOS D LL is proposed,which can synthesize frequency with simple logic and amplifiers.T he designed frequency synthesizer consists of a DLL (Delay-Locked Loop) and...A new method of synthesizing 1GHz based on a 0 5μm CMOS D LL is proposed,which can synthesize frequency with simple logic and amplifiers.T he designed frequency synthesizer consists of a DLL (Delay-Locked Loop) and a b uilding block of synthesizing logic.The reference frequency input into this freq uency synthesizer is 25MHz and the synthesized frequency is 1GHz.展开更多
A monolithic clock-recovery circuit used in 622 Mb/s optical communication system is designed,which is based on the phase-locked loop theory,and uses bipolar transistor model.It overcomes the shortcoming of clock reco...A monolithic clock-recovery circuit used in 622 Mb/s optical communication system is designed,which is based on the phase-locked loop theory,and uses bipolar transistor model.It overcomes the shortcoming of clock recovery method based on filter,and implements monolithic clock-recovery IC.The designed circuits include phase detector,voltage-controlled oscillator and loop filter.Among them,the voltage-control oscillator is a modified two-stage ring oscillator,which provides quadrature clock signals and presents wide voltage-controlled range and high voltage-controlling sensitivity.展开更多
基金TheNationalHighTechnologyResearchandDevelopmentProgramofChina (863Program ) (No .2 0 0 2AA1Z160 0 )
文摘This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal/RF CMOS technology. The design methodologies and approaches for the optimization of the ICs are presented. The first design is optimized for mixed-signal transistor, oscillated at 2.64 GHz with a phase noise of -93.5 dBc/Hz at 500 kHz offset. The second one optimized for RF transistor, using the same architecture, oscillated at 2.61 GHz with a phase noise of -95.8 dBc/Hz at 500 kHz offset. Under a 2 V supply, the power dissipation is 8 mW, and the maximum buffered output power for mixed-signal and RF transistor are -7 dBm and -5.4 dBm, respectively. Both kinds of oscillators make use of on-chip components only, allowing for simple and robust integration.
文摘A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de-signed for 5GHz-band wireless applications. Except for bypass and decoupled capacitors,no external component is needed for real application. Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one. And the phase noise at an offset frequency of 1MHz is -112dBc/Hz. The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm. To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz. Meanwhile, the principle and design method of nega-tive resistance oscillator are also discussed.
文摘An accurate 1.08GHz CMOS LC voltage-controlled oscillator is implemented in a 0.35μm standard 2P4M CMOS process.A new convenient method of calculating oscillator period is presented.With this period calculation technique,the frequency tuning curves agree well with the experiment.At a 3.3V supply,the LC-VCO measures a phase noise of -82.2dBc/Hz at a 10kHz frequency offset while dissipating 3.1mA current.The chip size is 0.86mm×0.82mm.
文摘A compact Ka-band monolithic microwave integrated circuit(MMIC) voltage controlled oscillator (VCO) with wide tuning range and high output power,which is based on GaAs PHEMT process,is presented.A method is introduced to reduce the chip size and to increase the bandwidth of operation.The procedure to design a MMIC VCO is also described here.The measured oscillating frequency of the MMIC VCO is 36±1.2GHz and the output power is 10±1dBm.The fabricated MMIC chip size is 1.3mm×1.0mm.
文摘Oscillator IC technique is developed by combining injecting synchronization technique with a ring VCO.Using the technique,a novel 2 488GHz of monolithical integrated injected synchronized ring VCO (ISRVCO) is realized in a standard 0 25μm CMOS process.The ISRVCO is characterized by the following performances: -100dBc /Hz@1MHz at free running frequency,-91 7dBc/Hz@10kHz when injection is locked.With the 3 3V of power supply,the tuning range is 150MHz and the locking range is 100MHz with 50m V p p signal injection.
文摘A new method of synthesizing 1GHz based on a 0 5μm CMOS D LL is proposed,which can synthesize frequency with simple logic and amplifiers.T he designed frequency synthesizer consists of a DLL (Delay-Locked Loop) and a b uilding block of synthesizing logic.The reference frequency input into this freq uency synthesizer is 25MHz and the synthesized frequency is 1GHz.
文摘A monolithic clock-recovery circuit used in 622 Mb/s optical communication system is designed,which is based on the phase-locked loop theory,and uses bipolar transistor model.It overcomes the shortcoming of clock recovery method based on filter,and implements monolithic clock-recovery IC.The designed circuits include phase detector,voltage-controlled oscillator and loop filter.Among them,the voltage-control oscillator is a modified two-stage ring oscillator,which provides quadrature clock signals and presents wide voltage-controlled range and high voltage-controlling sensitivity.
