Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressure...Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressures. The result shows that HgSe has a pressure-induced transition sequence from a semimetal to a semiconductor to a metal, similar to that in HgTe. Several discontinuous changes in conductivity are observed at around 1.5, 17, 29 and 49GPa, corresponding to the phase transitions from zinc-blende to cinnabar to rocksalt to orthorhombic to an unknown structure, respectively. In comparison with HgTe, it is speculated that the unknown structure may be a distorted CsCl structure. For the cinnabar-HgSe, the energy gap as a function of pressure is obtained according to the temperature dependence of conductivity. The plot of the temperature dependence of conductivity indicates that the unknown structure of HgSe has an electrical property of a conductor.展开更多
In this work propagation of anti-plane (SH) waves in two piezoelectric ceramic half-spaces with a thin layer of a semiconducting material between the half-spaces is studied, and wave attenuation and dispersion caused ...In this work propagation of anti-plane (SH) waves in two piezoelectric ceramic half-spaces with a thin layer of a semiconducting material between the half-spaces is studied, and wave attenuation and dispersion caused by semiconduction as well as wave amplification by a biasing electric field are examined. Key words Piezoelectricity - Semiconductor - Wave - Attenuation - Dispersion Document code A CLC number TH11展开更多
We propose a scheme for generating squeezed states in solid state circuits which consist a superconducting transmission line resonator （STLR）, a superconducting Cooper-pair box （CPB） and a nanoelectromechanical re...We propose a scheme for generating squeezed states in solid state circuits which consist a superconducting transmission line resonator （STLR）, a superconducting Cooper-pair box （CPB） and a nanoelectromechanical resonator （NMR）. The nonlinear interaction between the STLR and the CPB can be implemented by setting the external biased flux of the CPB at some certain points. The interaction Hamiltonian between the STLR and the NMR is derived by performing Fr ohlich transformation on tile total Hamiltonian of tile combined system. Just by adiabatically keeping the CPB at the ground state, we get the standard parametric down-conversion Hamiltonian, and the squeezed states of the STLR can be easily generated, which is similar to the three-wave mixing in quantum optics.展开更多
On the basis of optically powered sensor principles,this paper introduces a practical scheme of an optically powered force sensor using a piezoelectric crystal worlding in close-loop resonant mode.A 3 mW LD stabilized...On the basis of optically powered sensor principles,this paper introduces a practical scheme of an optically powered force sensor using a piezoelectric crystal worlding in close-loop resonant mode.A 3 mW LD stabilized is used as optical source.The optical powering distance reaches 500 m while the total power consumption of the micro power measuring head is only 0.275 mW.The key technical problems of the sensors are presented as well as experimental results.展开更多
This paper studies the dynamic conducting crack propagation in piezoelectric solids under suddenly in-plane shear loading. Based on the integral transform methods and the Wiener-Hopf technique, the resulting mixed bou...This paper studies the dynamic conducting crack propagation in piezoelectric solids under suddenly in-plane shear loading. Based on the integral transform methods and the Wiener-Hopf technique, the resulting mixed boundary value problem is solved. The analytical solutions of the dynamic stress intensity factor and dynamic electric displacement intensity factor for the Mode II case are derived. Furthermore, the numerical results are presented to illustrate the characteristics of the dynamic crack propagation. It is shown that the universal functions for the dynamic stress and electric displacement intensity factors vanish if the crack propagation speed equals the generalized Rayleigh speed. The results indicate that the defined electro-mechanical coupling coefficient is of great importance to the universal functions and stress intensity factor history.展开更多
We present a new sense amplifier circuit for EEPROM memory. The topology of the sense amplifier uses a voltage sensing method,having low cost and low power consumption as well as high reliability. The sense amplifier ...We present a new sense amplifier circuit for EEPROM memory. The topology of the sense amplifier uses a voltage sensing method,having low cost and low power consumption as well as high reliability. The sense amplifier was implemented in an EEPROM realized with an SMIC 0.35-μm 2P3M CMOS embedded EEPROM process. Under the condition that the power supply is 3.3 V,simulation results showed that the charge time is 35 ns in the proposed sense amplifier,and that the maximum average current consumption during the read period is 40 μA. The novel topology allows the circuit to function with power supplies as low as 1.4 V. The sense amplifier has been implemented in 2-kb EEPROM memory for RFID tag IC applications,and has a silicon area of only 240 μm2.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant Nos 40473034, 40404007, 10574055 and 50532020） and by the State Key Development Program for Basic Research of China （Grant No 2005CB724404）. Acknowledgment The authors would like to thank Keh-Jim Dunn for critically reviewing the manuscript
文摘Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressures. The result shows that HgSe has a pressure-induced transition sequence from a semimetal to a semiconductor to a metal, similar to that in HgTe. Several discontinuous changes in conductivity are observed at around 1.5, 17, 29 and 49GPa, corresponding to the phase transitions from zinc-blende to cinnabar to rocksalt to orthorhombic to an unknown structure, respectively. In comparison with HgTe, it is speculated that the unknown structure may be a distorted CsCl structure. For the cinnabar-HgSe, the energy gap as a function of pressure is obtained according to the temperature dependence of conductivity. The plot of the temperature dependence of conductivity indicates that the unknown structure of HgSe has an electrical property of a conductor.
文摘In this work propagation of anti-plane (SH) waves in two piezoelectric ceramic half-spaces with a thin layer of a semiconducting material between the half-spaces is studied, and wave attenuation and dispersion caused by semiconduction as well as wave amplification by a biasing electric field are examined. Key words Piezoelectricity - Semiconductor - Wave - Attenuation - Dispersion Document code A CLC number TH11
基金The project supported by the National Fundamental Research Program under Grant No.2006CB921106National Natural Science Foundation of China under Grant Nos.10325521 and 60635040
文摘We propose a scheme for generating squeezed states in solid state circuits which consist a superconducting transmission line resonator （STLR）, a superconducting Cooper-pair box （CPB） and a nanoelectromechanical resonator （NMR）. The nonlinear interaction between the STLR and the CPB can be implemented by setting the external biased flux of the CPB at some certain points. The interaction Hamiltonian between the STLR and the NMR is derived by performing Fr ohlich transformation on tile total Hamiltonian of tile combined system. Just by adiabatically keeping the CPB at the ground state, we get the standard parametric down-conversion Hamiltonian, and the squeezed states of the STLR can be easily generated, which is similar to the three-wave mixing in quantum optics.
文摘On the basis of optically powered sensor principles,this paper introduces a practical scheme of an optically powered force sensor using a piezoelectric crystal worlding in close-loop resonant mode.A 3 mW LD stabilized is used as optical source.The optical powering distance reaches 500 m while the total power consumption of the micro power measuring head is only 0.275 mW.The key technical problems of the sensors are presented as well as experimental results.
基金supported by the National Natural Science Foundation of China(Grant Nos.11302260,11090330,11090331,11072003 and 11272222)the National Basic Research Program of China(Grant No.G2010CB832701)
文摘This paper studies the dynamic conducting crack propagation in piezoelectric solids under suddenly in-plane shear loading. Based on the integral transform methods and the Wiener-Hopf technique, the resulting mixed boundary value problem is solved. The analytical solutions of the dynamic stress intensity factor and dynamic electric displacement intensity factor for the Mode II case are derived. Furthermore, the numerical results are presented to illustrate the characteristics of the dynamic crack propagation. It is shown that the universal functions for the dynamic stress and electric displacement intensity factors vanish if the crack propagation speed equals the generalized Rayleigh speed. The results indicate that the defined electro-mechanical coupling coefficient is of great importance to the universal functions and stress intensity factor history.
基金Project (No. 2006AA01Z226) supported by the Hi-Tech Research and Development Program (863) of China
文摘We present a new sense amplifier circuit for EEPROM memory. The topology of the sense amplifier uses a voltage sensing method,having low cost and low power consumption as well as high reliability. The sense amplifier was implemented in an EEPROM realized with an SMIC 0.35-μm 2P3M CMOS embedded EEPROM process. Under the condition that the power supply is 3.3 V,simulation results showed that the charge time is 35 ns in the proposed sense amplifier,and that the maximum average current consumption during the read period is 40 μA. The novel topology allows the circuit to function with power supplies as low as 1.4 V. The sense amplifier has been implemented in 2-kb EEPROM memory for RFID tag IC applications,and has a silicon area of only 240 μm2.
