用丝网印刷法在印有Pt电极的Al_2O_3基片上制备了BaTiO_3(BT)掺杂Bi0.5(Na0.82K0.18)0.5TiO_3(BNKT)厚膜,研究了BT掺杂对BNKT厚膜相结构、微观形貌、介电、压电及铁电性能的影响。研究发现,(1-x)BNKT-x BaTiO_3厚膜体系的准同型相界(MPB...用丝网印刷法在印有Pt电极的Al_2O_3基片上制备了BaTiO_3(BT)掺杂Bi0.5(Na0.82K0.18)0.5TiO_3(BNKT)厚膜,研究了BT掺杂对BNKT厚膜相结构、微观形貌、介电、压电及铁电性能的影响。研究发现,(1-x)BNKT-x BaTiO_3厚膜体系的准同型相界(MPB)位于3mol%<x<7mol%,当BT掺杂量为5mol%时,厚膜的介电、压电及铁电性能达到最佳,介电常数εr=793,压电常数d33=72 p C/N,剩余极化强度Pr=4.35μC/cm2,应变值达到了0.817%,但同时5mol%的BT掺杂使厚膜的介电损耗tanδ由1.1%增加到了6.2%,也使矫顽场EC由35.77 k V/cm增加到53.72 k V/cm。最后将制备的95BNKT-5BT压电厚膜制成扬声器振膜,结合设计的驱动电路,研制出了用于便携式电子设备的无铅压电扬声器。展开更多
This paper reports that dense and crack-free （100） oriented lead zirconate titanate （Pb（ Zr0. 52Ti0. 48 ）O3, PZT） thick film embedded with PZT nanopartieles has been successfully fabricated on Pt/Cr/SiO2/Si subs...This paper reports that dense and crack-free （100） oriented lead zirconate titanate （Pb（ Zr0. 52Ti0. 48 ）O3, PZT） thick film embedded with PZT nanopartieles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive. The thick film possesses single-phase perovskite structure and perfectly （100） oriented. The （100） orientation degree of the PZT films strongly depended on annealing time and for the 4μm-thick PZT film which was annealed at 700℃ for 5 min is the largest. The （100） orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing. The 3μm-thick PZT thick film which was annealed at 700℃ for 5 rain has the strongest （100） orientation degree, which is 82. 3%.展开更多
文摘用丝网印刷法在印有Pt电极的Al_2O_3基片上制备了BaTiO_3(BT)掺杂Bi0.5(Na0.82K0.18)0.5TiO_3(BNKT)厚膜,研究了BT掺杂对BNKT厚膜相结构、微观形貌、介电、压电及铁电性能的影响。研究发现,(1-x)BNKT-x BaTiO_3厚膜体系的准同型相界(MPB)位于3mol%<x<7mol%,当BT掺杂量为5mol%时,厚膜的介电、压电及铁电性能达到最佳,介电常数εr=793,压电常数d33=72 p C/N,剩余极化强度Pr=4.35μC/cm2,应变值达到了0.817%,但同时5mol%的BT掺杂使厚膜的介电损耗tanδ由1.1%增加到了6.2%,也使矫顽场EC由35.77 k V/cm增加到53.72 k V/cm。最后将制备的95BNKT-5BT压电厚膜制成扬声器振膜,结合设计的驱动电路,研制出了用于便携式电子设备的无铅压电扬声器。
基金Sponsored by 863 Scientific Project of China (Grant No.2007AA03Z103)the National Natural Science Foundation of China (Grant No.50742007)the Key Laboratory Foundation of Sonar Technology of China(Grant No. 9140C24KF0901)
文摘This paper reports that dense and crack-free （100） oriented lead zirconate titanate （Pb（ Zr0. 52Ti0. 48 ）O3, PZT） thick film embedded with PZT nanopartieles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive. The thick film possesses single-phase perovskite structure and perfectly （100） oriented. The （100） orientation degree of the PZT films strongly depended on annealing time and for the 4μm-thick PZT film which was annealed at 700℃ for 5 min is the largest. The （100） orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing. The 3μm-thick PZT thick film which was annealed at 700℃ for 5 rain has the strongest （100） orientation degree, which is 82. 3%.
