The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET＇s is studied. We find that the generation current peak decreases as the stress time increases. We ascribe this finding to the dom...The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET＇s is studied. We find that the generation current peak decreases as the stress time increases. We ascribe this finding to the dominating oxide trapped electrons that reduce the effective drain bias, lowering the maximal generation rate. The density of the effective trapped electrons affecting the effective drain bias is calculated with our model.展开更多
Aiming at a kind of middle ear implant（MEI）, the driving voltage of a piezoelectric floating mass actuator is analyzed using a 0. 7Pb （Mg1/3Nb2/3） O3-0. 3PbTiO3 （ PMN- 30% PT）stack as a new type of vibrator. For...Aiming at a kind of middle ear implant（MEI）, the driving voltage of a piezoelectric floating mass actuator is analyzed using a 0. 7Pb （Mg1/3Nb2/3） O3-0. 3PbTiO3 （ PMN- 30% PT）stack as a new type of vibrator. For the purpose of facilitating the analysis, a simplified coupling model of the ossicular chain and the piezoelectric actuator is constructed. First, a finite element model of a human middle ear is constructed by reverse engineering technology, and the validity of this model is confirmed by comparing the simulated motion of the stapes footplate obtained by this model with experimental measurements. Then the displacement impedance of the incus long process is analyzed, and a single mass-spring-damper equivalent model of the ossicular chain attached with the clamp is derived. Finally, a simplified coupling model of the ossicular chain and the piezoelectric actuator is established and used to analyze the driving voltage property of the actuator. The results show that the required driving voltage decreases with the increase in the frequency, and the maximum required driving voltage is 20. 9 V in the voice frequencies. However, in the mid-high frequencies where most sensorineural hearing loss occurs, the maximum required driving voltage is 3.8 V, which meets the low-voltage and low-power requirements of the MEI.展开更多
Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent ...Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent on gate voltage.For the devices with thicker oxides,saturated drain current degradation has a close relationship with the product of gate current and electron fluence.For small dimensional devices,saturated drain current degradation has a close relationship with the electron fluence.This degradation model is valid for p MOSFETs with 0 25μm channel length and different gate oxide thicknesses.展开更多
文摘The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET＇s is studied. We find that the generation current peak decreases as the stress time increases. We ascribe this finding to the dominating oxide trapped electrons that reduce the effective drain bias, lowering the maximal generation rate. The density of the effective trapped electrons affecting the effective drain bias is calculated with our model.
基金The National Natural Science Foundation of China(No10772121)the Med-Science Cross Research Foundation of Shanghai Jiao-tong University (NoYG2007MS14)
文摘Aiming at a kind of middle ear implant（MEI）, the driving voltage of a piezoelectric floating mass actuator is analyzed using a 0. 7Pb （Mg1/3Nb2/3） O3-0. 3PbTiO3 （ PMN- 30% PT）stack as a new type of vibrator. For the purpose of facilitating the analysis, a simplified coupling model of the ossicular chain and the piezoelectric actuator is constructed. First, a finite element model of a human middle ear is constructed by reverse engineering technology, and the validity of this model is confirmed by comparing the simulated motion of the stapes footplate obtained by this model with experimental measurements. Then the displacement impedance of the incus long process is analyzed, and a single mass-spring-damper equivalent model of the ossicular chain attached with the clamp is derived. Finally, a simplified coupling model of the ossicular chain and the piezoelectric actuator is established and used to analyze the driving voltage property of the actuator. The results show that the required driving voltage decreases with the increase in the frequency, and the maximum required driving voltage is 20. 9 V in the voice frequencies. However, in the mid-high frequencies where most sensorineural hearing loss occurs, the maximum required driving voltage is 3.8 V, which meets the low-voltage and low-power requirements of the MEI.
文摘Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent on gate voltage.For the devices with thicker oxides,saturated drain current degradation has a close relationship with the product of gate current and electron fluence.For small dimensional devices,saturated drain current degradation has a close relationship with the electron fluence.This degradation model is valid for p MOSFETs with 0 25μm channel length and different gate oxide thicknesses.
