A fast-locking, low-jitter, phase-locked loop （PLL） with a simple phase-frequency detector is proposed. The phase-frequency detector is composed of only two XOR gates. It simultaneously achieves low jitter and short...A fast-locking, low-jitter, phase-locked loop （PLL） with a simple phase-frequency detector is proposed. The phase-frequency detector is composed of only two XOR gates. It simultaneously achieves low jitter and short locking time. The voltage-controlled oscillator within the PLL consists of four-stage ring oscillators which are coupled to each other and oscillate with the same frequency and a phase shift of 45. The PLL is fabricated in 0. 1Stem CMOS technology. The measured phase noise of the PLL output at 500kHz offset from the 5GHz center frequency is - 102.6dBc/Hz. The circuit exhibits a capture range of 280MHz and a low RMS jitter of 2.06ps. The power dissipation excluding the output buffers is only 21.6roW at a 1.8V supply.展开更多
This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices ...This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, translbrmers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, res- onant mode switching technique to enhance frequency tuning range of voltage controlled oscillator （VCO） and dual mode technique for power amplifier （PA） efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive （T/R） switch in 65nm CMOS process is introduced. The measured error vector magnitude （EVM） of the TX is -21.9 dB while the bit error rate （BER） of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply （except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply） and con- sumes 135 mW in TX mode and 176 mW in RX mode.展开更多
A CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed, and its operation principle, noise and linearity analysis were also presented. Contrary to the conven...A CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed, and its operation principle, noise and linearity analysis were also presented. Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating, the load impedance in this proposed mixer is controlled by the LO signal, and it has only two stacked transistors at each branch which is suitable for low voltage applications. The mixer was designed and fabricated in 0.18 tam CMOS process for 2.4 GHz ISM band applications. With an input of 2.44 GHz RF signal and 2.442 GHz LO signal, the measurement specifications of the proposed mixer are： the conversion gain （Gc） is 5.3 dB, the input-referred third-order intercept point （PIIP3） is 4.6 dBm, the input-referred 1 dB compression point （P1dB） is --7.4 dBm, and the single-sideband noise figure （NFSSB） is 21.7 dB.展开更多
The boost type power supplies are widely used in portable consumer electronics to step up the input voltage to adapt for the high voltage applications like light-emitting diode(LED) driving and liquid crystal display(...The boost type power supplies are widely used in portable consumer electronics to step up the input voltage to adapt for the high voltage applications like light-emitting diode(LED) driving and liquid crystal display(LCD) biasing.In these applications,a regulator with small volume,fewer external components and high efficiency is highly desired.This paper proposes a projected off-and on-time boost control scheme,based on which a monolithic IC with an on-chip VDMOS with 0.2 Ω on-state resistance RDS-ON was implemented in 1.5 μm bipolar-CMOS-DMOS(BCD) process.A 12 V,0.3 A boost regulator prototype is presented as well.With projected off-time and modulated on-time in continuous conduction mode(CCM),a quasi fixed frequency,which is preferred for ripple control,is realized.With projected on-time and modulated off-time in discontinuous conduction mode(DCM),pulse frequency modulation(PFM) operation,which is beneficial to light load efficiency improvement,is achieved without extra control circuitry.Measurement results show that an efficiency of 3% higher than that of a conventional method under 0.5 W output is achieved while a step load transient response comparable to that of current mode control is maintained as well.展开更多
文摘A fast-locking, low-jitter, phase-locked loop （PLL） with a simple phase-frequency detector is proposed. The phase-frequency detector is composed of only two XOR gates. It simultaneously achieves low jitter and short locking time. The voltage-controlled oscillator within the PLL consists of four-stage ring oscillators which are coupled to each other and oscillate with the same frequency and a phase shift of 45. The PLL is fabricated in 0. 1Stem CMOS technology. The measured phase noise of the PLL output at 500kHz offset from the 5GHz center frequency is - 102.6dBc/Hz. The circuit exhibits a capture range of 280MHz and a low RMS jitter of 2.06ps. The power dissipation excluding the output buffers is only 21.6roW at a 1.8V supply.
基金supported in part by the National Natural Science Foundation of China under Grant 61331003 and Grant 61222405
文摘This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, translbrmers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, res- onant mode switching technique to enhance frequency tuning range of voltage controlled oscillator （VCO） and dual mode technique for power amplifier （PA） efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive （T/R） switch in 65nm CMOS process is introduced. The measured error vector magnitude （EVM） of the TX is -21.9 dB while the bit error rate （BER） of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply （except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply） and con- sumes 135 mW in TX mode and 176 mW in RX mode.
基金Project(61166004) supported by the National Natural Science Foundation of ChinaProject(09ZCGHHZ00200) supported by the International Scientific and Technological Cooperation Program of Science and Technology Plan of Tianjin,ChinaProject(UF10028Y)supported by the Doctoral Scientific Research Foundation for Guilin University of Electronic Technology,China
文摘A CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed, and its operation principle, noise and linearity analysis were also presented. Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating, the load impedance in this proposed mixer is controlled by the LO signal, and it has only two stacked transistors at each branch which is suitable for low voltage applications. The mixer was designed and fabricated in 0.18 tam CMOS process for 2.4 GHz ISM band applications. With an input of 2.44 GHz RF signal and 2.442 GHz LO signal, the measurement specifications of the proposed mixer are： the conversion gain （Gc） is 5.3 dB, the input-referred third-order intercept point （PIIP3） is 4.6 dBm, the input-referred 1 dB compression point （P1dB） is --7.4 dBm, and the single-sideband noise figure （NFSSB） is 21.7 dB.
基金Project (No.90707002) supported by the National Natural Science Foundation of China
文摘The boost type power supplies are widely used in portable consumer electronics to step up the input voltage to adapt for the high voltage applications like light-emitting diode(LED) driving and liquid crystal display(LCD) biasing.In these applications,a regulator with small volume,fewer external components and high efficiency is highly desired.This paper proposes a projected off-and on-time boost control scheme,based on which a monolithic IC with an on-chip VDMOS with 0.2 Ω on-state resistance RDS-ON was implemented in 1.5 μm bipolar-CMOS-DMOS(BCD) process.A 12 V,0.3 A boost regulator prototype is presented as well.With projected off-time and modulated on-time in continuous conduction mode(CCM),a quasi fixed frequency,which is preferred for ripple control,is realized.With projected on-time and modulated off-time in discontinuous conduction mode(DCM),pulse frequency modulation(PFM) operation,which is beneficial to light load efficiency improvement,is achieved without extra control circuitry.Measurement results show that an efficiency of 3% higher than that of a conventional method under 0.5 W output is achieved while a step load transient response comparable to that of current mode control is maintained as well.
