压-电-化学耦合增强策略及机理研究进展

压电材料能够收集环境中存在的微小的机械能,具有将机械信号转换为电信号的强大能力.利用压电材料的压电效应与电化学氧化还原效应二者的耦合可以实现压-电-化学耦合.近年来,压-电-化学耦合在收集清洁能源和处理废水保护环境方面受到国内外研究人员的广泛关注.本文综述了增强压-电-化学耦合的策略,从构建异质结、负载贵金属、构筑相界、混合碳或石墨烯和调控缺陷方面出发进行了总结梳理.从电子的运输和转移、材料相变和氧空位的角度解释不同策略中的物理机理,并对研究前景进行了展望.

AgNbO_3压电纳米材料压-电-化学耦合研究

采用水热法合成了AgNb0_3压电纳米材料,表征了其压-电-化学耦合用于机械催化的物理机理.该耦合是压电效应和电化学氧化还原效应的乘积效应.经历60 min的机械振动后,AgNb0_3纳米材料机械催化振动降解罗丹明B(～5mg/L)的降解率达70%以上.压-电-化学耦合效应的中间产物——强氧化的羟基自由基也被检测到,这表明压-电-化学耦合效应在实现机械催化过程中的关键作用.经过5次回收再利用,AgNb0_3纳米材料的机械催化活性无明显降低.AgNb0_3压电纳米材料具有高的压-电-化学耦合、高的机械催化降解率、可多次重复使用等优点,在振动降解有机染料方面具有重要的应用前景.

分压-自偏压共源放大电路的Multisim仿真研究

针对场效应管电路分析中不同元件性能参数不同而导致一些理论计算复杂、繁琐,并且难于理解的情况,通过对N沟道增强型MOS场效应管组成的分压-自偏压共源放大电路的理论研究,利用Multisim仿真软件对电路实际工作情况进行模拟,根据二者结果的对比,研究并提出了分压-自偏压共源放大电路的Multisim电路仿真研究的方法。

Interface engineering via temperature-dependent self-transformation on SnS2/SnS for enhanced piezocatalysis

Heterojunction has been widely used in vibration-driven piezocatalysis for enhanced charges separation,while the weak interfaces seriously affect the efficiency during mechanical deformations due to prepared by traditional step-by-step methods.Herein,the intimate contact interfaces with shared S atoms are ingeniously constructed in SnS_(2)/SnS anchored on porous carbon by effective interface engineering,which is in-situ derived from temperature-dependent self-transformation of SnS_(2).Benefiting from intimate contact interfaces,the piezoelectricity is remarkably improved due to the larger interfacial dipole moment caused by uneven distribution of charges.Importantly,vibration-induced piezoelectric polarization field strengthens the interfacial electric field to further promote the separation and migration of charges.The dynamic charges then transfer in porous carbon with high conductivity and adsorption for significantly improved piezocatalytic activity.The degradation efficiency of bisphenol A(BPA)is 6.3 times higher than SnS_(2) and H2 evolution rate is increased by 3.8 times.Compared with SnS_(2)/SnS prepared by two-step solvothermal method,the degradation efficiency of BPA and H2 evolution activity are increased by 3 and 2 times,respectively.It provides a theoretical guidance for developing various multiphase structural piezocatalyst with strong interface interactions to improve the piezocatalytic efficiency.

Recent Advances on Ruthenium-based Electrocatalysts for Lithium-oxygen Batteries

Rechargeable lithium-oxygen(Li-O_(2))batteries have attracted wide attention due to their high energy density.However,the sluggish cathode kinetics results in high overvoltage and poor cycling performance.Ruthenium(Ru)-based electrocatalysts have been demonstrated to be promising cathode catalysts to promote oxygen evolution reaction(OER).It facilitates decomposition of lithium peroxide(Li_(2)O_(2))by adjusting Li_(2)O_(2) morphologies,which is due to the strong interaction between Ru-based catalyst and superoxide anion(O_(2))intermediate.In this review,the design strategies of Ru-based electrocatalysts are introduced to enhance their OER catalytic kinetics in Li-O_(2) batteries.Different configurations of Ru-based catalysts,including metal particles(Ru metal and alloys),single-atom catalysts,and Ru-loaded compounds with various substrates(carbon materials,metal oxides/sulfides),have been summarized to regulate the electronic structure and the matrix architecture of the Ru-based electrocatalysts.The structure-property relationship of Ru-based catalysts is discussed for a better understanding of the Li_(2)O_(2) decomposition mechanism at the cathode interface.Finally,the challenges of Ru-based electrocatalysts are proposed for the future development of Li-O_(2) batteries.

Influences of electric-hydraulic chattering on backward extrusion process of 6061 aluminum alloy

The possibility of the electric-hydraulic chattering technology and its application in the cold extrusion were presented.The conventional and electric-hydraulic chattering assisted backward extrusion processes were performed on 6061 aluminum alloy billets at room temperature.The experimental results showed that 5.65% reduction in the extrusion load was attained if the die and ejector were vibrated at a frequency of 100 Hz and amplitude of 0.013 mm in the longitudinal direction.The friction coefficient at the billet and tool system interface determined from the finite element analysis（FEA） decreased from 0.2 without chattering to 0.1 with application of electric-hydraulic chattering.The higher values of instantaneous velocity and direction change of material flow were achieved during the chattering assisted backward extrusion process.The strain distribution of the chattering assisted backward extrusion billet revealed lower maximum strain and smoother strain distribution in comparison with that produced by the conventional extrusion method.

CONSTITUTIVE EQUATIONS OF METAL-CORE PIEZOELECTRIC FIBERS

Metal-core piezoelectric fibers （MPFs） are one of the new type piezoelectric devices. To investigate the piezoelectricity and the mechanical properties of the piezoelectric fibers, the constitutive equations are established. It can describe the response of piezoelectric fibers subject to an axial force and an external voltage. A cantilever bar subject to a tip axial force and an external voltage on the electrodes is considered. The internal energy density in thermodynamic equilibrium is obtained. The total internal energy is calculated by integrating over the entire volume of the bar. The generalized displacement of the tip axial force is the tip elongation δ, and the generalized displacement of the voltage is the electrical charge Q on the electrodes. In the established constitutive equations, the excitation （input） parameters are the axial force and the external voltage, the response （output） parameters are the tip elongation and the electric charge. And the response parameters are related to the excitation parameters by a 2× 2 piezoelectric matrix. Finally, two experiments using MPF as a sensor or an actuator are performed to verify the constitutive equations. And experimental results are compared with analytical ones.

A Novel Offset-Cancellation Technique for Low Voltage CMOS Differential Amplifiers

Based on a physical understanding of nonlinearity and mismatch, a novel offset-cancellation technique for low voltage CMOS differential amplifiers is proposed. The technique transfers the offset voltage from the output to other parts of the differential amplifier and can greatly reduce the input-referred offset voltage without extra power consumption. A 1.8V CMOS differential amplifier is implemented in 0.18μm CMOS process using the proposed technique. The simulation results show that the technique could reduce the input-referred offset voltage of the amplifier by 40% with a 20% load transistor mismatch and a 10% input differential transistor mismatch. Moreover, the proposed technique consumes the least power and achieves the highest integration among various offset-cancellation techniques.

Micro-displacement amplifying mechanism driven by piezoelectric actuator

Piezoelectric actuator has high stiffness, high frequency and infinite control precision, but a short output displacement which is often 1/1 000 of its length. In order to meet the requirements that tools feeding should be long-travel, high-frequency and high-precision in non-circular precision turning, a new one-freedom flexure hinge structure is put forward to amplify the output displacement of piezoelectric actuator. Theoretical analysis is done on the static and dynamic characteristics of the structure, differential equations are presented, and it is also verified by the finite element method. It's proved by experiments that the output displacement of the structure is 293 μm and its resonant frequency is 312 Hz.

Effects of high-energy ball milling oxide-doped and varistor ceramic powder on ZnO varistor

ZnO varistor ceramics doped with Bi2O3, Sb2O3, CO2O3, Cr2O3, and MnO2 were prepared separately by two high-energy ball milling processes： oxide-doped and varistor ceramic powder. A comparison in the electrical and microstructural properties of the samples obtained by both methods was made. The best results on these characteristics were achieved through the high-energy ball milling varistor ceramic powder route, obtaining a nonlinear coefficient of 57 and a breakdown field of 617 V/mm at a sintering temperature of 1000 ℃ for 3 h. The samples synthesized by this technique show not only high density value, 95% of the theoretical density, but also a homogeneous microstructure, which compete with those obtained by the high-energy ball milling oxide-doped powder route. With the advantage that the high-energy ball milling varistor ceramic powder route can refine grain, increase the driving force of sintering, accelerate the sintering process, and reduce the sintering temperature.

Influence of electric parameters on MAO of AZ91D magnesium alloy using alternative square-wave power source

Micro-arc oxidation （MAO） process was carried out on AZ91D alloy in alkaline borate solution using an alternative square-wave power source with different parameters. The effects of voltage, frequency and duty cycle on the coatings were investigated by orthogonal experiment. It is found that the thickness of coatings increases with the increase of voltage and duty cycle, but decreases with the increase of frequency. The structure and morphology of the coatings also depend on voltage, frequency and duty cycle. The coatings become more porous and crack with increasing voltage and duty cycle. The coating is thin and transparent when the voltage is lower than 120 V. The corrosion resistances of different coatings were evaluated by polarization curves and electrochemical impedance spectroscopy （EIS） in 3.5% NaCl （mass fraction） solution. When the optimized values of voltage, frequency and duty cycle are 140 V, 2 000 Hz and 0.4, respectively, the anodic coating shows the best corrosion resistance.

Chip Design of Li-Ion Battery Charger Operating in Constant-Current/Constant-Voltage Modes

A design for a Li-ion battery charger IC that can operate in a constant current-constant voltage （CC- CV） charge mode is proposed. In the CC-CV charge mode,the charger IC provides a constant charging current at the beginning, and then the charging current begins to decrease before the battery voltage reaches its final value. After the battery voltage reaches its final value and remains constant,the charging current is further reduced. This approach prevents charging the battery with full current near its saturated voltage,which can cause heating. The novel design of the core of the charger IC realizes the proposed CC-CV charge mode. The chip was implemented in a CSMC 0.6μm CMOS mixed signal process. The experimental results verify the realization of the proposed CC- CV charge mode. The voltage of the battery after charging is 4. 1833V.

Residual elastic stress strain field and geometrically necessary dislocation density distribution around nano-indentation in TA15 titanium alloy

Nanoindentation and high resolution electron backscatter diffraction（EBSD） were combined to examine the elastic modulus and hardness of α and β phases,anisotropy in residual elastic stress strain fields and distributions of geometrically necessary dislocation（GND） density around the indentations within TA15 titanium alloy.The nano-indention tests were conducted on α and β phases,respectively.The residual stress strain fields surrounding the indentation were calculated through crosscorrelation method from recorded patterns.The GND density distribution around the indentation was calculated based on the strain gradient theories to reveal the micro-mechanism of plastic deformation.The results indicate that the elastic modulus and hardness for α p hase are 129.05 GPas and 6.44 GPa,while for β phase,their values are 109.80 GPa and 4.29 GPa,respectively.The residual Mises stress distribution around the indentation is relatively heterogeneous and significantly influenced by neighboring soft β phase.The region with low residual stress around the indentation is accompanied with markedly high a type and prismatic-GND density.

A NEW SOFT-SWITCHING PUSH-PULL THREE-LEVEL CONVERTER

The application areas of conventional push pull converters are limited because of high voltage stress of switches (twice of input voltage). This paper presents a novel zero voltage and zero current switching (ZCS) PWM push pull three level converter in which the voltage stress of switches is input voltage. With phase shifted modulation strategy, the leading switches can only realize zero voltage switching (ZVS), and the lagging switches can realize ZCS when block capacitor and block diodes are added. Using the strategy, the converter overcomes the drawbacks presented by the conventional push pull converter, such as magnetic aberration, large switch loss, and voltage spike on switches, so it can get higher efficiency, and a wider application area. The operating principle of the new converter is analyzed and verified on a 600 W, 50 kHz experimental prototype. Several zero voltage and zero current switching PWM push pull three level converters are proposed.

A Near-1V 10ppm/℃ CMOS Bandgap Reference with Curvature Compensation

A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.

On-State Breakdown Model for High Voltage RESURF LDMOS

An analytical breakdown model under on state condition for high voltage RESURF LDMOS is proposed.The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.As a result,electric field profile of n drift in LDMOS at on state is obtained.Based on this model,the electric SOA of LDMOS can be determined.The analytical results partially fit to our numerical (by MEDICI) and experiment results.This model is an aid to understand the device physics during on state accurately and it also directs high voltage LDMOS design.

A Novel High-Voltage Detector Integrated into SPIC by Using FFLR

A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system.The field limiting ring as a voltage divider,is used to optimize the surface field.The voltage of main junction increases from 0 to a high value,while the utmost ring is designed to vary within a small range,which can be handled by using low voltage logic circuits.An example of 400V rings system is analyzed and simulated for this structure.The results prove that the high voltage detector can detect high voltage in SPIC.The structure can be integrated into SPIC.Besides,it is compatible with CMOS or BCD(Bipolar CMOS Dmos) technology,without any additional processes required.

Influence of nano-CeO_2 on coating structure and properties of electrodeposited Al/α-PbO_2/β-PbO_2

Al/α-PbO2/β-PbO2 composite electrodes doped with rare earth oxide （CeO2） were prepared by anodic oxidation method investigate the influence of nano-CeO2 dopants on the properties of Al/α-PbO2/β-PbO2-CeO2 electrodes and the impact of α-PbO2 as the intermediate layer. The results show that using α-PbO2 as the intermediate layer will benefit the crystallization of β-PbO2 and β-PbO2 is more suitable as the surface layer than α-PbO2. CeO2 dopants change the crystallite size and crystal structure, enhance the catalytic activity, and even change the deposition mechanism of PbO2. The doping of CeO2 in the PbO2 electrodes can enhance the electro-catalytic activity, which is helpful for oxygen evolution, and therefore reduce the cell voltage.

Realization of Fully Differential Fourth-Order Bessel Filter with Accurate Group Delay

A fully differential R-MOSFET-C fourth-order Bessel active lowpass filter employing fully differential operational amplifier,passive resistors,and current-steering MOS transistors as a variable resistor is proposed.This proposed implementation relies on the tunability of current-steering MOS transistors operating in the triode region counteracting the concert deviation of resistor in the integrated circuit manufacturing technology in orde r that the group delay of Bessel active filter could be designed accurately.The amplifier is not only with voltage common-mode negative feedback,but also with current common-mode negative feedback,which will benefit for the stability of its D C operating point.0.75μs group delay fourth-order Bessel lowpass filter,whic h is synthesized according to passive doubly terminated RLC prototype lowpass filter,demonstrates better than -65dB THD using 100kHz,2.5V pp signal in Taiwan UMC 2P2M(2-poly,2-metal)5.0V,0.5μm CMOS technology.

Two-Stage Driving Circuit for One-Chip TFT-LCD Driver IC

A two-stage driving circuit of a one-chip TFT-LCD driver IC for portable electronic devices is proposed. The driving buffers of the new circuit are built in the γ-correction circuit rather than in the source driver. The power consumption,die area, and driving capability of the driving circuit are discussed in detail. For a two-stage driving circuit with 13 driving buffers, the settling time of the driving voltage within 0.2% error is about 19.2μs when 396 pixel-loads are driven by the same grayscale voltage. The quiescent current of the whole driving circuit is 518μ~A,and the power consumption can be reduced by 77%. The proposed driving circuit is successfully applied in a 132RGB × 176-dot,260k color one-chip driver IC developed by us for the TFT-LCD of mobile phone, and it can also be used in other portable electronic devices, such as PDAs and digital cameras.