TN252 2004064287 在硅片上沉积厚二氧化硅的火焰水解法研究=Research on the deposition of thick silica on silicon substrate by flame hydrolysis deposition[刊,中]/郜定山（中科院半导体所光电子研究发展中心.北京（100083））,...TN252 2004064287 在硅片上沉积厚二氧化硅的火焰水解法研究=Research on the deposition of thick silica on silicon substrate by flame hydrolysis deposition[刊,中]/郜定山（中科院半导体所光电子研究发展中心.北京（100083））,李建光…∥光学学报.—2004,24（9）.—1279-1282 用火焰水解和高温烧结的方法在单晶硅基片上制备了厚SiO<sub>2</sub>和B<sub>2</sub>O<sub>3</sub>-P<sub>2</sub>O<sub>5</sub>-SiO<sub>2</sub>光波导包层材料。并用扫描电镜（SEM）和X射线粉末衍射（XRD）方法对其微观形貌和物相结构进行了观察和检测。重点对硅基片上沉积厚SiO<sub>2</sub>时的龟裂和析晶问题进行了深入研究。从扫描电镜照片可以看出,火焰水解法形成的SiO<sub>2</sub>粉末呈多孔的蜂窝状结构。这种粉末具有很高的比表面积,因而很容易烧结成玻璃。X射线衍射图谱表明。展开更多
In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliabi...In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliability in high humidity environment. Samples with different thicknesses of Si 3 N 4 and SiO 2 were prepared on Pyrex 7740 glass substrates and characterized by isothermal and high humidity charge decay. The results of experiment approved that the PECVD SiO 2 /Si 3 N 4 double layers electrets on glass substrate has as good chargeability and charge stability in high temperature and high humidity environment as thermal oxidation or APCVD/LPCVD ones on silicon substrates. The experiment results indicated that a Si 3 N 4 layer no less than 50 nm is necessary for good charge stability in high temperature and a Si 3 N 4 layer thicker than 500 nm decreases the chargeability. Even a 2 nm Si 3 N 4 layer is enough to significantly improve the charge stability in high humidity environment. Thick SiO 2 layer can increase the surface potential of electrets under the same charging condition and its charge stability in high temperature. However, the electrets with high surface potential also exhibit poor uniformity of charge stability in high humidity environment.展开更多
文摘TN252 2004064287 在硅片上沉积厚二氧化硅的火焰水解法研究=Research on the deposition of thick silica on silicon substrate by flame hydrolysis deposition[刊,中]/郜定山（中科院半导体所光电子研究发展中心.北京（100083））,李建光…∥光学学报.—2004,24（9）.—1279-1282 用火焰水解和高温烧结的方法在单晶硅基片上制备了厚SiO<sub>2</sub>和B<sub>2</sub>O<sub>3</sub>-P<sub>2</sub>O<sub>5</sub>-SiO<sub>2</sub>光波导包层材料。并用扫描电镜（SEM）和X射线粉末衍射（XRD）方法对其微观形貌和物相结构进行了观察和检测。重点对硅基片上沉积厚SiO<sub>2</sub>时的龟裂和析晶问题进行了深入研究。从扫描电镜照片可以看出,火焰水解法形成的SiO<sub>2</sub>粉末呈多孔的蜂窝状结构。这种粉末具有很高的比表面积,因而很容易烧结成玻璃。X射线衍射图谱表明。
基金supported by the National Basic Research Program of China ("973" Program) (Grant No. 2009CB320300)
文摘In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliability in high humidity environment. Samples with different thicknesses of Si 3 N 4 and SiO 2 were prepared on Pyrex 7740 glass substrates and characterized by isothermal and high humidity charge decay. The results of experiment approved that the PECVD SiO 2 /Si 3 N 4 double layers electrets on glass substrate has as good chargeability and charge stability in high temperature and high humidity environment as thermal oxidation or APCVD/LPCVD ones on silicon substrates. The experiment results indicated that a Si 3 N 4 layer no less than 50 nm is necessary for good charge stability in high temperature and a Si 3 N 4 layer thicker than 500 nm decreases the chargeability. Even a 2 nm Si 3 N 4 layer is enough to significantly improve the charge stability in high humidity environment. Thick SiO 2 layer can increase the surface potential of electrets under the same charging condition and its charge stability in high temperature. However, the electrets with high surface potential also exhibit poor uniformity of charge stability in high humidity environment.
