As a kind of specially modified chemical vapor deposition (CVD), atom ic layer deposition (ALD) has long been used to fabricate thin films. The self-limiting reaction of ALD endows the films with excellent uniformity ...As a kind of specially modified chemical vapor deposition (CVD), atom ic layer deposition (ALD) has long been used to fabricate thin films. The self-limiting reaction of ALD endows the films with excellent uniformity and precise controllability. The thickness o f the tilms obtained by ALD can be controlled in an atom ic scale (0.1 nm) on a large-area substrate even with complex structures. Therefore, it has recently been employed to produce the two-dimensional (2D) materials like MoS2. In this mini-review, the research progress in ALD MoS2 is firstly summarized. Then the influences of precursors, substrates, temperature, and post-annealing treatm ent on the quality of ALD-MoS2 are presented. Moreover, the applications of the obtained MoS2 as an electrochemical catalysator are also described. Besides the perspective on the research of ALD of MoS2, the remaining challenges and promising potentials are also pointed out.展开更多
基金financially supported by the National Natural Science Foundation of China (51822501)the Natural Science Funds for Distinguished Young Scholar of Jiangsu Province (BK20170023)+12 种基金the Fundamental Research Funds for the Central Universities (3202006301 and 3202006403)Qing Lan Project of Jiangsu Provincethe International Foundation for Science, Stockholm, Swedenthe Organization for the Prohibition of Chemical Weapons, the Hague, Netherlands, through a grant to Lei Liu (F/4736-2)the grants from Top 6 High-Level Talents Program of Jiangsu Province (2017-GDZB-006, Class A)the Natural Science Foundation of Jiangsu Province (BK20181274)the Scientific Research Foundation of Graduate School of Southeast University (YBPY1703)the Open Research Fund of Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University (KF201806)the Scientific Research Fund of Nanjing Institute of Technology (YKJ201859)the Tribo1ogy Science Fund of State Key Laboratory of Tribology (SKLTKF15A11)Open Research Fund of State Key Laboratory of High Performance Complex Manufacturing, Central South University (Kfkt2016-11)Open Research Fund of State Key Laboratory of Fire Science (HZ2017-KF05)Open Research Fund of State Key Laboratory of Solid Lubrication (LSL-1607)
文摘As a kind of specially modified chemical vapor deposition (CVD), atom ic layer deposition (ALD) has long been used to fabricate thin films. The self-limiting reaction of ALD endows the films with excellent uniformity and precise controllability. The thickness o f the tilms obtained by ALD can be controlled in an atom ic scale (0.1 nm) on a large-area substrate even with complex structures. Therefore, it has recently been employed to produce the two-dimensional (2D) materials like MoS2. In this mini-review, the research progress in ALD MoS2 is firstly summarized. Then the influences of precursors, substrates, temperature, and post-annealing treatm ent on the quality of ALD-MoS2 are presented. Moreover, the applications of the obtained MoS2 as an electrochemical catalysator are also described. Besides the perspective on the research of ALD of MoS2, the remaining challenges and promising potentials are also pointed out.
