We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca_(2)CuO_(2)Cl_(2)parent Mott insulator of cuprates.We find that when the two dopants approach...We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca_(2)CuO_(2)Cl_(2)parent Mott insulator of cuprates.We find that when the two dopants approach each other,the transfer of spectral weight from high energy Hubbard band to low energy ingap state creates a broad peak and nearly V-shaped gap around the Fermi level.The peak position shows a sudden drop at distance around 4 a_(0)and then remains almost constant.The in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the underlying Cu lattice.These results shed important new lights on the evolution of low energy electronic states when a few holes are doped into parent cuprates.展开更多
基金the National Program on Key Basic Research Project of China(973 Program)(2017YFA0302900)the Basic Science Center Project of the National Natural Science Foundation of China(51788104)supported in part by the Beijing Advanced Innovation Center for Future Chip(ICFC)。
文摘We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca_(2)CuO_(2)Cl_(2)parent Mott insulator of cuprates.We find that when the two dopants approach each other,the transfer of spectral weight from high energy Hubbard band to low energy ingap state creates a broad peak and nearly V-shaped gap around the Fermi level.The peak position shows a sudden drop at distance around 4 a_(0)and then remains almost constant.The in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the underlying Cu lattice.These results shed important new lights on the evolution of low energy electronic states when a few holes are doped into parent cuprates.
