We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide （WS2） films. The WS2 films were deposited on a Si （100） substrate and a zinc sulfide （ZnS） film coated the Si （100） subs...We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide （WS2） films. The WS2 films were deposited on a Si （100） substrate and a zinc sulfide （ZnS） film coated the Si （100） substrate using tungsten hexacarbonyl and hydrogen sulfide as precursors. The ZnS film served as an intermediate layer to facilitate the nucleation and growth of the WS2 films. The thickness of the WS2 films was measured via scanning electron microscope, the microstructure was probed with an X-ray diffractometer and a transmission electron microscope. The friction coefficient was measured with a ball-on-disk tester under dry nitrogen. The results reveal that the WS2 films deposited on both substrates are N175 nm and have （002） and （101） crystal orientations. The WS2 film deposited on the ZnS coated Si substrate exhibits a stronger （002） orientation and a denser crystal structure than that deposited on the Si substrate. The WS2 films on both substrates have low friction coefficients. How- ever, due to the stronger （002） orientation and denser crystal structure, the friction coefficient of the WS2 film deposited on ZnS coated Si substrate is smaller with longer wear life.展开更多
In this work, the influence of crystal structure on the friction coefficient of zinc oxide （ZnO） films was studied. The ZnO films were deposited on a Si （100） substrate using an atomic layer deposition process, an...In this work, the influence of crystal structure on the friction coefficient of zinc oxide （ZnO） films was studied. The ZnO films were deposited on a Si （100） substrate using an atomic layer deposition process, and the crystal structure of the ZnO films was changed by adjusting the substrate temperature. The surface morphology and the crystal structure of the ZnO films were meas- ured by an atomic force microscope and an X-ray diffractometer, respectively, and the friction coefficient of the ZnO fi）ms was measured by a ball-on-disk dry sliding tester. The results show that the ZnO films deposited at substrate temperatures below 200~C are dominated by （100）, （002） and （101）-orientated crystals, while the ZnO films deposited at substrate temperatures above 250~C are dominated by （002）-orientated crystals, and that the crystal structure influences the friction coefficient of ZnO films greatly. The ZnO films with （002）-orientated crystals possess a larger friction coefficient than those with other orientated crystals. In order to verify this conclusion, we measured the friction behavior of the ZnO single crystals with different orienta- tions. The results are consistent well with our conclusion.展开更多
Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer...Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer,strong magnetic responses were observed in the magnetic force microscopy (MFM) measurement,which revealed that the films were independent of dopant particles and clusters. Numerical simulation on the data of atomic force microscope (AFM) and MFM measurements covering the whole microstructure validated the formation of long range magnetic order. This result excluded a variety of controversial origins of room-temperature ferromagnetism in the GaN: Mn and gave a strong evidence of our GaN: Mn as the intrinsic diluted magnetic semiconductor (DMS). The forwarded method for accurate characterization of long range magnetic order could be applied to a wide range of DMS and diluted magnetic oxide (DMO) systems.展开更多
Two-dimensional(2 D) transition metal phosphides(TMPs) are predicted with many novel properties and various applications. As a member of TMPs family, molybdenum phosphide(MoP) exhibits many exotic physicochemical prop...Two-dimensional(2 D) transition metal phosphides(TMPs) are predicted with many novel properties and various applications. As a member of TMPs family, molybdenum phosphide(MoP) exhibits many exotic physicochemical properties. However, the synthesis of high-quality2 D MoP single crystals is not reported due to the lack of reliable fabrication method, which limits the exploration of 2 D MoP. Here, we report the growth of high-quality ultrathin MoP single crystals with thickness down to 10 nm on liquid metals via chemical vapor deposition(CVD). The smooth surface of liquid Ga is regarded as a suitable growth substrate for producing 2 D MoP single crystals. The Mo source diffuses toward the Ga surface due to the high surface energy to react with phosphorus source, thus to fabricate ultrathin MoP single crystals. Then, we study the second harmonic generation(SHG) of 2 D MoP for the first time due to its intrinsic noncentrosymmetric structure. Our study provides an new approach to synthesize and explore other 2 D TMPs for future applications.展开更多
基金supported by the National Natural Science Fundation of China(Grant Nos.50825501,51321092&51335005)the National Science and Technology Major Project(Grant No.2008ZX02104-001)
文摘We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide （WS2） films. The WS2 films were deposited on a Si （100） substrate and a zinc sulfide （ZnS） film coated the Si （100） substrate using tungsten hexacarbonyl and hydrogen sulfide as precursors. The ZnS film served as an intermediate layer to facilitate the nucleation and growth of the WS2 films. The thickness of the WS2 films was measured via scanning electron microscope, the microstructure was probed with an X-ray diffractometer and a transmission electron microscope. The friction coefficient was measured with a ball-on-disk tester under dry nitrogen. The results reveal that the WS2 films deposited on both substrates are N175 nm and have （002） and （101） crystal orientations. The WS2 film deposited on the ZnS coated Si substrate exhibits a stronger （002） orientation and a denser crystal structure than that deposited on the Si substrate. The WS2 films on both substrates have low friction coefficients. How- ever, due to the stronger （002） orientation and denser crystal structure, the friction coefficient of the WS2 film deposited on ZnS coated Si substrate is smaller with longer wear life.
基金supported by the National Science Fund for Distinguished Young Scholars(Grant No.50825501)the Science Fund for Creative Research Groups(Grant No.51321092)+1 种基金the National Natural Science Foundation of China(Grant Nos.51335005 and 91323302)the National Science and Technology Major Project(Grant No.2008ZX02104-001)
文摘In this work, the influence of crystal structure on the friction coefficient of zinc oxide （ZnO） films was studied. The ZnO films were deposited on a Si （100） substrate using an atomic layer deposition process, and the crystal structure of the ZnO films was changed by adjusting the substrate temperature. The surface morphology and the crystal structure of the ZnO films were meas- ured by an atomic force microscope and an X-ray diffractometer, respectively, and the friction coefficient of the ZnO fi）ms was measured by a ball-on-disk dry sliding tester. The results show that the ZnO films deposited at substrate temperatures below 200~C are dominated by （100）, （002） and （101）-orientated crystals, while the ZnO films deposited at substrate temperatures above 250~C are dominated by （002）-orientated crystals, and that the crystal structure influences the friction coefficient of ZnO films greatly. The ZnO films with （002）-orientated crystals possess a larger friction coefficient than those with other orientated crystals. In order to verify this conclusion, we measured the friction behavior of the ZnO single crystals with different orienta- tions. The results are consistent well with our conclusion.
基金supported by the National Natural Science Foundation of China (Grant Nos.60577030,60776041,60876035)the National Key Basic Research Special Foundation of China (Grant Nos.TG2007CB307004,2006CB921607)
文摘Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer,strong magnetic responses were observed in the magnetic force microscopy (MFM) measurement,which revealed that the films were independent of dopant particles and clusters. Numerical simulation on the data of atomic force microscope (AFM) and MFM measurements covering the whole microstructure validated the formation of long range magnetic order. This result excluded a variety of controversial origins of room-temperature ferromagnetism in the GaN: Mn and gave a strong evidence of our GaN: Mn as the intrinsic diluted magnetic semiconductor (DMS). The forwarded method for accurate characterization of long range magnetic order could be applied to a wide range of DMS and diluted magnetic oxide (DMO) systems.
基金supported by the National Natural Science Foundation of China (21673161 and 21905210)the Sino-German Center for Research Promotion (GZ 1400)。
文摘Two-dimensional(2 D) transition metal phosphides(TMPs) are predicted with many novel properties and various applications. As a member of TMPs family, molybdenum phosphide(MoP) exhibits many exotic physicochemical properties. However, the synthesis of high-quality2 D MoP single crystals is not reported due to the lack of reliable fabrication method, which limits the exploration of 2 D MoP. Here, we report the growth of high-quality ultrathin MoP single crystals with thickness down to 10 nm on liquid metals via chemical vapor deposition(CVD). The smooth surface of liquid Ga is regarded as a suitable growth substrate for producing 2 D MoP single crystals. The Mo source diffuses toward the Ga surface due to the high surface energy to react with phosphorus source, thus to fabricate ultrathin MoP single crystals. Then, we study the second harmonic generation(SHG) of 2 D MoP for the first time due to its intrinsic noncentrosymmetric structure. Our study provides an new approach to synthesize and explore other 2 D TMPs for future applications.
