The progressive stacking of chalcogenide single layers gives rise to two- dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet t...The progressive stacking of chalcogenide single layers gives rise to two- dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet the properties of some members of the chalcogenide family remain unexplored. Indium selenide （InSe） is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. Here, we reveal the lattice dynamics, optical and electronic properties of atomically thin InSe flakes prepared by micromechanical cleavage. Raman active modes stiffen or soften in the flakes depending on which electronic bonds are excited. A progressive blue-shift of the photoluminescence peaks is observed for decreasing flake thickness （as large as 0.2 eV for three single layers）. First-principles calculations predict an even larger increase in the bandgap, 0.40 eV, for three single layers, and as much as 1.1 eV for a single layer. These results are promising from the point of view of the versatility of this material for optoelectronic applications at the nanometer scale and compatible with Si and III-V technologies.展开更多
Two-dimensional(2 D) transition metal phosphides(TMPs) are predicted with many novel properties and various applications. As a member of TMPs family, molybdenum phosphide(MoP) exhibits many exotic physicochemical prop...Two-dimensional(2 D) transition metal phosphides(TMPs) are predicted with many novel properties and various applications. As a member of TMPs family, molybdenum phosphide(MoP) exhibits many exotic physicochemical properties. However, the synthesis of high-quality2 D MoP single crystals is not reported due to the lack of reliable fabrication method, which limits the exploration of 2 D MoP. Here, we report the growth of high-quality ultrathin MoP single crystals with thickness down to 10 nm on liquid metals via chemical vapor deposition(CVD). The smooth surface of liquid Ga is regarded as a suitable growth substrate for producing 2 D MoP single crystals. The Mo source diffuses toward the Ga surface due to the high surface energy to react with phosphorus source, thus to fabricate ultrathin MoP single crystals. Then, we study the second harmonic generation(SHG) of 2 D MoP for the first time due to its intrinsic noncentrosymmetric structure. Our study provides an new approach to synthesize and explore other 2 D TMPs for future applications.展开更多
文摘The progressive stacking of chalcogenide single layers gives rise to two- dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet the properties of some members of the chalcogenide family remain unexplored. Indium selenide （InSe） is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. Here, we reveal the lattice dynamics, optical and electronic properties of atomically thin InSe flakes prepared by micromechanical cleavage. Raman active modes stiffen or soften in the flakes depending on which electronic bonds are excited. A progressive blue-shift of the photoluminescence peaks is observed for decreasing flake thickness （as large as 0.2 eV for three single layers）. First-principles calculations predict an even larger increase in the bandgap, 0.40 eV, for three single layers, and as much as 1.1 eV for a single layer. These results are promising from the point of view of the versatility of this material for optoelectronic applications at the nanometer scale and compatible with Si and III-V technologies.
基金supported by the National Natural Science Foundation of China (21673161 and 21905210)the Sino-German Center for Research Promotion (GZ 1400)。
文摘Two-dimensional(2 D) transition metal phosphides(TMPs) are predicted with many novel properties and various applications. As a member of TMPs family, molybdenum phosphide(MoP) exhibits many exotic physicochemical properties. However, the synthesis of high-quality2 D MoP single crystals is not reported due to the lack of reliable fabrication method, which limits the exploration of 2 D MoP. Here, we report the growth of high-quality ultrathin MoP single crystals with thickness down to 10 nm on liquid metals via chemical vapor deposition(CVD). The smooth surface of liquid Ga is regarded as a suitable growth substrate for producing 2 D MoP single crystals. The Mo source diffuses toward the Ga surface due to the high surface energy to react with phosphorus source, thus to fabricate ultrathin MoP single crystals. Then, we study the second harmonic generation(SHG) of 2 D MoP for the first time due to its intrinsic noncentrosymmetric structure. Our study provides an new approach to synthesize and explore other 2 D TMPs for future applications.
