The critical misfit of epitaxial growth metallic thin films f_c was thermodynamically considered. It is found that there exists a competition between the energy of the misfit dislocation of film and non-coherent inter...The critical misfit of epitaxial growth metallic thin films f_c was thermodynamically considered. It is found that there exists a competition between the energy of the misfit dislocation of film and non-coherent interface energy of film-substrate. Equilibrium between these energies was present at a critical atomic misfit f_c. When the atomic misfit is larger than the critical value, epitaxial growth does not occur. The critical misfit of the epitaxial growth thin films can be predicted. The results show that f_c is proportional to the non-coherent interface energy of the film-substrate, and inversely proportional to the elastic modulus and the thickness of the film.展开更多
基金Project(2004CB619301) supported by the National Key Fundamental Research and Development Program of China Pro ject(50025101) supported by the National Natural Science Foundation of China
文摘The critical misfit of epitaxial growth metallic thin films f_c was thermodynamically considered. It is found that there exists a competition between the energy of the misfit dislocation of film and non-coherent interface energy of film-substrate. Equilibrium between these energies was present at a critical atomic misfit f_c. When the atomic misfit is larger than the critical value, epitaxial growth does not occur. The critical misfit of the epitaxial growth thin films can be predicted. The results show that f_c is proportional to the non-coherent interface energy of the film-substrate, and inversely proportional to the elastic modulus and the thickness of the film.
