Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation o...Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB, and input and output return losses over 10dB from 8 to 20GHz. The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm. These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.展开更多
Two dinuclear lanthanide (Ln) complexes, formulated as [phen2Ln2(HCOO)4(HCOO)2 2x(NO3)2x] (1, Ln = Gd and x = 0.52; 2, Ln = Er and x = 0.90; phen = 1,10-phenanthroline), were synthesized and characterized. They are is...Two dinuclear lanthanide (Ln) complexes, formulated as [phen2Ln2(HCOO)4(HCOO)2 2x(NO3)2x] (1, Ln = Gd and x = 0.52; 2, Ln = Er and x = 0.90; phen = 1,10-phenanthroline), were synthesized and characterized. They are isostructural. The dinuclear molecule consists of two Ln3+ bridged by four formate groups and chelated by phen and formate/nitrate ligands, and the Ln3+ possesses a coordination environment of distorted tri-capped trigonal prism of LnOTN2. Both compounds behave as paramag- nets between 2 and 300 K, but display two static field induced magnetic relaxation processes. One is slow and of spin-lattice type, and it results from the lifting of Kramer's degeneracy of the ground-states of both Gd3+ and Er3+, and the other is fast, and it might be spin-spin type.展开更多
文摘Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB, and input and output return losses over 10dB from 8 to 20GHz. The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm. These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.
基金supported by the National Natural Science Foundation of China (21171010, 20871007)the National Basic Research Program of China (2009CB929403)
文摘Two dinuclear lanthanide (Ln) complexes, formulated as [phen2Ln2(HCOO)4(HCOO)2 2x(NO3)2x] (1, Ln = Gd and x = 0.52; 2, Ln = Er and x = 0.90; phen = 1,10-phenanthroline), were synthesized and characterized. They are isostructural. The dinuclear molecule consists of two Ln3+ bridged by four formate groups and chelated by phen and formate/nitrate ligands, and the Ln3+ possesses a coordination environment of distorted tri-capped trigonal prism of LnOTN2. Both compounds behave as paramag- nets between 2 and 300 K, but display two static field induced magnetic relaxation processes. One is slow and of spin-lattice type, and it results from the lifting of Kramer's degeneracy of the ground-states of both Gd3+ and Er3+, and the other is fast, and it might be spin-spin type.
