在PECVD系统中,用layer by layer的方法原位制备了a-SiNx/nc-Si/a-SiNx双势垒结构样品。AFM测量结果显示nc-Si晶粒密度约为1.2×1011cm-2,通过Raman散射谱计算出薄膜中的平均晶粒尺寸为6nm,nc-Si层的晶化比约46%。在低频时的电容-电...在PECVD系统中,用layer by layer的方法原位制备了a-SiNx/nc-Si/a-SiNx双势垒结构样品。AFM测量结果显示nc-Si晶粒密度约为1.2×1011cm-2,通过Raman散射谱计算出薄膜中的平均晶粒尺寸为6nm,nc-Si层的晶化比约46%。在低频时的电容-电压(C-V)测试过程中,观察到了与共振隧穿效应有关的电容峰,由于样品中的nc-Si颗粒尺寸均匀性不高,没有观察到分立的隧穿电容峰结构,只得到扩展的电容峰。展开更多
利用等离子增强化学气相沉积(PECVD)技术,采用NH_3等离子体预氮化法淀积α-SiN_x介质膜,同时结合layer by layer生长nc-Si的方法一次性原位制备了α-SiN_x/nc-Si/α-SiN_x双势垒结构样品.通过原子力显微镜(AFM)测量,估算了nc-Si的密度为...利用等离子增强化学气相沉积(PECVD)技术,采用NH_3等离子体预氮化法淀积α-SiN_x介质膜,同时结合layer by layer生长nc-Si的方法一次性原位制备了α-SiN_x/nc-Si/α-SiN_x双势垒结构样品.通过原子力显微镜(AFM)测量,估算了nc-Si的密度为1.2×10^(11)cm^(-2).通过C-V测量研究镶嵌在SiN_x双势垒层中的nc-Si颗粒的电荷存储现象.C-V曲线出现明显的迥滞现象,迴滞窗口约为1 V,表明结构中电荷存储特性.根据迴滞窗口,计算了结构中存储电荷的密度,发现存储电荷密度与nc-Si层的晶粒密度具有相同的数量级.展开更多
为了提高量子环红外探测器(Quantum Ring Infrared Photodetector,QRIP)的灵敏度,抑制QRIP的暗电流,提出了一种具有倍增区、量子环吸收层以及Al_(0.3)Ga_(0.7)As/In_(0.1)Ga_(0.9)As双势垒结构的倍增型QRIP结构。基于量子环的三维薛定...为了提高量子环红外探测器(Quantum Ring Infrared Photodetector,QRIP)的灵敏度,抑制QRIP的暗电流,提出了一种具有倍增区、量子环吸收层以及Al_(0.3)Ga_(0.7)As/In_(0.1)Ga_(0.9)As双势垒结构的倍增型QRIP结构。基于量子环的三维薛定谔方程建立了QRIP的数值模型,并对QRIP的光电特性进行了仿真。仿真结果表明,倍增型QRIP的响应度可以达到40 A/W,归一化探测率可以达到2×10^(10)cm·Hz^(1/2)/W。展开更多
The transport property of electron through graphene-based double-barrier under a time periodic field is investigated. We study the influence of the system parameters and external field strength on the transmission pro...The transport property of electron through graphene-based double-barrier under a time periodic field is investigated. We study the influence of the system parameters and external field strength on the transmission probability. The results show that transmission exhibits various kinds of behavior with the change of parameters due to its angular anisotropy. One could control the values of transmission and conductivity as well as their distribution in each band by tuning the parameters.展开更多
文摘在PECVD系统中,用layer by layer的方法原位制备了a-SiNx/nc-Si/a-SiNx双势垒结构样品。AFM测量结果显示nc-Si晶粒密度约为1.2×1011cm-2,通过Raman散射谱计算出薄膜中的平均晶粒尺寸为6nm,nc-Si层的晶化比约46%。在低频时的电容-电压(C-V)测试过程中,观察到了与共振隧穿效应有关的电容峰,由于样品中的nc-Si颗粒尺寸均匀性不高,没有观察到分立的隧穿电容峰结构,只得到扩展的电容峰。
文摘利用等离子增强化学气相沉积(PECVD)技术,采用NH_3等离子体预氮化法淀积α-SiN_x介质膜,同时结合layer by layer生长nc-Si的方法一次性原位制备了α-SiN_x/nc-Si/α-SiN_x双势垒结构样品.通过原子力显微镜(AFM)测量,估算了nc-Si的密度为1.2×10^(11)cm^(-2).通过C-V测量研究镶嵌在SiN_x双势垒层中的nc-Si颗粒的电荷存储现象.C-V曲线出现明显的迥滞现象,迴滞窗口约为1 V,表明结构中电荷存储特性.根据迴滞窗口,计算了结构中存储电荷的密度,发现存储电荷密度与nc-Si层的晶粒密度具有相同的数量级.
文摘为了提高量子环红外探测器(Quantum Ring Infrared Photodetector,QRIP)的灵敏度,抑制QRIP的暗电流,提出了一种具有倍增区、量子环吸收层以及Al_(0.3)Ga_(0.7)As/In_(0.1)Ga_(0.9)As双势垒结构的倍增型QRIP结构。基于量子环的三维薛定谔方程建立了QRIP的数值模型,并对QRIP的光电特性进行了仿真。仿真结果表明,倍增型QRIP的响应度可以达到40 A/W,归一化探测率可以达到2×10^(10)cm·Hz^(1/2)/W。
基金Supported in part by the National Natural Science Foundation of China under Grant Nos. 10775100, 10974137, 11047172, 11047020, and 11047173by the Fund of Nuclear Theory Center of HIRFL of China
文摘The transport property of electron through graphene-based double-barrier under a time periodic field is investigated. We study the influence of the system parameters and external field strength on the transmission probability. The results show that transmission exhibits various kinds of behavior with the change of parameters due to its angular anisotropy. One could control the values of transmission and conductivity as well as their distribution in each band by tuning the parameters.
