为提高抗PVY烟草品种的分子育种效率,本研究针对抗病种质资源半坤村晒烟中隐性抗病基因eIF4E1的SNP位点G149C建立一种简单快速的双向等位基因特异性PCR(Bi-directional PCR amplification of specific alleles,Bi-PASA)检测方法,并对该...为提高抗PVY烟草品种的分子育种效率,本研究针对抗病种质资源半坤村晒烟中隐性抗病基因eIF4E1的SNP位点G149C建立一种简单快速的双向等位基因特异性PCR(Bi-directional PCR amplification of specific alleles,Bi-PASA)检测方法,并对该检测方法的特异性、准确度及实际应用效果进行验证。结果表明,建立的Bi-PASA检测方法能够在一个PCR反应中有效区分eIF4E1基因G149C位点3种基因型:野生型GG、杂合突变型GC、纯合突变型CC。利用Bi-PASA检测方法可以对K326×半坤村晒烟F2分离群体的基因型进行有效鉴别,且鉴定结果与普通的等位基因特异性PCR(allele-specific PCR,AS-PCR)以及直接测序法的鉴定结果一致。综上所述,本研究建立的Bi-PASA检测方法特异性强、准确度高、操作简便,可更好地应用于eIF4E1基因的分子标记辅助育种。展开更多
Growth of nano Si and Al wires on the Si(100) surfaces is investigated by computer simulation, including the anisotropic diffusion and the anisotropic sticking. The diffusion rates along and across the substrate dimer...Growth of nano Si and Al wires on the Si(100) surfaces is investigated by computer simulation, including the anisotropic diffusion and the anisotropic sticking. The diffusion rates along and across the substrate dimer rows are different, so are the sticking probabilities of an adatom, at the end sites of existing islands or the side sites. Both one\|dimensional wires of Si and Al are perpendicular to the dimer rows of the substrate, though the diffusion of Si adatoms is contrary to that of Al adatoms, i.e. Si adatoms diffuse faster along the dimer rows while Al adatoms faster across the dimer rows. The simulation results also show that the shape anisotropy of islands is due to the sticking anisotropy rather than the diffusion anisotropy, which is in agreement with the experiments.展开更多
文摘为提高抗PVY烟草品种的分子育种效率,本研究针对抗病种质资源半坤村晒烟中隐性抗病基因eIF4E1的SNP位点G149C建立一种简单快速的双向等位基因特异性PCR(Bi-directional PCR amplification of specific alleles,Bi-PASA)检测方法,并对该检测方法的特异性、准确度及实际应用效果进行验证。结果表明,建立的Bi-PASA检测方法能够在一个PCR反应中有效区分eIF4E1基因G149C位点3种基因型:野生型GG、杂合突变型GC、纯合突变型CC。利用Bi-PASA检测方法可以对K326×半坤村晒烟F2分离群体的基因型进行有效鉴别,且鉴定结果与普通的等位基因特异性PCR(allele-specific PCR,AS-PCR)以及直接测序法的鉴定结果一致。综上所述,本研究建立的Bi-PASA检测方法特异性强、准确度高、操作简便,可更好地应用于eIF4E1基因的分子标记辅助育种。
基金Project Supported by National Natural Science Foundation of China Under Grant !No.4 9672 0 95Natural ScienceFoundation of Zh
文摘Growth of nano Si and Al wires on the Si(100) surfaces is investigated by computer simulation, including the anisotropic diffusion and the anisotropic sticking. The diffusion rates along and across the substrate dimer rows are different, so are the sticking probabilities of an adatom, at the end sites of existing islands or the side sites. Both one\|dimensional wires of Si and Al are perpendicular to the dimer rows of the substrate, though the diffusion of Si adatoms is contrary to that of Al adatoms, i.e. Si adatoms diffuse faster along the dimer rows while Al adatoms faster across the dimer rows. The simulation results also show that the shape anisotropy of islands is due to the sticking anisotropy rather than the diffusion anisotropy, which is in agreement with the experiments.
