A novel optoelectronic functional circuit with heterojunction phototransistors (HPTs) and resonant tunneling diodes (RTDs) is described,which presents the function of both photocurrent switching and photo-current latc...A novel optoelectronic functional circuit with heterojunction phototransistors (HPTs) and resonant tunneling diodes (RTDs) is described,which presents the function of both photocurrent switching and photo-current latching.These behaviors have been demonstrated by simulating experiments and circuit simulation.Furthermore,basing on photo-current latching behavior,various photo-controlled basis logic elements such as delayed flip-flop (DFF) can be designed and fabricated.展开更多
A technology for the monolithic integration of resonant tunneling diodes （RTDs） and high electron mobility transistors （HEMTs） is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaA...A technology for the monolithic integration of resonant tunneling diodes （RTDs） and high electron mobility transistors （HEMTs） is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2 ： 1 with a peak current density of 22. 5kA/cm^2. The HEMT has a 1μm gate length with a - 1V threshold voltage. A logic circuit called a monostable-to-bistable transition logic element （MOBILE） circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.展开更多
文摘A novel optoelectronic functional circuit with heterojunction phototransistors (HPTs) and resonant tunneling diodes (RTDs) is described,which presents the function of both photocurrent switching and photo-current latching.These behaviors have been demonstrated by simulating experiments and circuit simulation.Furthermore,basing on photo-current latching behavior,various photo-controlled basis logic elements such as delayed flip-flop (DFF) can be designed and fabricated.
文摘A technology for the monolithic integration of resonant tunneling diodes （RTDs） and high electron mobility transistors （HEMTs） is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2 ： 1 with a peak current density of 22. 5kA/cm^2. The HEMT has a 1μm gate length with a - 1V threshold voltage. A logic circuit called a monostable-to-bistable transition logic element （MOBILE） circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.
