A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing e...A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing excellent low current DC characteristics with β=60@V CE/I C=9.0V/300μA,β=100@5V/50mA,BV CBO=22V,f t/f max=5.4GHz/7.7GHz@3V/10mA is demonstrated.The PolyE SiGe HBT needs only 6 lithographical steps and cancels the growth of the thick emitter epitaxy layer,both of which show great potential for volume production.A 60-finger class-A SiGe linear power amplifer (PA) w ith 22dBm of 1dB compress point output power (P 1dB),11dB of power gain (G p) and 26.1% of power added efficiency (PAE) @900MHz,3.5V/0.2A is demonstrated.Another 120-finger class-A SiGe PA with 33.3dBm (2.1W) of P out,10.3dB of G p and 33.9% of PAE @900MHz,11V/0.52A is also demonstrated.展开更多
A multi-finger power SiGe heterojunction bipolar transistor （HBT） with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K co...A multi-finger power SiGe heterojunction bipolar transistor （HBT） with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K compared with that of an HBT with uniform finger spacing in the same operating conditions. The temperature profile across the device can be improved at different biases for the same HBT with non-uniform finger spacing. Because of the decrease in peak temperature and the improvement of temperature profile, the power SiGe HBT with non-uniform spacing can operate at higher bias and hence has higher power handling capability.展开更多
Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point (...Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point ( P 1dB ) is 24dBm,the output third order intercept (TOI) power is 39dBm under V cc of 4V.The highest power added efficiency (PAE) and PAE at 1dB compression point are 34% and 25%,respectively.The adjacent channel power rejection for CDMA signal is more than 42dBc,which complies with IS95 specification.展开更多
The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and...The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and the operating voltage ranging from 3 to 4V,the output power in Class C operation can reach 1 65W at 1GHz,with the gain of 8dB.The highest collector efficiency is 67 8% under 3V.展开更多
With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is designed.Through the optimization of the traditional bias network,the gain compres...With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is designed.Through the optimization of the traditional bias network,the gain compression at the low input power level is eliminated successfully.At 3.5V of supply voltage of the power amplifier after optimization exhibits 30dBm of maximum linear output power,43.4% of power added efficiency 109.7mA of a quite low quiescent bias current ,29.1dB of the corresponding gain,and -100dBc of the adjacent channel power rejection (ACPR) at the output power of 30dBm.展开更多
A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output match...A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm × 495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance： a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than - 10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OPtdB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.展开更多
文摘A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing excellent low current DC characteristics with β=60@V CE/I C=9.0V/300μA,β=100@5V/50mA,BV CBO=22V,f t/f max=5.4GHz/7.7GHz@3V/10mA is demonstrated.The PolyE SiGe HBT needs only 6 lithographical steps and cancels the growth of the thick emitter epitaxy layer,both of which show great potential for volume production.A 60-finger class-A SiGe linear power amplifer (PA) w ith 22dBm of 1dB compress point output power (P 1dB),11dB of power gain (G p) and 26.1% of power added efficiency (PAE) @900MHz,3.5V/0.2A is demonstrated.Another 120-finger class-A SiGe PA with 33.3dBm (2.1W) of P out,10.3dB of G p and 33.9% of PAE @900MHz,11V/0.52A is also demonstrated.
文摘A multi-finger power SiGe heterojunction bipolar transistor （HBT） with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K compared with that of an HBT with uniform finger spacing in the same operating conditions. The temperature profile across the device can be improved at different biases for the same HBT with non-uniform finger spacing. Because of the decrease in peak temperature and the improvement of temperature profile, the power SiGe HBT with non-uniform spacing can operate at higher bias and hence has higher power handling capability.
文摘Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point ( P 1dB ) is 24dBm,the output third order intercept (TOI) power is 39dBm under V cc of 4V.The highest power added efficiency (PAE) and PAE at 1dB compression point are 34% and 25%,respectively.The adjacent channel power rejection for CDMA signal is more than 42dBc,which complies with IS95 specification.
文摘The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and the operating voltage ranging from 3 to 4V,the output power in Class C operation can reach 1 65W at 1GHz,with the gain of 8dB.The highest collector efficiency is 67 8% under 3V.
文摘With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is designed.Through the optimization of the traditional bias network,the gain compression at the low input power level is eliminated successfully.At 3.5V of supply voltage of the power amplifier after optimization exhibits 30dBm of maximum linear output power,43.4% of power added efficiency 109.7mA of a quite low quiescent bias current ,29.1dB of the corresponding gain,and -100dBc of the adjacent channel power rejection (ACPR) at the output power of 30dBm.
基金Supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2009ZX02303-003)
文摘A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm × 495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance： a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than - 10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OPtdB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.
