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Simulation and Analysis of Photo-charge Transfer Characteristics ofBipolar Junction Photogate Transistor for CMOS Imagers
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作者 JIN Xiang-liang,CHEN Jie,QIU Yu-lin(Microelectronics R&D Center,Chinese Academy of Sciences,Beijing 100029,CHN ) 《Semiconductor Photonics and Technology》 CAS 2003年第2期75-78,共4页
The principle of the two carriers contributing to carry the pixel signal charges is firstly presented,and then the bipolar junction photogate transistor(BJPT)with high performance is proposed for the CMOS image sensor... The principle of the two carriers contributing to carry the pixel signal charges is firstly presented,and then the bipolar junction photogate transistor(BJPT)with high performance is proposed for the CMOS image sensor.The numerical analytical model of the photo-charge transfer for the bipolar junction photogate is established in detail. Some numerical simulations are obtained under 0.6 μm CMOS process,which show that its readout rate increases exponentially with the increase of the photo-charge at applied voltage. 展开更多
关键词 BJPT photo―charge transfer characteristics CMOS imagers
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