This work is concentrated on elucidating the mechanism of the electric field enhanced water dissociation. A simple model was established for the theoretical current-voltage characteristics in water dissociation proces...This work is concentrated on elucidating the mechanism of the electric field enhanced water dissociation. A simple model was established for the theoretical current-voltage characteristics in water dissociation process on a bipolar membrane based on the existence of a depletion layer and Onsager's theory. Particular attention was given to the influence of applied voltage on depletion thickness and the dissociation constant. The factors on the water splitting process, such as water diffusivity, water content, ion exchange capacity, temperature, relative permittivity, etc. Were adequately analysed based on the derived model equations and several suggestions were proposed for decreasing the applied voltage in practical operation. The water dissociation tests were conducted and compared with both the theoretical calculation and the measured current-voltage curves reported in the literature, which showed a very good prediction to practical current-voltage behavior of a bipolar membrane at high current densities when the splitting of water actually commenced.展开更多
A T equivalent high frequency heterojunction bipolar transistor (HBT) noise model is reported.This model is derived from Hawkins noise model commonly used in Si BJT.The main modifications include the influence of th...A T equivalent high frequency heterojunction bipolar transistor (HBT) noise model is reported.This model is derived from Hawkins noise model commonly used in Si BJT.The main modifications include the influence of the ideality factor,emitter resistance,intrinsic base collector capacitance,extrinsic base collector capacitance and other parasitic elements of HBT represented in equivalent circuit topology.In order to calculate accurate noise parameters from the equivalent circuit,the noise correlation matrix method is used to avoid any simplifications generated in circuit transformations and complex noise measurements.The analysis of the influence of the equivalent circuit elements on the minimum noise figure is reported,the results of analysis agree well with the physics explanations.By means of the formulae derived from device physics of HBT,the influence of device parameters on the minimum noise figure is also represented.展开更多
Based on the region model of lambda bipolar transistor ( LBT), a dividing region theory model of PLBT is set up,simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bi...Based on the region model of lambda bipolar transistor ( LBT), a dividing region theory model of PLBT is set up,simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bipolar transistor ( PLBT) are characterized by a simple circuit model. Through mathematical analysis of the equivalent circuit, the typical characteristics curve is divided into positive resistance, peak, negative resistance and cutoff regions. Secondly, by analyzing and simulating this model, the ratio of MOSFET width to channel length, threshold voltage and common emitter gain are discovered as the main structure parameters that determine the characteristic curves of PLBT. And peak region width, peak current value, negative resistance value and valley voltage value of PLBT can be changed conveniently according to the actual demands by modifying these parameters. Finally comparisons of the characteristics of the fabricated devices and the simu- lation results are made, which show that the analytical results are in agreement with the observed devices characteristics.展开更多
In this paper, we study the asymptotic behavior of the solutions to the bipolar hydrodynamic model with Dirichlet boundary conditions. It is shown that the initial boundary problem of the model admits a global smooth ...In this paper, we study the asymptotic behavior of the solutions to the bipolar hydrodynamic model with Dirichlet boundary conditions. It is shown that the initial boundary problem of the model admits a global smooth solution which decays to the steady state exponentially fast.展开更多
基金Supported by the National Natural Science Foundation of China (No. 29976040), the Natural Science Foundation of Anhui Province (No. 99045431) and Youth Foundation of USTC.
文摘This work is concentrated on elucidating the mechanism of the electric field enhanced water dissociation. A simple model was established for the theoretical current-voltage characteristics in water dissociation process on a bipolar membrane based on the existence of a depletion layer and Onsager's theory. Particular attention was given to the influence of applied voltage on depletion thickness and the dissociation constant. The factors on the water splitting process, such as water diffusivity, water content, ion exchange capacity, temperature, relative permittivity, etc. Were adequately analysed based on the derived model equations and several suggestions were proposed for decreasing the applied voltage in practical operation. The water dissociation tests were conducted and compared with both the theoretical calculation and the measured current-voltage curves reported in the literature, which showed a very good prediction to practical current-voltage behavior of a bipolar membrane at high current densities when the splitting of water actually commenced.
文摘A T equivalent high frequency heterojunction bipolar transistor (HBT) noise model is reported.This model is derived from Hawkins noise model commonly used in Si BJT.The main modifications include the influence of the ideality factor,emitter resistance,intrinsic base collector capacitance,extrinsic base collector capacitance and other parasitic elements of HBT represented in equivalent circuit topology.In order to calculate accurate noise parameters from the equivalent circuit,the noise correlation matrix method is used to avoid any simplifications generated in circuit transformations and complex noise measurements.The analysis of the influence of the equivalent circuit elements on the minimum noise figure is reported,the results of analysis agree well with the physics explanations.By means of the formulae derived from device physics of HBT,the influence of device parameters on the minimum noise figure is also represented.
基金Supported by "973" National Key Basic Research Program ( No. 2002CB311905).
文摘Based on the region model of lambda bipolar transistor ( LBT), a dividing region theory model of PLBT is set up,simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bipolar transistor ( PLBT) are characterized by a simple circuit model. Through mathematical analysis of the equivalent circuit, the typical characteristics curve is divided into positive resistance, peak, negative resistance and cutoff regions. Secondly, by analyzing and simulating this model, the ratio of MOSFET width to channel length, threshold voltage and common emitter gain are discovered as the main structure parameters that determine the characteristic curves of PLBT. And peak region width, peak current value, negative resistance value and valley voltage value of PLBT can be changed conveniently according to the actual demands by modifying these parameters. Finally comparisons of the characteristics of the fabricated devices and the simu- lation results are made, which show that the analytical results are in agreement with the observed devices characteristics.
文摘In this paper, we study the asymptotic behavior of the solutions to the bipolar hydrodynamic model with Dirichlet boundary conditions. It is shown that the initial boundary problem of the model admits a global smooth solution which decays to the steady state exponentially fast.
