Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact...Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance (NDR) and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT.the groove is the key factor producing NDR.展开更多
In order to charge batteries and supply all the electrical devices like wheel-motors used in a heavy-duty hybrid electric vehicle, a solution consists in using an assembly permanent magnet generator driven by a diesel...In order to charge batteries and supply all the electrical devices like wheel-motors used in a heavy-duty hybrid electric vehicle, a solution consists in using an assembly permanent magnet generator driven by a diesel engine and a three-phase insulated gate bipolar transistor/diodes bridge controlled rectifier connected to the battery. In this work, hysteresis current control strategies combined with a judicious current sensing mode for the assembly permanent magnet synchronous machine-controlled rectifier are investigated. Main issues first concern the different kinds of transistors switching modes allowed by the proposed current sensing mode when the machine operates either as a generator or as a motor. Second, the modulated hysteresis method is presented, which merges the performances of robustness and dynamic of the classical hysteresis method and imposes the switching frequency alike pulsewidth modulation techniques. A test bench at reduced power permits to test the switching modes as well as classical and modulated hysteresis methods for both motor and generator operating modes and to validate the simulation predictions. The digital signal processor algorithm elaborated for the control strategy is flexible and adaptable to all kinds of transistor switchings and machine operating modes.展开更多
基金Supported by "973" National Key Basic Research Program ( No. 2002CB311905) andYoung Teacher Foundation of Tianjin University.
文摘Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance (NDR) and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT.the groove is the key factor producing NDR.
文摘In order to charge batteries and supply all the electrical devices like wheel-motors used in a heavy-duty hybrid electric vehicle, a solution consists in using an assembly permanent magnet generator driven by a diesel engine and a three-phase insulated gate bipolar transistor/diodes bridge controlled rectifier connected to the battery. In this work, hysteresis current control strategies combined with a judicious current sensing mode for the assembly permanent magnet synchronous machine-controlled rectifier are investigated. Main issues first concern the different kinds of transistors switching modes allowed by the proposed current sensing mode when the machine operates either as a generator or as a motor. Second, the modulated hysteresis method is presented, which merges the performances of robustness and dynamic of the classical hysteresis method and imposes the switching frequency alike pulsewidth modulation techniques. A test bench at reduced power permits to test the switching modes as well as classical and modulated hysteresis methods for both motor and generator operating modes and to validate the simulation predictions. The digital signal processor algorithm elaborated for the control strategy is flexible and adaptable to all kinds of transistor switchings and machine operating modes.
