Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact...Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance (NDR) and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT.the groove is the key factor producing NDR.展开更多
This paper presents a transition-mode zero-voltage-switching inverter for the cooker magnetron of household microwave ovens. The inverter drives a leakage transformer to generate the required high voltage and stabiliz...This paper presents a transition-mode zero-voltage-switching inverter for the cooker magnetron of household microwave ovens. The inverter drives a leakage transformer to generate the required high voltage and stabilized current. For achieving zero-voltage switching, a transition-mode driver L6561 is utilized to detect the ending of transformer resonance and drive an insulated-gate-bipolar-transistor. As transistor is conducted, rectified direct-current voltage drives the transformer. While transistor is cut off, transformer resonates with a parallel capacitor. Transistor conduction time and magnetron power are controlled with a 16-bit digital signal controller dsPIC30F4011. For widening the working range, transistor conduction time is set to be inversely changed with line-frequency input voltage. To demonstrate the analysis and design of this paper, a 1 kW inverter circuit is built. Experimental results show the feasibility and usefulness of the designed magnetron power supply.展开更多
基金Supported by "973" National Key Basic Research Program ( No. 2002CB311905) andYoung Teacher Foundation of Tianjin University.
文摘Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance (NDR) and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT.the groove is the key factor producing NDR.
文摘This paper presents a transition-mode zero-voltage-switching inverter for the cooker magnetron of household microwave ovens. The inverter drives a leakage transformer to generate the required high voltage and stabilized current. For achieving zero-voltage switching, a transition-mode driver L6561 is utilized to detect the ending of transformer resonance and drive an insulated-gate-bipolar-transistor. As transistor is conducted, rectified direct-current voltage drives the transformer. While transistor is cut off, transformer resonates with a parallel capacitor. Transistor conduction time and magnetron power are controlled with a 16-bit digital signal controller dsPIC30F4011. For widening the working range, transistor conduction time is set to be inversely changed with line-frequency input voltage. To demonstrate the analysis and design of this paper, a 1 kW inverter circuit is built. Experimental results show the feasibility and usefulness of the designed magnetron power supply.
