A 4.1 GHz two-stage cascode Low-Noise Amplifier(LNA) with Electro-Static Discharge(ESD) protection is presented in this paper.The LNA has been optimized using ESD and LNA co-design methodology to achieve a good perfor...A 4.1 GHz two-stage cascode Low-Noise Amplifier(LNA) with Electro-Static Discharge(ESD) protection is presented in this paper.The LNA has been optimized using ESD and LNA co-design methodology to achieve a good performance.Post-layout simulation results exhibit a forward gain(S21) of about 21 dB, a reverse isolation(S12) of less than-18 dB, an input return loss(S11) of less than-16 dB, and an output return loss(S22) of less than-17 dB.Moreover, the Noise Figure(NF) is 2.6 dB.This design is implemented in TSMC0.18μm RF CMOS technology and the die area is 0.9 mm×0.9 mm.展开更多
文摘A 4.1 GHz two-stage cascode Low-Noise Amplifier(LNA) with Electro-Static Discharge(ESD) protection is presented in this paper.The LNA has been optimized using ESD and LNA co-design methodology to achieve a good performance.Post-layout simulation results exhibit a forward gain(S21) of about 21 dB, a reverse isolation(S12) of less than-18 dB, an input return loss(S11) of less than-16 dB, and an output return loss(S22) of less than-17 dB.Moreover, the Noise Figure(NF) is 2.6 dB.This design is implemented in TSMC0.18μm RF CMOS technology and the die area is 0.9 mm×0.9 mm.
