An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency （fT） of 162GHz is reported. The emitter size is 0.8μm × 12μm, the maximum DC gain is 120, the offset voltage ...An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency （fT） of 162GHz is reported. The emitter size is 0.8μm × 12μm, the maximum DC gain is 120, the offset voltage is 0.10V,and the typical breakdown voltage at Ic = 0. 1μA is 3.8V. This device is suitable for high-speed low-power applications,such as OEIC receivers and analog-to-digital converters.展开更多
A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many diffe...A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many different scaling limits for various elements.Meanwhile,the spacer insulator shows a kind of width thickness on device drain current and circuit speed.A model about that effect is developed and offers design consideration for future.A new design of channel doping profile,called SCD,is also discussed here in detail.The DG device with SCD can achieve a good balance between the volume inversion operation mode and the control of V th .Finally,a guideline to make a SADG MOSFET is presented.展开更多
A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A...A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A power HBT with double size of emitter of (3μm×15μm)×12 is fabricated.When the packaged HBT operates in class AB at a collector bias of 3V,a maximum 23dBm output power with 45% power added efficiency is achieved at 2GHz.The results show that the InGaP/GaAs power HBTs have great potential in mobile communication systems operating at low bias voltage.展开更多
Based on a simplified 3-DOF model of twin-tower structure linked by a sky-bridge,the frequency response functions,the displacement power spectral density(PSD)functions,and the time-averaged total vibration energy were...Based on a simplified 3-DOF model of twin-tower structure linked by a sky-bridge,the frequency response functions,the displacement power spectral density(PSD)functions,and the time-averaged total vibration energy were derived,by assuming the white noise as the earthquake excitation.The effects of connecting parameters,such as linking stiffness ratio and linking damping ratio,on the structural vibration responses were then studied,and the optimal connecting parameters were obtained to minimize the vibration energy of either the independent monomer tower or the integral structure.The influences of sky-bridge elevation position on the optimal connecting parameters were also discussed.Finally,the distribution characteristics of the top displacement PSD and the structural responses,excited by El Centro,Taft and artificial waves,were compared in both frequency and time domain.It is found that the connecting parameters at either end of connection interactively affect the responses of the towers.The optimal connecting parameters can greatly improve the damping connections on their seismic reduction effectiveness,but are unable to reduce the seismic responses of the towers to the best extent simultaneously.It is also indicated that the optimal connecting parameters derived from the simplified 3-DOF model are applicable for two multi-story structures linked by a sky-bridge with dampers.The seismic reduction effectiveness obtained varies from 0.3 to 1.0 with different sky-bridge mass ratio.The displacement responses of the example structures are reduced by approximately 22% with sky-bridge connections.展开更多
We propose a method that can achieve the Naxi-English bilingual word automatic alignment based on a log-linear model.This method defines the different Naxi-English structural feature functions,which are English-Naxi i...We propose a method that can achieve the Naxi-English bilingual word automatic alignment based on a log-linear model.This method defines the different Naxi-English structural feature functions,which are English-Naxi interval switching function and Naxi-English bilingual word position transformation function.With the manually labeled Naxi-English words alignment corpus,the parameters of the model are trained by using the minimum error,thus Naxi-English bilingual word alignment is achieved automatically.Experiments are conducted with IBM Model 3 as a benchmark,and the Naxi language constraints are introduced.The final experiment results show that the proposed alignment method achieves very good results:the introduction of the language characteristic function can effectively improve the accuracy of the Naxi-English Bilingual Word Alignment.展开更多
The title compound [UO2 （p-CH3C6H4SOC4H9）2 （NO3 ）2] is triclinicwith space group P1. a=8. 651 （3）, b=9. 097（2）, c=9. 621 （2） A;a=92. 29（1）, β=95. 97（3）, r=98. 25（3）, V=744. 1（3） A3, Z=1, Mr=786.41, ...The title compound [UO2 （p-CH3C6H4SOC4H9）2 （NO3 ）2] is triclinicwith space group P1. a=8. 651 （3）, b=9. 097（2）, c=9. 621 （2） A;a=92. 29（1）, β=95. 97（3）, r=98. 25（3）, V=744. 1（3） A3, Z=1, Mr=786.41, Dc=1. 425 g/cm3. u=5. 626 mm-1, F （000） =300. R=0. 030, Rw=0. 071 for 2917 reflectionswith I≥2（I）. Uranyl ion is coordinated to six oxygen atoms, of which two are fromtwo monodenate sulfoxides and the others from two nitrate groups. The coordinationPOlyhedron around U is a hexagonal bipyramid, the U atom is in the center of symmetry.展开更多
A novel two-stage spectral compression structure which employs a logarithmic dispersion increasing fiber （DIF） in- terconnected with a highly nonlinear linear fiber-nonlinear optical loop mirror （HNLF-NOLM） is pro...A novel two-stage spectral compression structure which employs a logarithmic dispersion increasing fiber （DIF） in- terconnected with a highly nonlinear linear fiber-nonlinear optical loop mirror （HNLF-NOLM） is proposed and dem- onstrated by numerical simulation. The numerical simulation is implemented by solving the generalized nonlinear SchrOdinger equation using split-step Fourier method, where the soliton number is in the range of 0.5≤N≤1.4. The re- suits show that the spectra are well-compressed and low-pedestal, and the maximum spectral compression ratio （SCR） can reach 10.93 when N=l.4.展开更多
Using the first-principles band-structure method and a special quasirandom structure(SQS) approach,we have systematically calculated the alloy bowing coefficients and the nature band offsets of SnxZn1-x Te alloys.We s...Using the first-principles band-structure method and a special quasirandom structure(SQS) approach,we have systematically calculated the alloy bowing coefficients and the nature band offsets of SnxZn1-x Te alloys.We show that the bowing coefficients and band gaps of these alloys are sensitively composition dependent.Due to wave functions full overlapping and delocalization of the Sn outermost p orbits and Zn s orbits,the coupling between these states is very strong,resulting in a significant downshift of conduction band edge with the increase of the Sn concentration x,While the valence band edge keeps almost unchanged compared with that of the binary ZnTe,thus improving the possibility for ambipolar-doping.展开更多
文摘An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency （fT） of 162GHz is reported. The emitter size is 0.8μm × 12μm, the maximum DC gain is 120, the offset voltage is 0.10V,and the typical breakdown voltage at Ic = 0. 1μA is 3.8V. This device is suitable for high-speed low-power applications,such as OEIC receivers and analog-to-digital converters.
文摘A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many different scaling limits for various elements.Meanwhile,the spacer insulator shows a kind of width thickness on device drain current and circuit speed.A model about that effect is developed and offers design consideration for future.A new design of channel doping profile,called SCD,is also discussed here in detail.The DG device with SCD can achieve a good balance between the volume inversion operation mode and the control of V th .Finally,a guideline to make a SADG MOSFET is presented.
文摘A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A power HBT with double size of emitter of (3μm×15μm)×12 is fabricated.When the packaged HBT operates in class AB at a collector bias of 3V,a maximum 23dBm output power with 45% power added efficiency is achieved at 2GHz.The results show that the InGaP/GaAs power HBTs have great potential in mobile communication systems operating at low bias voltage.
基金Project(51178203)supported by the National Natural Science Foundation of China
文摘Based on a simplified 3-DOF model of twin-tower structure linked by a sky-bridge,the frequency response functions,the displacement power spectral density(PSD)functions,and the time-averaged total vibration energy were derived,by assuming the white noise as the earthquake excitation.The effects of connecting parameters,such as linking stiffness ratio and linking damping ratio,on the structural vibration responses were then studied,and the optimal connecting parameters were obtained to minimize the vibration energy of either the independent monomer tower or the integral structure.The influences of sky-bridge elevation position on the optimal connecting parameters were also discussed.Finally,the distribution characteristics of the top displacement PSD and the structural responses,excited by El Centro,Taft and artificial waves,were compared in both frequency and time domain.It is found that the connecting parameters at either end of connection interactively affect the responses of the towers.The optimal connecting parameters can greatly improve the damping connections on their seismic reduction effectiveness,but are unable to reduce the seismic responses of the towers to the best extent simultaneously.It is also indicated that the optimal connecting parameters derived from the simplified 3-DOF model are applicable for two multi-story structures linked by a sky-bridge with dampers.The seismic reduction effectiveness obtained varies from 0.3 to 1.0 with different sky-bridge mass ratio.The displacement responses of the example structures are reduced by approximately 22% with sky-bridge connections.
基金supported by the National Nature Science Foundation of China under Grants No.60863011,No.61175068,No.61100205,No.60873001the Fundamental Research Funds for the Central Universities under Grant No.2009RC0212+1 种基金the National Innovation Fund for Technology-based Firms under Grant No.11C26215305905the Open Fund of Software Engineering Key Laboratory of Yunnan Province under Grant No.2011SE14
文摘We propose a method that can achieve the Naxi-English bilingual word automatic alignment based on a log-linear model.This method defines the different Naxi-English structural feature functions,which are English-Naxi interval switching function and Naxi-English bilingual word position transformation function.With the manually labeled Naxi-English words alignment corpus,the parameters of the model are trained by using the minimum error,thus Naxi-English bilingual word alignment is achieved automatically.Experiments are conducted with IBM Model 3 as a benchmark,and the Naxi language constraints are introduced.The final experiment results show that the proposed alignment method achieves very good results:the introduction of the language characteristic function can effectively improve the accuracy of the Naxi-English Bilingual Word Alignment.
文摘The title compound [UO2 （p-CH3C6H4SOC4H9）2 （NO3 ）2] is triclinicwith space group P1. a=8. 651 （3）, b=9. 097（2）, c=9. 621 （2） A;a=92. 29（1）, β=95. 97（3）, r=98. 25（3）, V=744. 1（3） A3, Z=1, Mr=786.41, Dc=1. 425 g/cm3. u=5. 626 mm-1, F （000） =300. R=0. 030, Rw=0. 071 for 2917 reflectionswith I≥2（I）. Uranyl ion is coordinated to six oxygen atoms, of which two are fromtwo monodenate sulfoxides and the others from two nitrate groups. The coordinationPOlyhedron around U is a hexagonal bipyramid, the U atom is in the center of symmetry.
基金supported by the National Basic Research Program of China(No.2012CB315701)the National Natural Science Foundation of China(No.61205109)
文摘A novel two-stage spectral compression structure which employs a logarithmic dispersion increasing fiber （DIF） in- terconnected with a highly nonlinear linear fiber-nonlinear optical loop mirror （HNLF-NOLM） is proposed and dem- onstrated by numerical simulation. The numerical simulation is implemented by solving the generalized nonlinear SchrOdinger equation using split-step Fourier method, where the soliton number is in the range of 0.5≤N≤1.4. The re- suits show that the spectra are well-compressed and low-pedestal, and the maximum spectral compression ratio （SCR） can reach 10.93 when N=l.4.
基金Supported by the National Basic Research Program of China under Grant No. 2011CB606405the Hunan Provincial Natural Science Foundation of China under Grant No. 11JJ4002the Fundamental Research Funds for the Central Universities
文摘Using the first-principles band-structure method and a special quasirandom structure(SQS) approach,we have systematically calculated the alloy bowing coefficients and the nature band offsets of SnxZn1-x Te alloys.We show that the bowing coefficients and band gaps of these alloys are sensitively composition dependent.Due to wave functions full overlapping and delocalization of the Sn outermost p orbits and Zn s orbits,the coupling between these states is very strong,resulting in a significant downshift of conduction band edge with the increase of the Sn concentration x,While the valence band edge keeps almost unchanged compared with that of the binary ZnTe,thus improving the possibility for ambipolar-doping.
