An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 l...An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.展开更多
This work is concentrated on elucidating the mechanism of the electric field enhanced water dissociation. A simple model was established for the theoretical current-voltage characteristics in water dissociation proces...This work is concentrated on elucidating the mechanism of the electric field enhanced water dissociation. A simple model was established for the theoretical current-voltage characteristics in water dissociation process on a bipolar membrane based on the existence of a depletion layer and Onsager's theory. Particular attention was given to the influence of applied voltage on depletion thickness and the dissociation constant. The factors on the water splitting process, such as water diffusivity, water content, ion exchange capacity, temperature, relative permittivity, etc. Were adequately analysed based on the derived model equations and several suggestions were proposed for decreasing the applied voltage in practical operation. The water dissociation tests were conducted and compared with both the theoretical calculation and the measured current-voltage curves reported in the literature, which showed a very good prediction to practical current-voltage behavior of a bipolar membrane at high current densities when the splitting of water actually commenced.展开更多
To improve the corrosion resistance of titanium(Ti)bipolar plate,titanium nitride(TiN)film was prepared on the surface of commercial TA1 pure titanium by magnetron reactive sputtering and pulse laser deposition(PLD)te...To improve the corrosion resistance of titanium(Ti)bipolar plate,titanium nitride(TiN)film was prepared on the surface of commercial TA1 pure titanium by magnetron reactive sputtering and pulse laser deposition(PLD)techniques,and the film prepared under different process parameters were evaluated.Results show that dense and complete TiN film can be obtained on TA1 surface under different preparation processes,and the corrosion current density of Ti substrate significantly increases.However,the composition of the film prepared by magnetron reactive sputtering is affected by the oxygen competition reaction,and its homogeneity is inferior to that of the film prepared by PLD.The comprehensive performance of the PLD-prepared film shows excellent characteristics in the terms of low corrosion current density(0.025μA·cm^(−2)),moderate corrosion overpotential(−0.106 V),and good hydrophobicity.展开更多
文摘An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.
基金Supported by the National Natural Science Foundation of China (No. 29976040), the Natural Science Foundation of Anhui Province (No. 99045431) and Youth Foundation of USTC.
文摘This work is concentrated on elucidating the mechanism of the electric field enhanced water dissociation. A simple model was established for the theoretical current-voltage characteristics in water dissociation process on a bipolar membrane based on the existence of a depletion layer and Onsager's theory. Particular attention was given to the influence of applied voltage on depletion thickness and the dissociation constant. The factors on the water splitting process, such as water diffusivity, water content, ion exchange capacity, temperature, relative permittivity, etc. Were adequately analysed based on the derived model equations and several suggestions were proposed for decreasing the applied voltage in practical operation. The water dissociation tests were conducted and compared with both the theoretical calculation and the measured current-voltage curves reported in the literature, which showed a very good prediction to practical current-voltage behavior of a bipolar membrane at high current densities when the splitting of water actually commenced.
基金National Key Research and Development Program of China(2022YFB4002100)。
文摘To improve the corrosion resistance of titanium(Ti)bipolar plate,titanium nitride(TiN)film was prepared on the surface of commercial TA1 pure titanium by magnetron reactive sputtering and pulse laser deposition(PLD)techniques,and the film prepared under different process parameters were evaluated.Results show that dense and complete TiN film can be obtained on TA1 surface under different preparation processes,and the corrosion current density of Ti substrate significantly increases.However,the composition of the film prepared by magnetron reactive sputtering is affected by the oxygen competition reaction,and its homogeneity is inferior to that of the film prepared by PLD.The comprehensive performance of the PLD-prepared film shows excellent characteristics in the terms of low corrosion current density(0.025μA·cm^(−2)),moderate corrosion overpotential(−0.106 V),and good hydrophobicity.
