光伏发电作为一种清洁能源技术,在可再生能源领域具有广阔的应用前景。光伏反向变流器作为光伏发电系统的核心组件之一,对系统的性能和效率至关重要。文章针对光伏反向变流器在光伏发电系统中的应用优化与性能分析进行了深入研究。通过...光伏发电作为一种清洁能源技术,在可再生能源领域具有广阔的应用前景。光伏反向变流器作为光伏发电系统的核心组件之一,对系统的性能和效率至关重要。文章针对光伏反向变流器在光伏发电系统中的应用优化与性能分析进行了深入研究。通过分析反向变流器的原理和结构,探究最大功率点跟踪(Maximum Power Point Tracking,MPPT)技术、控制策略、参数优化以及效率提升与损耗降低策略等优化方法。同时,结合性能分析与实验验证,对不同优化策略的效果进行评估和验证。研究结果为光伏发电系统的设计和运行提供了重要参考,有助于提高系统的性能和效率。展开更多
Previous studies have examined the effects of red light (R) on phototropism of maize ( Zea mays L. cv. Royaldent Hit 85) coleoptiles. The R effect on time-dependent phototropism (TDP) was further studied by characteri...Previous studies have examined the effects of red light (R) on phototropism of maize ( Zea mays L. cv. Royaldent Hit 85) coleoptiles. The R effect on time-dependent phototropism (TDP) was further studied by characterizing its fluence-response relationship. The results showed the R effect was a low-fluence-response, unlike those on pulse-induced phototropisms that show a very-low-fluence-response mode. A subsequent pulse of far-red light (FR) could reverse the R effect. TDP responsiveness, however, recovered as the following FR was extended, The FR-dependent increase in TDP responsiveness was obtained even coleoptiles were pretreated only with FR. It suggested that TDP responsiveness could also be established in response to a FR signal. The fluence-response relationship for the effect of FR was then investigated. The effect of FR depended on the time of irradiation and required high photon fluences. Because reciprocity was invalid at the higher fluence range, the effect of FR would be a high-irradiance-response mode. Relation between phytochrome action modes and possible multiple pathways for phototropic signal transduction was analyzed based on the experiment results.展开更多
A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by th...A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.展开更多
In this article, the dynamical process of the dielectric particle in the optical tweezer using the counter-propagating Gaussian pulses is investigated by the Langevin equation concerning the Brownian motion. The tempo...In this article, the dynamical process of the dielectric particle in the optical tweezer using the counter-propagating Gaussian pulses is investigated by the Langevin equation concerning the Brownian motion. The temporal stabilities of particle is simulated. The influence of the duration, repetition period and delay time between pulses on stability is discussed.展开更多
Here we report the theory formulation and the experiment realization of sum-frequency generation vibrational spectroscopy （SFG-VS） in the cross-propagation （XP） geometry or configuration. In the XP-SFG-VS, the vis...Here we report the theory formulation and the experiment realization of sum-frequency generation vibrational spectroscopy （SFG-VS） in the cross-propagation （XP） geometry or configuration. In the XP-SFG-VS, the visible and the infrared （IR） beams in the SFG experiment are delivered to the same location on the surface from visible and IR incident planes perpendicular to each other, avoiding the requirement to have windows or optics to be transparent to both the visible and IR frequencies. Therefore, the XP geometry is applicable to study surfaces in the enclosed vacuum or high pressure chambers with far infrared （FIR） frequencies that can directly access the metal oxide and other lower frequency surface modes, with much broader selection of visible and IR transparent window materials. The potential applications include surface science, material science, fundamental catalytic sciences, as well as low temperature molecular sciences, etc.展开更多
A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wi...A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.展开更多
文摘光伏发电作为一种清洁能源技术,在可再生能源领域具有广阔的应用前景。光伏反向变流器作为光伏发电系统的核心组件之一,对系统的性能和效率至关重要。文章针对光伏反向变流器在光伏发电系统中的应用优化与性能分析进行了深入研究。通过分析反向变流器的原理和结构,探究最大功率点跟踪(Maximum Power Point Tracking,MPPT)技术、控制策略、参数优化以及效率提升与损耗降低策略等优化方法。同时,结合性能分析与实验验证,对不同优化策略的效果进行评估和验证。研究结果为光伏发电系统的设计和运行提供了重要参考,有助于提高系统的性能和效率。
文摘Previous studies have examined the effects of red light (R) on phototropism of maize ( Zea mays L. cv. Royaldent Hit 85) coleoptiles. The R effect on time-dependent phototropism (TDP) was further studied by characterizing its fluence-response relationship. The results showed the R effect was a low-fluence-response, unlike those on pulse-induced phototropisms that show a very-low-fluence-response mode. A subsequent pulse of far-red light (FR) could reverse the R effect. TDP responsiveness, however, recovered as the following FR was extended, The FR-dependent increase in TDP responsiveness was obtained even coleoptiles were pretreated only with FR. It suggested that TDP responsiveness could also be established in response to a FR signal. The fluence-response relationship for the effect of FR was then investigated. The effect of FR depended on the time of irradiation and required high photon fluences. Because reciprocity was invalid at the higher fluence range, the effect of FR would be a high-irradiance-response mode. Relation between phytochrome action modes and possible multiple pathways for phototropic signal transduction was analyzed based on the experiment results.
文摘A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.
文摘In this article, the dynamical process of the dielectric particle in the optical tweezer using the counter-propagating Gaussian pulses is investigated by the Langevin equation concerning the Brownian motion. The temporal stabilities of particle is simulated. The influence of the duration, repetition period and delay time between pulses on stability is discussed.
文摘Here we report the theory formulation and the experiment realization of sum-frequency generation vibrational spectroscopy （SFG-VS） in the cross-propagation （XP） geometry or configuration. In the XP-SFG-VS, the visible and the infrared （IR） beams in the SFG experiment are delivered to the same location on the surface from visible and IR incident planes perpendicular to each other, avoiding the requirement to have windows or optics to be transparent to both the visible and IR frequencies. Therefore, the XP geometry is applicable to study surfaces in the enclosed vacuum or high pressure chambers with far infrared （FIR） frequencies that can directly access the metal oxide and other lower frequency surface modes, with much broader selection of visible and IR transparent window materials. The potential applications include surface science, material science, fundamental catalytic sciences, as well as low temperature molecular sciences, etc.
基金This work is supported by the National Natural Science Founda-tion of China (No. 60536030) the National High TechnologyResearch and Development Program of China (No.2005AA311030)
文摘A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.
