This paper describes a new method for active learning in content-based image retrieval. The proposed method firstly uses support vector machine (SVM) classifiers to learn an initial query concept. Then the proposed ac...This paper describes a new method for active learning in content-based image retrieval. The proposed method firstly uses support vector machine (SVM) classifiers to learn an initial query concept. Then the proposed active learning scheme employs similarity measure to check the current version space and selects images with maximum expected information gain to solicit user's label. Finally, the learned query is refined based on the user's further feedback. With the combination of SVM classifier and similarity measure, the proposed method can alleviate model bias existing in each of them. Our experiments on several query concepts show that the proposed method can learn the user's query concept quickly and effectively only with several iterations.展开更多
The formation of the retroreflected light field is introduced in the paper and the components of the retroreflected light field are analyzed.Furthermore,a deep analysis of the factors affecting energy distribution of ...The formation of the retroreflected light field is introduced in the paper and the components of the retroreflected light field are analyzed.Furthermore,a deep analysis of the factors affecting energy distribution of the retroreflected light,such as design deviation,angle of incidence,was made.The simulation of the retroreflected light field was done.Recommendation is made in detail on both the energy distribution of the retroreflected light field at different working distances and the energy distribution of the retroreflected light field at a short distance when the diverging light comes.At last,two kinds of measuring instrument for the retroreflector are introduced,one is the long tunnel measuring instrument,the other is the minitype measuring instrument based on the character of the retroreflector when the diverging light comes.展开更多
Field plate(FP)-terminated 4H-SiC trench gate MOSFETs are demonstrated in this work.N+/P?/N?/N+multiple epitaxial layers were grown on 3-inch N+type 4H-SiC substrate by chemical vapor deposition(CVD),and then the 4H-S...Field plate(FP)-terminated 4H-SiC trench gate MOSFETs are demonstrated in this work.N+/P?/N?/N+multiple epitaxial layers were grown on 3-inch N+type 4H-SiC substrate by chemical vapor deposition(CVD),and then the 4H-SiC trench gate MOSFETs were fabricated based on the standard trench transistor fabrication.Current-voltage measurements in forward and reverse bias have been performed on different devices with and without FP protections.It is found that more than 60%of the devices protected with FP termination are able to block 850 V.The measurements also show that the devices have the small leakage currents 0.15 nA at 600 V and 2.5 nA at 800 V,respectively.The experimental results also were compared with the simulated results,which show good agreement with each other in the trend.The limited performance of the devices is mainly because of the damage induced on the trench sidewalls from the etching process and the quality of the SiO2 films.Therefore,the 4H-SiC trench gate MOSFETs are expected to be optimized by reducing the etching damage and growing high-quality SiO2 dielectric films.展开更多
文摘This paper describes a new method for active learning in content-based image retrieval. The proposed method firstly uses support vector machine (SVM) classifiers to learn an initial query concept. Then the proposed active learning scheme employs similarity measure to check the current version space and selects images with maximum expected information gain to solicit user's label. Finally, the learned query is refined based on the user's further feedback. With the combination of SVM classifier and similarity measure, the proposed method can alleviate model bias existing in each of them. Our experiments on several query concepts show that the proposed method can learn the user's query concept quickly and effectively only with several iterations.
文摘The formation of the retroreflected light field is introduced in the paper and the components of the retroreflected light field are analyzed.Furthermore,a deep analysis of the factors affecting energy distribution of the retroreflected light,such as design deviation,angle of incidence,was made.The simulation of the retroreflected light field was done.Recommendation is made in detail on both the energy distribution of the retroreflected light field at different working distances and the energy distribution of the retroreflected light field at a short distance when the diverging light comes.At last,two kinds of measuring instrument for the retroreflector are introduced,one is the long tunnel measuring instrument,the other is the minitype measuring instrument based on the character of the retroreflector when the diverging light comes.
基金supported by the National Natural Science Foundation of China(Grant Nos.61176070,61274079)the Natural Science Foundation of Shaanxi Province(Grant No.2013JQ8012)+1 种基金the Doctoral Fund of Ministry of Education of China(Grant Nos.20110203110010,201302031-0017)the Key Specific Projects of Ministry of Education of China(Grant No.625010101)
文摘Field plate(FP)-terminated 4H-SiC trench gate MOSFETs are demonstrated in this work.N+/P?/N?/N+multiple epitaxial layers were grown on 3-inch N+type 4H-SiC substrate by chemical vapor deposition(CVD),and then the 4H-SiC trench gate MOSFETs were fabricated based on the standard trench transistor fabrication.Current-voltage measurements in forward and reverse bias have been performed on different devices with and without FP protections.It is found that more than 60%of the devices protected with FP termination are able to block 850 V.The measurements also show that the devices have the small leakage currents 0.15 nA at 600 V and 2.5 nA at 800 V,respectively.The experimental results also were compared with the simulated results,which show good agreement with each other in the trend.The limited performance of the devices is mainly because of the damage induced on the trench sidewalls from the etching process and the quality of the SiO2 films.Therefore,the 4H-SiC trench gate MOSFETs are expected to be optimized by reducing the etching damage and growing high-quality SiO2 dielectric films.
