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用C—V法测量Si—SiO_2系统的产生寿命和表面产生速度
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作者 余秉才 吴振辉 《中山大学学报(自然科学版)》 CAS 1981年第1期-,共8页
引言目前常用MOS 器件的C—V 特性测量Si—SiO2界面特性,但是,无论用准静态C—V法或高频C—V 法,都难以测量由陷阱产生少数载流子的特性.为了测量陷阱的少数载流子产生率,曾发展了一些方法,但是,这些实验方法数据处理烦琐,不宜在生产中... 引言目前常用MOS 器件的C—V 特性测量Si—SiO2界面特性,但是,无论用准静态C—V法或高频C—V 法,都难以测量由陷阱产生少数载流子的特性.为了测量陷阱的少数载流子产生率,曾发展了一些方法,但是,这些实验方法数据处理烦琐,不宜在生产中应用.在1977年以后,由J.G.Simmons 等发展了MOS 展开更多
关键词 器件 非平衡 扫描电压 SiO2 电荷数目 少数载流子 载流子(半导体) 反型电荷 静电计 耗尽层 准平衡 热力学平衡 栅压 准静态
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Unusual Charge Transport and Spin Response of Doped Bilayer Triangular Antiferromagnets 被引量:3
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作者 LIANGying MATian-Xing FENGShi-Ping 《Communications in Theoretical Physics》 SCIE CAS CSCD 2003年第6期749-756,共8页
Within the t-J model, the charge transport and spin response of the doped bilayer triangular antiferromagnetare studied by considering the bilayer interaction. Although the bilayer interaction leads to the band splitt... Within the t-J model, the charge transport and spin response of the doped bilayer triangular antiferromagnetare studied by considering the bilayer interaction. Although the bilayer interaction leads to the band splitting in theelectronic structure, the qualitative behaviors of the physical properties are the same as in the single layer case. Theconductivity spectrum shows the low-energy peak and unusual midinfrared band, the temperature-dependent resistivityis characterized by the nonlinearity metallic-like behavior in the higher temperature range and the deviation from themetallic-like behavior in the lower temperature range and the commensurate neutron scattering peak near the half-fillingis split into six incommensurate peaks in the underdoped regime, with the incommensurability increasing with the holeconcentration at lower dopings, and saturating at higher dopings. 展开更多
关键词 charge transport spin response t-J model
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