We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties o...We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties of the thin films were characterized using various techniques.At 6 V bias,a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained,and this responsibility dropped quickly and reached the noise floor in the visible region.Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.展开更多
基金supported by the National Natural Science Foundation of China (Grant No.50972007)the Beijing Municipal Natural Science Foundation (Grant No.4092035)+3 种基金the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No.2011CB932703)the Special Items Fund of Beijing Municipal Commission of Educationthe Opened Fund of State Key Laboratory on Integrated Optoelectronicsthe National Science Fund for Distinguished Young Scholars (Grant No.60825407)
文摘We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties of the thin films were characterized using various techniques.At 6 V bias,a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained,and this responsibility dropped quickly and reached the noise floor in the visible region.Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.
