A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser i...A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 3 05ps at 1 044μm.The pulse frequency is 375MHz;the output power is 45mW.展开更多
The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of...The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of the size of the DBR on its coupling coefficient and reflectivity,and hence on the linewidth of the laser diodes. The linewidths were measured by employing a self heterodyne linewidth measurement system. The experimental and calculated data for DBR reflectivity and spectral linewidth are given. The relationship between these data and the dimensions of the DBR is analyzed. Based on this analysis,the effect of the DBR geometry on the linewidth of the lasers is explored. The results give useful information related to the design and fabrication of such DBR lasers.展开更多
比较和分析了使用1.25Gb/s,2.5Gb/s and 5Gb/s的曼彻斯特编码和NRZ编码下行信号,1.25Gb/s NRZ编码上行信号的基于反射式半导体光放大器(RSOA)的波长重用波分复用无源光网络(WDM-PON)系统的性能。实验结果表明,相对于NRZ调制格式,曼彻斯...比较和分析了使用1.25Gb/s,2.5Gb/s and 5Gb/s的曼彻斯特编码和NRZ编码下行信号,1.25Gb/s NRZ编码上行信号的基于反射式半导体光放大器(RSOA)的波长重用波分复用无源光网络(WDM-PON)系统的性能。实验结果表明,相对于NRZ调制格式,曼彻斯特编码可获得更好的功率余量,尤其是在上下行信号速率非对称的网络中,曼彻斯特编码具有更加明显的优越性。展开更多
文摘A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 3 05ps at 1 044μm.The pulse frequency is 375MHz;the output power is 45mW.
文摘The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of the size of the DBR on its coupling coefficient and reflectivity,and hence on the linewidth of the laser diodes. The linewidths were measured by employing a self heterodyne linewidth measurement system. The experimental and calculated data for DBR reflectivity and spectral linewidth are given. The relationship between these data and the dimensions of the DBR is analyzed. Based on this analysis,the effect of the DBR geometry on the linewidth of the lasers is explored. The results give useful information related to the design and fabrication of such DBR lasers.
文摘比较和分析了使用1.25Gb/s,2.5Gb/s and 5Gb/s的曼彻斯特编码和NRZ编码下行信号,1.25Gb/s NRZ编码上行信号的基于反射式半导体光放大器(RSOA)的波长重用波分复用无源光网络(WDM-PON)系统的性能。实验结果表明,相对于NRZ调制格式,曼彻斯特编码可获得更好的功率余量,尤其是在上下行信号速率非对称的网络中,曼彻斯特编码具有更加明显的优越性。
