A p-type AlAs(70.2 nm)/16.5 period [GaAs(3 nm)/AlAs(0.7 nm)] semiconductor/superlatice distributed Bragg reflector (DBR) has been grown on n +-GaAs(100) substrate by V80H molecular beam epitaxy system. Experimental re...A p-type AlAs(70.2 nm)/16.5 period [GaAs(3 nm)/AlAs(0.7 nm)] semiconductor/superlatice distributed Bragg reflector (DBR) has been grown on n +-GaAs(100) substrate by V80H molecular beam epitaxy system. Experimental reflection spectrum shows that its central wavelength is 820 nm, with the peak reflectivity for 10-pair DBR of as high as 96 %, and the reflection bandwidth of as wide as 90 nm. We formed a 20×20 μm 2 square mesa to measure the series resistance using wet chemical etching. From the measurement result, the series resistance of about 50 Ω is obtained at a moderate doping (3×10 18 cm -3 ). Finally, the dependence of the resistance of the DBR on the temperature is analyzed. From the experimental result, it is found that the mechanism of the low series resistance of this kind of DBR may increase the tunneling current in the semiconductor/superlattice mirror structure, which will result in a decrease in series resistance.展开更多
Porous silicon microcavities (PSM) optical crystals consisting of a Fabry-Perot microcavity embedded between two distributed Bragg reflectors have been fabricated by electrochemical etching. Scanning electron microsco...Porous silicon microcavities (PSM) optical crystals consisting of a Fabry-Perot microcavity embedded between two distributed Bragg reflectors have been fabricated by electrochemical etching. Scanning electron microscopy (SEM) clearly depicted their physical sandwich construction. The optical feature of the PSM structure was tuned by varying the anodization parameters. Through proper thermal oxidation and surface chemical modifications, the resulting structures were employed as optical sensors for the detection of environmental pollutants including volatile organic vapors (i.e. acetonitrile, toluene, cyclohexane, chloroform, acetone and ethanol) and interior decoration gases (i.e. toluene, ammonia and formaldehyde). Fourier transform infrared spectroscopy (FTIR) spectra confirmed the effective thermal annealing and surface modification chemistry, and the sensing process was accompanied by recording the modified structures' optical responses when exposed to target analytes. The PSM optical sensors showed good stability, sensitivity and selectivity, implying promising applications in gas sensing and en- vironmental monitoring.展开更多
文摘A p-type AlAs(70.2 nm)/16.5 period [GaAs(3 nm)/AlAs(0.7 nm)] semiconductor/superlatice distributed Bragg reflector (DBR) has been grown on n +-GaAs(100) substrate by V80H molecular beam epitaxy system. Experimental reflection spectrum shows that its central wavelength is 820 nm, with the peak reflectivity for 10-pair DBR of as high as 96 %, and the reflection bandwidth of as wide as 90 nm. We formed a 20×20 μm 2 square mesa to measure the series resistance using wet chemical etching. From the measurement result, the series resistance of about 50 Ω is obtained at a moderate doping (3×10 18 cm -3 ). Finally, the dependence of the resistance of the DBR on the temperature is analyzed. From the experimental result, it is found that the mechanism of the low series resistance of this kind of DBR may increase the tunneling current in the semiconductor/superlattice mirror structure, which will result in a decrease in series resistance.
基金supported by the National Natural Science Foundation of China (20875062 & 81071249)Shenzhen Science and Technology Pro-jects (SY200806300225A)the "Hundred Talents Program" of Chinese Academy of Sciences
文摘Porous silicon microcavities (PSM) optical crystals consisting of a Fabry-Perot microcavity embedded between two distributed Bragg reflectors have been fabricated by electrochemical etching. Scanning electron microscopy (SEM) clearly depicted their physical sandwich construction. The optical feature of the PSM structure was tuned by varying the anodization parameters. Through proper thermal oxidation and surface chemical modifications, the resulting structures were employed as optical sensors for the detection of environmental pollutants including volatile organic vapors (i.e. acetonitrile, toluene, cyclohexane, chloroform, acetone and ethanol) and interior decoration gases (i.e. toluene, ammonia and formaldehyde). Fourier transform infrared spectroscopy (FTIR) spectra confirmed the effective thermal annealing and surface modification chemistry, and the sensing process was accompanied by recording the modified structures' optical responses when exposed to target analytes. The PSM optical sensors showed good stability, sensitivity and selectivity, implying promising applications in gas sensing and en- vironmental monitoring.
