A novel optical device of a bulk glass Faraday current sensor is presented,which has a accuracy of 0. 5 in the current region of 1 000- 8 000 A and over a temperature range from-30℃ to + 40℃. The new sensing device ...A novel optical device of a bulk glass Faraday current sensor is presented,which has a accuracy of 0. 5 in the current region of 1 000- 8 000 A and over a temperature range from-30℃ to + 40℃. The new sensing device can compensate the phase difference between p and s components of the incident light caused by total internal reflections in a glass. The self-correction, auto-correlation and auto-amplification techniques are used in the signal treatment with the help of a computer.展开更多
A GaN-based light-emitting diode (LED) with reflective current blocking layer (CBL) underneath p-electrode pad and backside hybrid reflector was fabricated and investigated. With a 20 mA injection current, the LED wit...A GaN-based light-emitting diode (LED) with reflective current blocking layer (CBL) underneath p-electrode pad and backside hybrid reflector was fabricated and investigated. With a 20 mA injection current, the LED with SiO2 /ITO/Al reflective CBL deposited on naturally textured p-InGaN/p-GaN surface exhibited a light output power that was 7.6% and 18.5% higher than those of the textured LEDs with SiO2 CBL and without SiO2 CBL, respectively. The LED with backside hybrid reflector exhibited a light output power that was 30% higher than that of LED without the hybrid reflector. The enhancement in light output power is attributed to the improved current spreading performance via the SiO2 CBL, the Al omnidirectional metal reflector to prevent the light absorption by the opaque p-electrode pad, and the backside hybrid reflector to extract bottom-emitting light.展开更多
The proton implantation is one of key procedures to confine the current diffusion in vertical cavity surface emitting lasers(VCSELs),in which the proton implanted depth and profile are main parameters.Threshold charac...The proton implantation is one of key procedures to confine the current diffusion in vertical cavity surface emitting lasers(VCSELs),in which the proton implanted depth and profile are main parameters.Threshold characteristics of VCSELs with various proton implanted depths are studied after optical,electrical and thermal fields have been simulated self-consistently in three dimensions.It is found that for VCSELs with confinement radius of 2 mm,increasing proton implanted depth can reduce the injected current threshold power and enhance the laser temperature in active region.Numerical results also indicate that there are optimal values for current aperture in proton implanted VCSELs.The minimum injected current threshold can be achieved in VCSELs with proton implantation near the active region and confinement radius of 1.5 mm,while the VCSELs with proton implantation in the middle of p-type distributed Bragg reflectors(DBRs) and confinement radius of 2.5 mm can realize the minimum temperature.展开更多
We reported here the fabrication of the elec- trically tunable infrared （IR） reflectors based on the polymer stabilized cholesteric liquid crystal （PSCLC） with negative dielectric anisotropy. A systematic study of...We reported here the fabrication of the elec- trically tunable infrared （IR） reflectors based on the polymer stabilized cholesteric liquid crystal （PSCLC） with negative dielectric anisotropy. A systematic study of the influence of cell gap on the electrically tunable reflection bandwidth was performed. When a direct current （DC） electric field was ap- plied, the reflection bandwidth red shifted in the cells with small cell gap, whereas the bandwidth broadening was ob- served in the cells with large cell gap. It is therefore reasonable to deduct that the reflection is dictated by the pitch gradient steepness which strongly relies on the cell thickness. The re- sults reveal that for making PSCLC based IR reflector windows with electrically induced bandwidth broadening, a minimal cell gap thickness is required. The resulted IR reflectors pos- sess a short native switching time and long-term operation stability, and are potentially applicable as smart energy saving windows in buildings and automobiles.展开更多
The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. ...The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. Through optimizing the process parameters,an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films,the resistivity of the ZAO film is as low as 4.5×10-4 Ω·cm and the average transmissivity in the visible region is around 80%,the optical and electrical properties meet the application requirements.展开更多
文摘A novel optical device of a bulk glass Faraday current sensor is presented,which has a accuracy of 0. 5 in the current region of 1 000- 8 000 A and over a temperature range from-30℃ to + 40℃. The new sensing device can compensate the phase difference between p and s components of the incident light caused by total internal reflections in a glass. The self-correction, auto-correlation and auto-amplification techniques are used in the signal treatment with the help of a computer.
基金supported by the Postdoctoral Science Foundation of Shanghai (Grant No. 12R21413900)the National Basic Research Project of China ("973" Project) (Grant No. 2011CB013103)
文摘A GaN-based light-emitting diode (LED) with reflective current blocking layer (CBL) underneath p-electrode pad and backside hybrid reflector was fabricated and investigated. With a 20 mA injection current, the LED with SiO2 /ITO/Al reflective CBL deposited on naturally textured p-InGaN/p-GaN surface exhibited a light output power that was 7.6% and 18.5% higher than those of the textured LEDs with SiO2 CBL and without SiO2 CBL, respectively. The LED with backside hybrid reflector exhibited a light output power that was 30% higher than that of LED without the hybrid reflector. The enhancement in light output power is attributed to the improved current spreading performance via the SiO2 CBL, the Al omnidirectional metal reflector to prevent the light absorption by the opaque p-electrode pad, and the backside hybrid reflector to extract bottom-emitting light.
基金supported by the Natural Science Foundation of Hebei Province (No.F2007000096)the Research Foundation for the Doctoral Program of Higher Education of China (No.20070080001)
文摘The proton implantation is one of key procedures to confine the current diffusion in vertical cavity surface emitting lasers(VCSELs),in which the proton implanted depth and profile are main parameters.Threshold characteristics of VCSELs with various proton implanted depths are studied after optical,electrical and thermal fields have been simulated self-consistently in three dimensions.It is found that for VCSELs with confinement radius of 2 mm,increasing proton implanted depth can reduce the injected current threshold power and enhance the laser temperature in active region.Numerical results also indicate that there are optimal values for current aperture in proton implanted VCSELs.The minimum injected current threshold can be achieved in VCSELs with proton implantation near the active region and confinement radius of 1.5 mm,while the VCSELs with proton implantation in the middle of p-type distributed Bragg reflectors(DBRs) and confinement radius of 2.5 mm can realize the minimum temperature.
基金supported by the National Natural Science Foundation of China (51503070, 51561135014, U1501244)Guangdong Innovative Research Team Program (2013C102)+3 种基金Science and technology project of Guangdong Province (2015B090913004, 2016B090909001)Science and technology Project of Shenzhen (JSGG201704143009027)Guangdong Provincial Key Laboratory of Optical Information Materials and Technology (2017B030301007)the 111 Project
文摘We reported here the fabrication of the elec- trically tunable infrared （IR） reflectors based on the polymer stabilized cholesteric liquid crystal （PSCLC） with negative dielectric anisotropy. A systematic study of the influence of cell gap on the electrically tunable reflection bandwidth was performed. When a direct current （DC） electric field was ap- plied, the reflection bandwidth red shifted in the cells with small cell gap, whereas the bandwidth broadening was ob- served in the cells with large cell gap. It is therefore reasonable to deduct that the reflection is dictated by the pitch gradient steepness which strongly relies on the cell thickness. The re- sults reveal that for making PSCLC based IR reflector windows with electrically induced bandwidth broadening, a minimal cell gap thickness is required. The resulted IR reflectors pos- sess a short native switching time and long-term operation stability, and are potentially applicable as smart energy saving windows in buildings and automobiles.
文摘The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. Through optimizing the process parameters,an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films,the resistivity of the ZAO film is as low as 4.5×10-4 Ω·cm and the average transmissivity in the visible region is around 80%,the optical and electrical properties meet the application requirements.
