Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect...Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly （002） oriented, and have an average transmittance -85 % in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13. 8 Ω· cm with the carrier concentration as high as 1.07 × 10^18 em^-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.展开更多
There is a gr eat interest in obtaining epitaxial α″ nitride phase of iron because of their special ferromagnetic properties. α″ Fe 16 N 2 thin films have been prep ared by facing target sputtering (FTS) onto NaCl...There is a gr eat interest in obtaining epitaxial α″ nitride phase of iron because of their special ferromagnetic properties. α″ Fe 16 N 2 thin films have been prep ared by facing target sputtering (FTS) onto NaCl (001) substrates in a mixture of argon(Ar) and N 2 gases. The base pressure was 6×10 -5 Pa. During sput tering, the partial pressures of Ar and N 2 gases were kept constant at 0.3 Pa and 0.05 Pa respectively. The deposition rate was about 0.2 nm/s. The substrate temperature was held at about 100 ℃. Annealing of the films was sequentially ca rried out at 150 ℃ for 1 h in vacuum ( at least 10 -4 Pa ) to obtain α″ phase. Transmission electron microscope (TEM) observations and X ray diffract ion (XRD) patterns showed that the α″ Fe 16 N 2 epitaxially grew on the NaCl substrates. It was found that the arrangement of the SAD patterns exhibits perfect symmetries.By using super lattice reflections, the lattice constants a=b=(5.71±0.02)×10 -1 nm and c=(6.30±0.04) ×10 -1 nm of the α″ phase with a body centered tetragonal (BCT) structu re were determined, which was very close to the results obtained by Jack (a=b= 5.72×10 -1 nm, c= 6.29×10 -1 nm). The X ray diffraction patterns and the selected area diffraction patterns showed t hat α″ Fe 16 N 2 epitaxially grew on the NaCl (001) substrate with orien tation relationships α″ Fe 16 N 2 (001) ‖NaCl (001),α″ Fe 16 N 2 ‖NaCl .展开更多
基金Natural Science Foundation (60576063)Science and Technology Project of Zhejiang province(2008F70015)
文摘Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly （002） oriented, and have an average transmittance -85 % in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13. 8 Ω· cm with the carrier concentration as high as 1.07 × 10^18 em^-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.
文摘There is a gr eat interest in obtaining epitaxial α″ nitride phase of iron because of their special ferromagnetic properties. α″ Fe 16 N 2 thin films have been prep ared by facing target sputtering (FTS) onto NaCl (001) substrates in a mixture of argon(Ar) and N 2 gases. The base pressure was 6×10 -5 Pa. During sput tering, the partial pressures of Ar and N 2 gases were kept constant at 0.3 Pa and 0.05 Pa respectively. The deposition rate was about 0.2 nm/s. The substrate temperature was held at about 100 ℃. Annealing of the films was sequentially ca rried out at 150 ℃ for 1 h in vacuum ( at least 10 -4 Pa ) to obtain α″ phase. Transmission electron microscope (TEM) observations and X ray diffract ion (XRD) patterns showed that the α″ Fe 16 N 2 epitaxially grew on the NaCl substrates. It was found that the arrangement of the SAD patterns exhibits perfect symmetries.By using super lattice reflections, the lattice constants a=b=(5.71±0.02)×10 -1 nm and c=(6.30±0.04) ×10 -1 nm of the α″ phase with a body centered tetragonal (BCT) structu re were determined, which was very close to the results obtained by Jack (a=b= 5.72×10 -1 nm, c= 6.29×10 -1 nm). The X ray diffraction patterns and the selected area diffraction patterns showed t hat α″ Fe 16 N 2 epitaxially grew on the NaCl (001) substrate with orien tation relationships α″ Fe 16 N 2 (001) ‖NaCl (001),α″ Fe 16 N 2 ‖NaCl .
