反溅射再淀积现象研究

本文对经反溅射（Sputter-etch）处理的Al片，进行SEM剖面观察，发现了反溅射的再淀积现象，对再淀积现象做了对比实验。

反溅射再淀积现象的探讨

本文通过对不同条件下双层金属通孔电阻的测试，验证了反溅射再淀积现象的存在，并通过对比实验，分析了影响再淀积的因素和其对电路可靠性的影响。

平面靶直流溅射制备YBCO高温超导薄膜研究

开展了平面靶溅射法制备YBa2Cu3O7-δ(YBCO)高温超导薄膜工艺研究,以达到提高沉积速率的目的。通过增加工作气体总压(Pt),采用基片旋转达到离轴溅射模式,有效地克服了传统平面靶直流溅射法中高能粒子轰击和负离子反溅射现象。在两英寸LaA lO3(LAO)基片上成功外延生长得到了微观结构良好、电学性能优越(临界电流密度Jc=2.3/2.0mA/cm2)的双面YBCO高温超导薄膜。

Ge_xC_(1-x)薄膜在红外增透保护膜系设计和制备中的应用

用磁控反应溅射 (RS)法制备出 Gex C1 - x薄膜 ,它的折射率可在 1 .6～ 4.0之间变化 .设计出不同厚度的 Gex C1 - x均匀增透膜系和非均匀增透膜系 ,并在 Zn S基片上制备出 Gex C1 - x均匀增透膜系 .设计结果表明 ,均匀膜系能实现某一波段范围内增透 ,非均匀膜系能实现宽波段增透 ;当厚度增加时 ,均匀增透膜系的透过率曲线变得急剧振荡 ,非均匀膜系的透过率曲线变得更为平滑 ,且向长波段扩展 .实验结果表明 ,在 8～ 1 1 .5 μm波段 ,Zn S基片双面镀 Gex C1 - x均匀增透膜系后平均透过率为 90 .4% ,比未镀膜的 Zn S基片 (平均透过率为 73.9% )净增加 1 6 .5 % .

Effects of sputtering pressure on nanostructure and nanomechanical properties of AlN films prepared by RF reactive sputtering

Wurtzite aluminum nitride（AlN） films were deposited on Si（100） wafers under various sputtering pressures by radio-frequency（RF） reactive magnetron sputtering. The film properties were investigated by XRD, SEM, AFM, XPS and nanoindenter techniques. It is suggested from the XRD patterns that highly c-axis oriented films grow preferentially at low pressures and the growth of（100） planes are preferred at higher pressures. The SEM and AFM images both reveal that the deposition rate and the surface roughness decrease while the average grain size increases with increasing the sputtering pressure. XPS results show that lowering the sputtering pressure is a useful way to minimize the incorporation of oxygen atoms into the AlN films and hence a film with closer stoichiometric composition is obtained. From the measurement of nanomechanical properties of AlN thin films, the largest hardness and elastic modulus are obtained at 0.30 Pa.

双层布线技术研究

随着集成电路技术的发展,双层布线技术显得越来越重要。主要对双层布线中二次金属淀积前的通孔预处理技术进行了研究和探索,通过对反溅射时间、反溅射功率等不同工艺参数的对比实验,给出了最优的反溅射清洗工艺条件。

Monte Carlo simulation for the sputtering yield of Si_3N_4 thin film milled by focused ion beams

The sputtering yield of the Si3N4 thin film is calculated by Monte Carlo method with different parameters. The dependences of the sputtering yield on the incident ion energy, the incident angle and the number of Gallium （Ga） and Arsenic （As） ions are predicted. The abnormal sputtering yield for As at 90 keV occurs when the incident angle reaches the range between 82° and 84°.

Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering

Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facingtarget sputtering system. Lead zirconate titanate（PZT） thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency （RF） magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34..357 rim, 2. 479 nm and 1. 954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.5. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10μC/cm^2 and 13μC/cm^2 respectively.

Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering

Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly （002） oriented, and have an average transmittance -85 % in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13. 8 Ω· cm with the carrier concentration as high as 1.07 × 10^18 em^-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.

Laser Ablation Atomic Beam Apparatus with Time-Sliced Velocity Map Imaging for Studying State-to-State Metal Reaction Dynamics

We report a newly constructed laser ablation crossed molecular beam apparatus, equipped with time-sliced velocity map imaging technique, to study state-to-state metal atom reaction dynamics. Supersonic metal atomic beam is generated by laser vaporization of metal rod, and free expansion design without gas flow channel has been employed to obtain a good quality of metal atomic beam. We have chosen the crossed-beam reaction Al＋O2 to test the performance of the new apparatus. Two-rotational-states selected AIO（X^2∑＋, v=0, N and N＋I4） products can be imaged via P（N） and R（N＋14） branches of the Av=l band at the same wavelength, during （1＋1） resonance-enhanced multi-photon ionization through the AIO（D2E＋） intermediate state. In our experiment at 244.145 nm for simultaneous transitions of P（15） and R（29） branch, two rings in slice image were clearly distinguishable, corresponding to the AiO（v=0, N=IS） and AIO（v=0, N=29） states respectively. The energy difference between the two rotational levels is 403 cm^-1. The success of two states resolved in our apparatus suggests a better collisional energy resolution compared with the recent research study [J. Chem. Phys. 140, 214304 （2014）].

Polycrystalline ZnO Films Deposited on Glass by RF Reactive Sputtering

Polycrystalline ZnO films were prepared on glass wafer using Zn targets by radio frequency(RF)reactive sputtering technique under different deposition conditions.X-ray diffraction (XRD) and optical transmittance spectrum were employed to analyze the structure and optical character of the films.The strain and stress in films, as well as the packing density are calculated in terms of refractive index of films measured with an elliptic polarization analyzer.It is the deposition conditions that have great effects on the structural and optical properties of ZnO films.Under the optimal conditions,the only evident peak in XRD spectrum was (002) peak with the full width at half maximum (FWHM) of 0.20° showing the grain size of 42.8 nm.The packing density,the stress in (002) plane and the average optical transmittance in the visible region were about 97%,-1.06×10~9 N/m^2 and 92%, respectively.

Epitaxial α″-Fe_(16)N_2 Films Grown on NaCl (001) by Facing Target Sputtering

There is a gr eat interest in obtaining epitaxial α″ nitride phase of iron because of their special ferromagnetic properties. α″ Fe 16 N 2 thin films have been prep ared by facing target sputtering (FTS) onto NaCl (001) substrates in a mixture of argon(Ar) and N 2 gases. The base pressure was 6×10 -5 Pa. During sput tering, the partial pressures of Ar and N 2 gases were kept constant at 0.3 Pa and 0.05 Pa respectively. The deposition rate was about 0.2 nm/s. The substrate temperature was held at about 100 ℃. Annealing of the films was sequentially ca rried out at 150 ℃ for 1 h in vacuum ( at least 10 -4 Pa ) to obtain α″ phase. Transmission electron microscope (TEM) observations and X ray diffract ion (XRD) patterns showed that the α″ Fe 16 N 2 epitaxially grew on the NaCl substrates. It was found that the arrangement of the SAD patterns exhibits perfect symmetries.By using super lattice reflections, the lattice constants a=b=(5.71±0.02)×10 -1 nm and c=(6.30±0.04) ×10 -1 nm of the α″ phase with a body centered tetragonal (BCT) structu re were determined, which was very close to the results obtained by Jack (a=b= 5.72×10 -1 nm, c= 6.29×10 -1 nm). The X ray diffraction patterns and the selected area diffraction patterns showed t hat α″ Fe 16 N 2 epitaxially grew on the NaCl (001) substrate with orien tation relationships α″ Fe 16 N 2 (001) ‖NaCl (001),α″ Fe 16 N 2 ‖NaCl .

Fabrication and Characterization of VO_2 Thin Films by Direct Current Facing Targets Magnetron Sputtering and Low Temperature Oxidation

Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.

Microstructure and optical properties of TiO_2 thin films deposited at different oxygen flow rates

To research the influence of oxygen flow rate on the structural and optical properties of TiO2 thin film,TiO2 films on glass were deposited by reactive magnetron sputtering.The microstructure and optical properties were measured by X-ray diffractometry,AFM and UV-VIS transmittance spectroscopy,respectively.The results show that the films deposited at oxygen flow rate of 10 mL/min has the lowest roughness and the highest transmittance.The absorption angle shifts to longer wavelengths as oxygen flow rates increase from 5 to 10 mL/min,then to shorter ones as the oxygen flow rate increase from 10 to 30 mL/min.The band gap is 3.38 eV,which is nearly constant in the experiment.For the TiO2 thin films deposited at 10 mL/min of oxyge flow rate,there are nano-crystalline structures,which are suitable for anti-reflection(AR) coating in the solar cells structure system.

Imaging Reaction Dynamics of Y+SO2

The reaction dynamics of yttrium atoms with sulfur dioxide molecules at a high collision energy of 36 kcal/mol was studied using time-sliced velocity map ion imaging,crossed molecular beam and laser-ablation method.The product YO was detected via multiphoton ionization at various wavelengths in the region of 482-615 nm.The slice images of YO show a broad velocity distribution and forward-backward peaking angular distribution.The forward scattering signal is stronger than its backward distribution.This indicates that the reaction proceeds via an intermediate complex and the lifetime of the intermediate state is less than one rotational period.The formation of complex suggests that electron transfer occurs in the oxidation reaction.

Advanced Techniques for Quantum-State Specific Reaction Dynamics of Gas Phase Metal Atoms

One of the themes of modern molecular reac tion dynamics is to charac terize elementary chemical reactions from“quan tum state to quan tum stat e”,and the study of molecular reaction dynamics in excited states can help test the validi ty of modern chemical t heories and provide met hods to cont rol chemical reactions.The subject of this review is to describe the recent experimental techniques used to study the reaction dynamics of metal atoms in the gas phase.Through these techniques,information such as the internal energy distribution and angular distribution of the nascent products or the three-dimensional stereodynamic reactivity can be obtained.In addition,by preparing metal at oms wi th specific exci ted elec tronic states or orbi tal arrangemen ts,information about the reactivity of the electronic states enriches the relevant understanding of the electron transfer mechanism in metal reaction dynamics.

Analysis on the process of ZAO films by DC magnetron reactive sputtering

The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. Through optimizing the process parameters,an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films,the resistivity of the ZAO film is as low as 4.5×10-4 Ω·cm and the average transmissivity in the visible region is around 80%,the optical and electrical properties meet the application requirements.

The effect of working gas pressure and deposition power on the properties of molybdenum films deposited by DC magnetron sputtering

Molybdenum films were deposited on Corning 7059 glass substrates by DC magnetron sputtering with different working gas pressures and sputtering powers.The structure and morphology,residual stress and adhesion,resistivity and optical reflectance of the as-deposited Mo films were investigated.The results show that Mo films deposited with high working gas pressure and low sputtering power have a spherical surface morphology,small grain size,residual compressive stress and a good adhesion,high resistivity and low optical reflectance.With the working gas pressure decreased and the sputtering power increased,Mo films have elongated spindle-shape or diamond flake shape surface morphology,the grain size is increased,with residual stress changed from tensile to compressive,a poor adhesion,resistivity decreased and optical reflectance increased.

Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering

Aluminum nitride （AlN） thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency （RF） reactive magnetron sputtering. Based on the analysis of Berg＇s hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential （002） orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction （XRD） analysis, the full width at half maximum （FWHM） of AlN （002） was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN.

Crystalline Structure and Surface Morphology of Tin Oxide Films Grown by DC Reactive Sputtering

Tin oxide thin films were deposited by direct current （DC） reactive sputtering at gas pressures of 0.015 mbar - 0.15 mbar. The crystalline structure and surface morphology of the prepared SnO2 films were introduced by X-ray diffraction （XRD） and atomic force microscopy （AFM）. These films showed preferred orientation in the （110） plane. Due to AFM micrographs, the grain size increased non-uniformly as the working gas pressure increased.