聚3,4-乙烯二氧噻吩聚苯乙烯磺酸复合LB膜对有机电致发光器件性能的优化

采用Langmuir-Blodgett(LB)膜诱导沉积法制备聚3,4-乙烯二氧噻吩高度有序导电聚合物复合薄膜,研究了薄膜的导电性能并进一步研究薄膜在改善器件性能方面的作用。将其应用于有机电致发光二极的空穴缓冲层,将聚3,4-乙烯二氧噻吩聚苯乙烯磺酸复合LB膜沉积于铟锡氧化物(ITO)电极上,制备了以复合LB膜为空穴缓冲层的有机电致发光二极。发现复合LB膜改善了器件性能(启动电压降低、最大亮度增加),但进一步的研究表明,LB膜器件在一定时间后出现性能劣化,X射线反射率(XRR)分析表明薄膜的结构发生一定程度的改变,是导致器件性能变差的可能原因。

Growth Control of Quasi-two-dimensional Perovskites:Structure-dependent Exciton and Charge Behavior

While three-dimensional perovskites have high defect tolerance and an adjustable bandgap,their charges tend to be free rather than forming excitons,making them unsuitable for use in efficient light-emitting diodes(LEDs).Rather,quasi-two-dimensional(Q-2D)perovskites offer high photoluminescence quantum yield along with the advantages of bulk perovskites,making them ideal for high-performance LEDs.In Q-2D perovskites,the structure(which includes factors like crystal orientation,phase distribution,and layer thickness)directly influences how excitons and charge carriers behave within the material.Growth control techniques,such as varying the synthesis conditions or employing methods,allow for fine-tuning the structural characteristics of these materials,which in turn affect exciton dynamics and charge transport.This review starts with a description of the basic properties of Q-2D perovskites,examines crystal growth in solution,explains how structure affects energy transfer behavior,and concludes with future directions for Q-2D perovskite LEDs.By understanding and optimizing the structure-dependent behavior,researchers can better control exciton dynamics and charge transport,which are crucial for enhancing the performance of optoelectronic devices like solar cells and LEDs.

Synthesis,crystal structure and photo-physical properties of tris(4-methyl-2,5-diphenylpyridine)iridium for OLED

Organic light-emitting diodes(OLEDs)have important applications in the field of next-generation displays and lighting,and phosphorescent iridium complexes are an important class of electroluminescent phosphorescent materials.In this paper,Ir(bmppy)_(3),tris(4-methyl-2,5-diphenylpyridine)iridium,was synthesized and elvaluted for photo-physical characteristics.Single crystals suitale for X-ray diffraction(XRD)were grown from a mixture solvent of dichloromethane and absolute ethanol.The composition and structur of Ir(bmppy)_(3)were determined by element analysis,NMR spectra and XRD.The complex crystallizes in the monoclinic symmetry with the space group P21/c with a slightly distorted octahedral configuration.As measured by UV-Visible and photoluminescence spectra,Ir(bmppy)_(3) displays a maximum emission at at 527 nm at ambient temperature,a typical green-emitting profile.The complex has potential for application in the OLED industry.

Fabrication and testing of phase change heat sink for high power LED

A novel phase change heat sink was fabricated for packaging cooling of high power light emitting diode （LED）. 3D structures as enhanced boiling structure in the evaporation surface were composed of a spiral micro-groove along circumferential direction and radial micro-grooves which were processed by ploughing-extrusion （P-E） and stamping, respectively. Meanwhile, the cycle power of refrigerant was supplied by wick of sintered copper powder on internal surface of phase change heat sink. Operational characteristics were tested under different heat loads and refrigerants. The experimental results show that phase change heat sink is provided with a good heat transfer capability and the temperature of phase change heat sink reaches 86.8 ℃ under input power of 10 W LED at ambient temperature of 20 ℃.

AMOLED亮点不良修复方法

为了提高有源矩阵有机发光二极管面板(AMOLED)亮点不良修复成功率,优化设备性能,本文研究一种AMOLED亮点修复方法,实现阴极隔离原理。由装置激光调形机构(Slit)的激光修复设备构造一束固定形状和频率的脉冲激光束。该激光束透过AMOLED面板封装层,照射目标亚像素上方阴极膜层,使目标亚像素发光层与面板整体阴极隔断,阴极电子无法迁移至目标亚像素发光层,目标亚像素由亮点变为暗点,达到亮点修复目的。提出并比较了矩形修复法与线修复法,结果表明矩形修复方法成功率为33.5%,容易出现封装层损伤,信赖性风险高;线修复方法成功率为100%,无封装层损伤风险,信赖性风险低。将线修复方法导入量产后,亮点不良修复良率由96.9%提升至100%。

Design for SOP AMOLED display panel

A novel full color SOP（system on panel） AMOLED display based on the MIUC polycrystalline silicon TFT technique, and a new control circuit for the panel, which can deal with both VGA and DVI input signals have been developed. To realize gray-scale a sub-frame technique has been designed and im- plemented by FPGA device, in which an 120 module has been inserted. Through actual circuit, the whole design has been proven and the advantages of the SOP AMOLED display panel have been confirmed.

Experimental study of negative capacitance in LEDs

The experimental study on negative capacitance（NO） of various light-emitting diodes（LEDs） is presented. Experimental result shows that all LEDs display the NO phenomenon. The voltage modulated electroluminescence（VMEL） experiment confirms that the reason of negative capacitance is the strong recombination of the injected carriers in the active region of luminescence. The measures also verify that the dependence of NO on voltage and frequency in different LEDs is similar. NO phenomenon is more obvious with higher voltage or lower frequency.

Tunnel Junction AlGaInP Light Emitting Diode

The n type GaAs substrates are used and their conductive type is changed to p type by tunnel junction for AlGaInP light emitting diodes(TJ LED),then n type GaP layer is used as current spreading layer.Because resistivity of the n type GaP is lower than that of p type,the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n type GaP current spreading layer.For TJ LED with 3μm n type GaP current spreading layer,experimental results show that compared with conventional LED with p type GaP current spreading layer,light output power is increased for 50% at 20mA and for 66 7% at 100mA.

A 64-Step Gray Scale Driver Chip for a 132×64-Pixel Passive Matrix OLED

A mixed-signal driver chip for a 132 × 64-pixel passive matrix OLED panel is presented. The chip has a 64-step gray scale control using the PWM method and two-step voltage pre-charge technology to pre-charge the OLED pixels. It consists of a digital controller,SRAM for display data memory,a DC-DC voltage converter,reference current generators,a pre-charge voltage generator,64 common drivers, and 132 segment drivers. The single chip is a typical current-drive circuit. It has been implemented in a Chartered 0.35/μm 18V HV （DDD） CMOS process with a die area of 10mm× 2mm. Test results show that the power consumption of the whole chip and all pixels with a constant driving current of 100μA while displaying the highest gray scale is 294mW with a 12V high voltage supply and a 3V low voltage supply.

Mechanism of negative capacitance in LEDs

In order to explain the phenomenon of negative capacitance（NC） in light emitting diodes LEDs, we present a new model based on local strong recombination in active region and firstly deduce the analytic expression of NO from continuity equation. The theoretical result indicates that the NC effect becomes stronger when the carrier recombination rate increases in a certain range,which is consistent with the experimental result. Accordingly,we confirm that the NO is caused by carrier recombination in active reaion instead of by other exterior factors.

Differences of silicon photodiode spectral reflectance among the same batch

Photodiode＇s reflectance plays an important role regarding the relation between responsivity and the incident flux. In this work we analyze how the spectral reflectance changes among photodiodes from the same manufacturer and batch and how the reflectance of three standard photodiodes has drifted during six years. The results show that the reflectance changes from diode to diode within the same batch and also show that the reflectance ofphotodiodes changes on time. This ageing is spectraUy dependent.

Wide reflected angle DBR red light LED

The coupled DBR LED with one DBR for reflecting normal incidence light and the other for reflecting inclined incidence light has been grown by MOCVD. For improving the conventional DBR which was used to increase light extraction efficiency in AIG-alnP red light LED is analyzed. At 20 mADc injection current, the LED peak wave length is 630 nm, and the light intensity of on axis is 137 mcd. The output light power is 2.32 mW. The light intensity and output light power have been improved compared with the conventional LEDs.

Fabrication and Emission Properties of a n-ZnO/p-GaN Heterojunction Light-Emitting Diode

We report the fabrication and characterization of light-emitting diodes based on n-ZnO/p-GaN heterojunctions. The n-type ZnO epilayer is deposited by metalorganic chemical vapor deposition （MOCVD） on a MOCVD grown Mg-doped p-GaN layer to form a p-n heterojunction. During the etching process, the relation between the etching depth and the etching time is linear in a HF and NH4 CI solution of a certain ratio. The etching rates of the SiO2 and ZnO are well controlled,which are essential for device fabrication. The current-voltage relationship of this heterojunction shows a diode-like rectifying behavior. In contrast to previous reports,electroluminescence （EL） emissions are observed by the naked eye at room temperature from the n-ZnO/p-GaN heterojunction under forward-and reverse-bias. The origins of these EL emissions are discussed in comparison with the pho- toluminescence spectra.

Review of Ultraviolet Non-Line-of-Sight Communication

With rapid advances of solar blind ultraviolet LED and ultraviolet detecting technology in recent years, ultraviolet communication gradually becomes a research hotspot due to its inherent advantages: low solar background noise, non-line-of-sight(NLOS) and good secrecy. The strong scattering characteristics in atmospheric render ultraviolet waveband the ideal choice for achieving NLOS optical communication. This paper reviews the research history and status of ultraviolet communication both in China and abroad, and especially introduces three main issues of ultraviolet communication: channel model, system analysis and design, light sources and detectors. For each aspect, current open issues and prospective research directions are analyzed.

VEGFR-3 ligand-binding and kinase activity are required for lymphangiogenesis but not for angiogenesis

Although VEGFR-3 deficiency disrupts blood vascular development during early embryogenesis, the underlying mechanism was not clear. To characterize its function in angiogenesis and lymphangiogenesis, we employed two genetically modified mouse models in this study, targeting the coding region for the ligand-binding domain （Vegfr△LBD） or the tyrosine kinase domain with an inactivation point mutation （Vegfr3^TKmat）. We show that lymphatic growth was disrupted in Vegfr3△LBD/△LBD and Vegfr3^TKmut3^TKmat mice, but blood vessels developed normally in both embryo and yolk sac. Interestingly, in Vegfr3△LBD/△LBD but not Vegfr3^TKmut3^TKmat mice, lymph sac was present but there was lack of iym- phangiogenic sprouting. We further demonstrate that both the wild-type and mutant forms of VEGFR-3 could form heterodimers with VEGFR-2, and decreased the level of phospho-VEGFR-2 and the downstream phospho-Erk1/2 in endothelial cells when they were treated with VEGF-A. These findings indicate that signaling mediated via VEGFR-3 activation by its cognate ligands （VEGF-C/-D） is not required for angiogenesis, and that VEGFR-3 may play a role in this process by modulating VEGFR-2-mediated signals.

Driving Circuit for AMOLED with Fault Tolerance

The defects of an OLED-based display,mainly electrical shorts,cause pixels to stay dark,decrease the brightness of a panel,severely influence the display uniformity,and also consume a considerable amount of power. In this paper, for AM-OLEDs, a novel circuit employing p-type low-temperature poly-Si thin-film transistors is introduced to offer fault-tolerant capabilities for such defects. The results show that this circuit can save significant power and maintain the luminance of the pixel without changing the driving current.

Power management unit chip design for automobile active-matrix organic light-emitting diode display module

A power management unit （PMU） chip supplying dual panel supply voltage, which has a low electro-magnetic interference （EMI） characteristic and is favorable for miniaturization, is designed. A two-phase charge pump circuit using external pumping capacitor increases its pumping current and works out the charge-loss problem by using bulk-potential biasing circuit. A low-power start-up circuit is also proposed to reduce the power consumption of the band-gap reference voltage generator. And the ring oscillator used in the ELVSS power circuit is designed with logic devices by supplying the logic power supply to reduce the layout area. The PMU chip is designed with MagnaChip＇s 0.25 μ high-voltage process. The driving currents of ELVDD and ELVSS are more than 50 mA when a SPICE simulation is done.

A brief review of innovative strategies towards structure design of practical electronic display device

Display devices have significantly changed our daily life for decades,from the watches,television,to the laptop and smartphone.As the desire of advanced display device with high-resolution,long operation life and lightweight properties,several display techniques have been demonstrated.There are mainly four types of electronic display device:cathode ray tube(CRT),liquid-crystal display(LCD),organic light-emitting diode(OLED),and micro-LED.Due to the different working principles and device structures,each type of display device has its special characteristic properties.The performance of devices could be adjusted through the material selection or device design.With careful device structure regulation,not only the efficiency but also the stability would be improved.Herein,a brief review of innovative strategies towards the structure design is presented.

Ⅰ-Ⅲ-Ⅵ chalcogenide semiconductor nanocrystals:Synthesis,properties,and applications

Colloidal semiconductor nanocrystals have been proven to be promising candidates for applications in low‐cost and high‐performance photovoltaics,bioimaging,and photocatalysis due to their novel size‐and shape‐dependent properties.Among the colloidal systems,I‐III‐VI semiconductor nanocrystals(NCs)have drawn much attention in the past few decades.Compared to binary NCs,ternary I‐III‐VI NCs not only exhibit low toxicity,but also a high performance similar to that of binary NCs.In this review,we mainly focus on the synthesis,properties,and applications of I‐III‐VI NCs.We summarize the major synthesis methods,analyze their photophysical and electronic properties,and highlight some of the latest applications of I‐III‐VI NCs in solar cells,light‐emitting diodes,bioimaging,and photocatalysis.Finally,based on the information reviewed,we highlight the existing problems and challenges.