An optical fiber pyrometer prototype has been developed for accurate measurement of overheating gas temperature.The optical fiber pyrometer and its technique could have the potential of measuring temperature up to 2 0...An optical fiber pyrometer prototype has been developed for accurate measurement of overheating gas temperature.The optical fiber pyrometer and its technique could have the potential of measuring temperature up to 2 000 ℃. The operation principle of the pyrometer is based on Planck's law and Stephen-Boltzmann's law. The test results are presented.展开更多
The white organic light emitting device (OLED) with single-structure using a polymer blend as the light emitting layer is fabricated.Heat treatment is used to control the ratio between the intensities of main electrol...The white organic light emitting device (OLED) with single-structure using a polymer blend as the light emitting layer is fabricated.Heat treatment is used to control the ratio between the intensities of main electroluminescent spectral peaks.The electroluminescent spectrum of our device is quite similar to that of white inorganic LED produced by Nichia Corporation after being annealed,and its turn-on voltage can be decreased by 1 V.展开更多
The effect of rapid thermal annealing on the optical properties of astrained InAs/InP single quantum well structrure has been investigated in this paper.The luminescence intensity of the quantum well at 8 K was increa...The effect of rapid thermal annealing on the optical properties of astrained InAs/InP single quantum well structrure has been investigated in this paper.The luminescence intensity of the quantum well at 8 K was increased by a factor of 4 and 1.55 meV blue shift of the quantum well photoluminescence peak was observed after annealing at the optimal condition of 700℃ for 5 s. Furthermore,we found that the luminescence efficiency of the deep radiative levels in the samples was also affected by rapid thermal annealing.Our experimental results have demonstrated that Rapid thermal annealing significantly improves the crystalline quality of strained quantum well structures after growth and is an important way for enhancement of the performance of the laser device.展开更多
Yellow light-emitting diodes(LEDs) are widely utilized in high-quality lighting, light communication,indicator lamps, etc. Owing to their outstanding material properties and device performance, the metal halide perovs...Yellow light-emitting diodes(LEDs) are widely utilized in high-quality lighting, light communication,indicator lamps, etc. Owing to their outstanding material properties and device performance, the metal halide perovskites have demonstrated a significant potential for LED applications. However, the performance of the yellow perovskite LEDs(PeLEDs) is inferior to that of their green and red counterparts, with the maximum external quantum efficiency(EQE) limited to ~3.1%. Further, a majority of the yellow PeLEDs are fabricated using the spin-coating methods. The current study reports the development of the yellow CsPbBr_(2)I PeLEDs based on an all-vacuum deposition approach, which has been widely employed in the commercial organic LEDs(OLEDs). By controlling the co-evaporation rate of CsI and PbBr;, the growth kinetics of the perovskite layer are regulated to achieve a small grain size of~31.8 nm. Consequently, an improved radiative recombination rate(8.04 × 10^(-9)cm^(3)/s) is obtained owing to the spatial confinement effect. The PeLEDs based on the optimal perovskite film demonstrate the yellow electroluminescence(574 nm) with a maximum EQE of ~3.7% and luminance of~16,200 cd/m^(2), thus, representing one of the most efficient and bright yellow PeLEDs. Overall, this study provides a useful guideline for realizing the efficient PeLEDs based on the thermal evaporation strategy and highlights the potential of PeLED as an efficient and bright yellow light source.展开更多
Using minimal photothermal material to achieve maximum evaporation rate is extremely important for practical applications of interfacial solar evaporation technology.In this work,we found that with the increase in the...Using minimal photothermal material to achieve maximum evaporation rate is extremely important for practical applications of interfacial solar evaporation technology.In this work,we found that with the increase in the size of evaporation surfaces,the evaporation rate decreased.Both experimental and numerical simulation results confirmed that when the evaporation surface size increased,the middle portion of the evaporation surface acted as a‘‘dead evaporation zone”with little contribution to water evaporation.Based on this,the middle portion of the evaporation surface was selectively removed,and counterintuitively,both the evaporation rate and vapor output were increased due to the reconfigured and enhanced convection above the entire evaporation surface.As such,this work developed an important strategy to achieve a higher evaporation rate and increased vapour output while using less material.展开更多
Colloidal quantum dots(QDs)are a unique class of emissive materials with size-tunable emission wavelengths,saturated emission colors,near-unity luminance efficiency,inherent photo-and thermal-stability,and excellent s...Colloidal quantum dots(QDs)are a unique class of emissive materials with size-tunable emission wavelengths,saturated emission colors,near-unity luminance efficiency,inherent photo-and thermal-stability,and excellent solution processability.Display based on quantum-dot light-emitting diodes(QLED)may combine the superior properties of QDs,the benefits of solution-based fabrication techniques,and the advantages of self-emission devices,which promises an unprecedented generation of cost-effective,large-area,energysaving,wide-color-gamut,ultra-thin and flexible displays.展开更多
The ZnO layer with thickness of 1.6 jim in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS sub- strate with gallium. The optical property of the ZnO thick layer was investigated by time-resol...The ZnO layer with thickness of 1.6 jim in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS sub- strate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton （D^0X） and donor-acceptor pair （DAP） emission peaks with large full-width at half-maximums （FWHMs） at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D^0X emission was stronger than that of the DAP emission at measuring temperatures of 10-300 K.展开更多
文摘An optical fiber pyrometer prototype has been developed for accurate measurement of overheating gas temperature.The optical fiber pyrometer and its technique could have the potential of measuring temperature up to 2 000 ℃. The operation principle of the pyrometer is based on Planck's law and Stephen-Boltzmann's law. The test results are presented.
文摘The white organic light emitting device (OLED) with single-structure using a polymer blend as the light emitting layer is fabricated.Heat treatment is used to control the ratio between the intensities of main electroluminescent spectral peaks.The electroluminescent spectrum of our device is quite similar to that of white inorganic LED produced by Nichia Corporation after being annealed,and its turn-on voltage can be decreased by 1 V.
文摘The effect of rapid thermal annealing on the optical properties of astrained InAs/InP single quantum well structrure has been investigated in this paper.The luminescence intensity of the quantum well at 8 K was increased by a factor of 4 and 1.55 meV blue shift of the quantum well photoluminescence peak was observed after annealing at the optimal condition of 700℃ for 5 s. Furthermore,we found that the luminescence efficiency of the deep radiative levels in the samples was also affected by rapid thermal annealing.Our experimental results have demonstrated that Rapid thermal annealing significantly improves the crystalline quality of strained quantum well structures after growth and is an important way for enhancement of the performance of the laser device.
基金supported by the National Natural Science Foundation of China(62050039 61725401 5171101030 51761145048 62004075 62005089 and 51902113)the National Key R&D Program of China(2016YFA0204000 and 2016YFB0201204)+2 种基金the Fundamental Research Funds for the Central Universities(HUST: 2019421JYCXJJ004)the Fund for Innovative Research Groups of the Natural Science Foundation of Hubei Province(2020CFA034)the Graduates’ Innovation Fund of Huazhong University of Science and Technology(HUST)(2021yjscxcy036)。
文摘Yellow light-emitting diodes(LEDs) are widely utilized in high-quality lighting, light communication,indicator lamps, etc. Owing to their outstanding material properties and device performance, the metal halide perovskites have demonstrated a significant potential for LED applications. However, the performance of the yellow perovskite LEDs(PeLEDs) is inferior to that of their green and red counterparts, with the maximum external quantum efficiency(EQE) limited to ~3.1%. Further, a majority of the yellow PeLEDs are fabricated using the spin-coating methods. The current study reports the development of the yellow CsPbBr_(2)I PeLEDs based on an all-vacuum deposition approach, which has been widely employed in the commercial organic LEDs(OLEDs). By controlling the co-evaporation rate of CsI and PbBr;, the growth kinetics of the perovskite layer are regulated to achieve a small grain size of~31.8 nm. Consequently, an improved radiative recombination rate(8.04 × 10^(-9)cm^(3)/s) is obtained owing to the spatial confinement effect. The PeLEDs based on the optimal perovskite film demonstrate the yellow electroluminescence(574 nm) with a maximum EQE of ~3.7% and luminance of~16,200 cd/m^(2), thus, representing one of the most efficient and bright yellow PeLEDs. Overall, this study provides a useful guideline for realizing the efficient PeLEDs based on the thermal evaporation strategy and highlights the potential of PeLED as an efficient and bright yellow light source.
基金financial support from the Australian Research Council(FT190100485 and DP220100583)financial support from the China Scholarship Council for primary scholarshipsthe Future Industries Institute for top up scholarships。
文摘Using minimal photothermal material to achieve maximum evaporation rate is extremely important for practical applications of interfacial solar evaporation technology.In this work,we found that with the increase in the size of evaporation surfaces,the evaporation rate decreased.Both experimental and numerical simulation results confirmed that when the evaporation surface size increased,the middle portion of the evaporation surface acted as a‘‘dead evaporation zone”with little contribution to water evaporation.Based on this,the middle portion of the evaporation surface was selectively removed,and counterintuitively,both the evaporation rate and vapor output were increased due to the reconfigured and enhanced convection above the entire evaporation surface.As such,this work developed an important strategy to achieve a higher evaporation rate and increased vapour output while using less material.
文摘Colloidal quantum dots(QDs)are a unique class of emissive materials with size-tunable emission wavelengths,saturated emission colors,near-unity luminance efficiency,inherent photo-and thermal-stability,and excellent solution processability.Display based on quantum-dot light-emitting diodes(QLED)may combine the superior properties of QDs,the benefits of solution-based fabrication techniques,and the advantages of self-emission devices,which promises an unprecedented generation of cost-effective,large-area,energysaving,wide-color-gamut,ultra-thin and flexible displays.
基金supported by the National Natural Science Foundation of China(Grant No.51202191)Natural Science Basic Research Plan in Shaanxi Province of China(Grant No.2012JQ6002)Scientific Research Program Funded by Shaanxi Provincial Education Department of China(Grant No.12JK0427)
文摘The ZnO layer with thickness of 1.6 jim in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS sub- strate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton （D^0X） and donor-acceptor pair （DAP） emission peaks with large full-width at half-maximums （FWHMs） at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D^0X emission was stronger than that of the DAP emission at measuring temperatures of 10-300 K.
