基于F离子注入隔离技术实现一种新型微缩化发光二极管(micromicro-LED)阵列器件,并系统研究注入能量及发光孔径对micro-LED阵列器光电性能的影响.研究结果表明:相比于F离子50 ke V单次注入器件, 50/100 ke V两次注入器件具有更好的光电...基于F离子注入隔离技术实现一种新型微缩化发光二极管(micromicro-LED)阵列器件,并系统研究注入能量及发光孔径对micro-LED阵列器光电性能的影响.研究结果表明:相比于F离子50 ke V单次注入器件, 50/100 ke V两次注入器件具有更好的光电性能,器件反向漏电降低8.4倍,光输出功率密度提升1.3倍.同时,在不同的发光孔径(6, 8, 10μm)条件下,器件反向漏电流均为3.4×10–8 A,但正向工作电压随孔径增大而减小,分别为3.3, 3.1, 2.9 V.此外,器件不同发光孔径的有效发光面积比(实际发光面积与器件面积之比)分别为85%, 87%, 92%.与传统台面刻蚀micro-LED器件相比,离子注入隔离技术实现的micro-LED器件具有较低反的向漏电流密度、较高的光输出密度及有效发光面积比.展开更多
Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied...Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied for current confinement.Output light power of 10.1mW and slope efficiency of 0.462mW/mA are obtained under room temperature,pulse operation,and injection current of 28mA.The maximum light power is 13.1mW under pulse operation.Output light power of 7.1mW,lasing wavelength of 974nm,and FWHM of 0.6nm are obtained under CW condition.The study of oxide-aperture influence on threshold current and differential resistance shows that lower threshold current can be obtained with a smaller oxide-aperture diameter.展开更多
文摘Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied for current confinement.Output light power of 10.1mW and slope efficiency of 0.462mW/mA are obtained under room temperature,pulse operation,and injection current of 28mA.The maximum light power is 13.1mW under pulse operation.Output light power of 7.1mW,lasing wavelength of 974nm,and FWHM of 0.6nm are obtained under CW condition.The study of oxide-aperture influence on threshold current and differential resistance shows that lower threshold current can be obtained with a smaller oxide-aperture diameter.
