Progress in Understanding Color Maintenance in Solid-State Lighting Systems

In this paper, progresses of color maintenance, also known as color shift, in solid-state lighting(SSL) systems are thoroughly reviewed. First, color shift is introduced and a few examples are given from different real-life industrial conditions. Different degradation mechanisms in different parts of the system are also explained. Different materials used as lenses/encapsulants in light-emitting diode(LED)-based products are introduced and their contributions to color shift are discussed. Efforts put into standardization, characterizing, and predicting lumen maintenance are also briefly reviewed in this paper.

LED Failure Modes Implications in Ex-e Applications

Design reliable and safe LED （light emitting diode） lighting equipment for potentially explosive atmospheres should require knowledge about the possible failure modes of LED sources. Nowadays, LED technology potential is not adequately considered by IECEx （International Electrotechnical Commission system for certification to standards relating to equipment for use in explosive atmospheres） yet. Standards only consider LEDs adequate for Zone 1 when luminary is realized by the Ex-d protection strategy, or ifa big limitation in terms of power is guarantee, for Ex-i mode. In particular, Ex-d LED luminaries are obtained by using heavy, thick and expensive flameproof enclosures, entrusting safety only to the mechanical strength of the case. Luminous efficiency＇s also reduced since the glass used is very thick （10% reduction of approximately every 10 mm of thickness of the glass）. The paper shows a study about different possible causes of LED failure and their implication with explosive atmospheres, investigating whether LED technology can be used safely with other safety strategy like Ex-e, which can guarantee better performance and less cost.

GO-induced effective interconnection layer for all solution-processed tandem quantum dot light-emitting diodes

Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state lighting in the future.The TQLED is a multilayer structure device which connects two or more light-emitting units by using an interconnection layer(ICL),which plays an extremely important role in the TQLED.Therefore,realizing an effective ICL is the key to obtain high-efficiency TQLEDs.In this work,the p-type materials polys(3,4-ethylenedioxythiophene),poly(styrenesulfonate)(PEDOT:PSS)and the n-type material zinc magnesium oxide(ZnMgO),were used,and an effective hybrid ICL,the PEDOT:PSS-GO/ZnMgO,was obtained by doping graphene oxide(GO)into PEDOT:PSS.The effect of GO additive on the ICL was systematically investigated.It exhibits that the GO additive brought the fine charge carrier generation and injection capacity simultaneously.Thus,the all solutionprocessed red TQLEDs were prepared and characterized for the first time.The maximum luminance of 40877 cd/m^(2) and the highest current efficiency of 19.6 cd/A were achieved,respectively,showing a 21%growth and a 51%increase when compared with those of the reference device without GO.The encouraging results suggest that our investigation paves the way for efficient all solution-processed TQLEDs.

Effects of transparent MPTMS/Ag/MoO_3 structure as anode on the performance of green organic light-emitting diodes

A transparent 3-mercaptopropyl trimethoxysilane(MPTMS)/Ag/MoO3 composite anode is introduced to fabricate green organic light-emitting diodes(OLEDs). Effects of the composite anode on brightness and operating voltage of OLEDs are researched. By optimizing the thickness of each layer of the MPTMS/Ag/MoO3 structure, the transmittance of MPTMS/Ag(8 nm)/Mo O3(30 nm) reaches over 75% at about 520 nm. The sheet resistance is 3.78 ?/□, corresponding to this MPTMS/Ag(8 nm)/MoO3(30 nm) structure. For the OLEDs with the optimized anode, the maximum electroluminescence(EL) current efficiency reaches 4.5 cd/A, and the maximum brightness is 37 036 cd/m2. Moreover, the OLEDs with the optimized anode exhibit a very low operating voltage(2.6 V) for obtaining brightness of 100 cd/m2. We consider that the improved device performance is mainly attributed to the enhanced hole injection resulting from the reduced hole injection barrier height. Our results indicate that employing the MPTMS/Ag/MoO3 as a composite anode can be a simple and promising technique in the fabrication of low-operating voltage and high-brightness OLEDs.