The alloy temperature dependence of Voffset and Rcontact is studied, and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact, is given for thin base HBTs. In addition,the reason for ...The alloy temperature dependence of Voffset and Rcontact is studied, and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact, is given for thin base HBTs. In addition,the reason for the high Voffset at high alloy temperature is interpreted using Schottky clamped theory. The lower Voffset of our U-shaped emitter HBT than that of traditional strip emitter HBTs is explained.展开更多
Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and ...Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and low knee voltage (<0 5V).Over 14V of the collector base breakdown voltage BV CBO and over 9V of the collector emitter breakdown voltage BV CEO are obtained.For a self aligned InGaP/GaAs HBT with 2μm×10μm emitter area,the f T is extrapolated to 92GHz and f max is extrapolated to 105GHz.These great values are obtained due to the hexagonal emitter and laterally etched undercut (LEU) of collector,indicating the great potential of InGaP/GaAs HBTs for high speed digital circuit and microwave power applications.展开更多
文摘The alloy temperature dependence of Voffset and Rcontact is studied, and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact, is given for thin base HBTs. In addition,the reason for the high Voffset at high alloy temperature is interpreted using Schottky clamped theory. The lower Voffset of our U-shaped emitter HBT than that of traditional strip emitter HBTs is explained.
文摘Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and low knee voltage (<0 5V).Over 14V of the collector base breakdown voltage BV CBO and over 9V of the collector emitter breakdown voltage BV CEO are obtained.For a self aligned InGaP/GaAs HBT with 2μm×10μm emitter area,the f T is extrapolated to 92GHz and f max is extrapolated to 105GHz.These great values are obtained due to the hexagonal emitter and laterally etched undercut (LEU) of collector,indicating the great potential of InGaP/GaAs HBTs for high speed digital circuit and microwave power applications.
