晶体管、MOS器件

Y2000-62028-1047 0100246新的双 P 阱横向发射极开关晶闸管=A novel doubleP-well lateral emitter wwitched thyristor[会,英]/Qin,Z.X.& Sankara.E.M.//1999 IEEE 49th ElectronicComponents and Technology Conference.—1047～1050(PC)Y2000-62185-32 0100247退化 P-MOSFET 热载流子电荷抽运电流模拟=Simu-lation of charge pumping current in hot-carrier

晶体管、MOS器件

Y2000-62007-2 0018093发射极开关晶闸管(ETO)介绍:单位开关增益容量的数值与试验证明=Introducing the emitter turn-offthyristor(ETO):numerical and experimental demon-stration of unity turn-off gain capability[会,英]/Li,Y.X.&Huang,A.Q.//Ⅵ IEEE International PowerElectronics Congress.—2～9(PC)

晶体管、MOS 器件

Y99-61525-139 0000286低噪声放大器用的 GaAs MESFETs 的最佳宽度=Onthe optimum width of GaAs MESFETs for low noise am-plifiers[会,英]/Taylor,S.S.//1998 IEEE Radio Fre-quency Integrated Circuits Symposium.—139～142(AZ)Y99-61556-1603 0000287包含温度和击穿效应的功率 MESFET 的非线性模型=A nonlinear model of the power MESFET includingtemperature and breakdown effects[会,英]/Rizzoli,V.& Costanzo.A.//1998 IEEE MTT-s International Mi-