介绍了塑壳式断路器分断短路电流时的integral from n=i to 2 dt的计算方法,即通过断路器分断短路电流的波形图或根据某一断路器分断时的波形图来计算,并列表给出了常用的发热电阻材料和热双金属元件材料的integral from n=i to 2 dt计...介绍了塑壳式断路器分断短路电流时的integral from n=i to 2 dt的计算方法,即通过断路器分断短路电流的波形图或根据某一断路器分断时的波形图来计算,并列表给出了常用的发热电阻材料和热双金属元件材料的integral from n=i to 2 dt计算式。展开更多
Multichip on Ahnnintnn Metal Plate（MOAMP） technology with simple structure and low thermal resistance is developed for effective heat reratrval of Light Emitting Diode（LED） p-n junction and LED lighting module to ...Multichip on Ahnnintnn Metal Plate（MOAMP） technology with simple structure and low thermal resistance is developed for effective heat reratrval of Light Emitting Diode（LED） p-n junction and LED lighting module to have high reliability. The thermal resistance of LED modules was numerical and experimental. Thermal resistance from the jtnction to aluminten metal plate, considering input power of IFD module using MOAMP technology, is 3.02 K/W, 3.23 K/W for the measured and calculated, respectively. We expect that the reported MOAMP technology with low thermal resistance will be a promising solution for high power LED fighting modules.展开更多
文摘Multichip on Ahnnintnn Metal Plate（MOAMP） technology with simple structure and low thermal resistance is developed for effective heat reratrval of Light Emitting Diode（LED） p-n junction and LED lighting module to have high reliability. The thermal resistance of LED modules was numerical and experimental. Thermal resistance from the jtnction to aluminten metal plate, considering input power of IFD module using MOAMP technology, is 3.02 K/W, 3.23 K/W for the measured and calculated, respectively. We expect that the reported MOAMP technology with low thermal resistance will be a promising solution for high power LED fighting modules.
