Defects in Sb implanted Zn O single crystals have been studied by using photoluminescence(PL) spectroscopy,X-ray diffraction(XRD) and Raman scattering.Electrical properties of the samples were analyzed by Hall effect ...Defects in Sb implanted Zn O single crystals have been studied by using photoluminescence(PL) spectroscopy,X-ray diffraction(XRD) and Raman scattering.Electrical properties of the samples were analyzed by Hall effect measurement.The results indicate that the annealed Sb-implanted sample is n-type with a free electron concentration of the same amplitude as the calculated implantation concentration.The well-known oxygen vacancy related deep level green PL band is suppressed in the as-implanted sample and recovers to the level close to the as-grown Zn O single crystal after annealing.These phenomena suggest that a large portion of as-implanted Sb atoms occupy oxygen lattice site in an unstable state and move to the interstitial site,forming the complex donor defect upon high temperature annealing,resulting in n-type conduction even if the implantation dose is quite high.展开更多
Zinc nanoplates were grown using thermal evaporation without catalyst or template involved.Tunneling electron microscopy and selected area electron diffraction analyses showed that the plates were single crystals with...Zinc nanoplates were grown using thermal evaporation without catalyst or template involved.Tunneling electron microscopy and selected area electron diffraction analyses showed that the plates were single crystals with either {0001} or {11 20} as basal surfaces.The morphological characteristics were explained in terms of the intrinsic growth anisotropy of zinc,the surface energy of the nano-crystals,the size of the critical nucleus and the migration of the adatoms.Our results suggested a promising low-cost route for synthesis of pure zinc nanoplates which could be used as precursor for further preparing core-shell nanoplate structures.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61474104)
文摘Defects in Sb implanted Zn O single crystals have been studied by using photoluminescence(PL) spectroscopy,X-ray diffraction(XRD) and Raman scattering.Electrical properties of the samples were analyzed by Hall effect measurement.The results indicate that the annealed Sb-implanted sample is n-type with a free electron concentration of the same amplitude as the calculated implantation concentration.The well-known oxygen vacancy related deep level green PL band is suppressed in the as-implanted sample and recovers to the level close to the as-grown Zn O single crystal after annealing.These phenomena suggest that a large portion of as-implanted Sb atoms occupy oxygen lattice site in an unstable state and move to the interstitial site,forming the complex donor defect upon high temperature annealing,resulting in n-type conduction even if the implantation dose is quite high.
基金supported by the National Science Foundation of China(Grant Nos. 10875144 and 10979057)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No.200800271045)
文摘Zinc nanoplates were grown using thermal evaporation without catalyst or template involved.Tunneling electron microscopy and selected area electron diffraction analyses showed that the plates were single crystals with either {0001} or {11 20} as basal surfaces.The morphological characteristics were explained in terms of the intrinsic growth anisotropy of zinc,the surface energy of the nano-crystals,the size of the critical nucleus and the migration of the adatoms.Our results suggested a promising low-cost route for synthesis of pure zinc nanoplates which could be used as precursor for further preparing core-shell nanoplate structures.
