For the transient behavior of a semiconductor device, the modified method of characteristics with alternating-direction finite element procedures for nonrectangular region is put forward. Some techniques, such as calc...For the transient behavior of a semiconductor device, the modified method of characteristics with alternating-direction finite element procedures for nonrectangular region is put forward. Some techniques, such as calculus of variations, isoparametric transformation，patch approximation, operator-splitting, characteristic method, symmetrical reflection,energy method, negative norm estimate and a prior estimates and techniques, are employed. In the nonrectangular region case, optimal order estimates in L^2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.展开更多
基金This research is supported by the Major State Basic Research Program of China (Grant No. 19990328), the National Tackling Key Problem Program, the National Science Foundation of China (Grant Nos. 10271066 and 10372052), the Doctorate Foundation of th
文摘For the transient behavior of a semiconductor device, the modified method of characteristics with alternating-direction finite element procedures for nonrectangular region is put forward. Some techniques, such as calculus of variations, isoparametric transformation，patch approximation, operator-splitting, characteristic method, symmetrical reflection,energy method, negative norm estimate and a prior estimates and techniques, are employed. In the nonrectangular region case, optimal order estimates in L^2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.
