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Genetic variations of wood properties and growth characters of Ko-rean pines from different provenances 被引量:4
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作者 王慧梅 夏德安 +1 位作者 王文杰 杨书文 《Journal of Forestry Research》 SCIE CAS CSCD 2002年第4期277-280,337,共4页
Totally 26 provenance stands of 17-year-old Korean pine were selected for investigating wood properties and growth characters in Mao抏rshan Experimental Forest Farm of Northeast Forestry University in 1999. The anatom... Totally 26 provenance stands of 17-year-old Korean pine were selected for investigating wood properties and growth characters in Mao抏rshan Experimental Forest Farm of Northeast Forestry University in 1999. The anatomical property indexes, including tracheid length, tracheid diameter and wall-indiameter ratio, and the physical property indexes, such as growth ring width, late wood percentage and growth ring density, were measured for wood properties. Growth character indexes, including tree height and diameter at breast height, were also measured. The analytical results showed that there exited obviously dif-ference in wood property indexes between different provenances, which is suggested that wood properties are controlled by their genetic differences. The growth character indexes of Korean pines presented significant difference and they might also be controlled by their genetic differences. Most parameters of wood properties mainly varied in the direction of longitude, but the parameters of growth characters varied in the direction of latitude. 展开更多
关键词 Korean pine Provenance trial Wood properties Geographical variation Genetic variation
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大陆俯冲带变质过程中熔/流体活动的锆石学记录 被引量:7
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作者 陈仁旭 郑永飞 《科学通报》 EI CAS CSCD 北大核心 2013年第22期2227-2232,共6页
对大别-苏鲁造山带超高压变质岩开展了综合的锆石学研究,包括锆石矿相学(内部结构和外部形态)、U-Pb年代学、矿物包裹体、微量元素以及Lu-Hf和O同位素分析.结果不仅深化了变质锆石学研究,识别出了不同类型的锆石,而且为大陆俯冲带变质... 对大别-苏鲁造山带超高压变质岩开展了综合的锆石学研究,包括锆石矿相学(内部结构和外部形态)、U-Pb年代学、矿物包裹体、微量元素以及Lu-Hf和O同位素分析.结果不仅深化了变质锆石学研究,识别出了不同类型的锆石,而且为大陆俯冲带变质过程中熔/流体活动性质提供了重要地球化学信息.由于变质熔/流体活动程度和物理化学性质差异,原岩岩浆锆石经历了3种不同类型变质重结晶作用,包括固态重结晶、交代重结晶和溶解重结晶.新生长锆石可以从脱水来源的富水流体和深熔来源的含水熔体中结晶形成.不同类型的受变质和变质成因锆石显示出不同的元素和同位素组成差异.原岩性质控制着富水流体可获得性,而熔/流体的性质则受变质温压条件控制.大陆俯冲带变质过程中熔/流体活动是原岩锆石溶解和变质锆石生长的基本原因,因此变质锆石的生长可以用作熔/流体活动的指示剂. 展开更多
关键词 变质锆石学 变质生长 变质重结晶 流体活动 大陆俯冲带
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Effect of flupirtine on the growth and viability of U373 malignant glioma cells
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作者 Elango Panchanathan Gnanasambandan Ramanathan Bhaskar Venkata Kameswara Subrahmanya Lakkakula 《Cancer Biology & Medicine》 SCIE CAS CSCD 2013年第3期142-147,共6页
Objective: Flupirtine is a non-opioid analgesic without antipyretic or antiphlogistic properties but with favorable tolerability in humans. "Ibis analgesic also exhibits neuroprotective activities. Furthermore, flup... Objective: Flupirtine is a non-opioid analgesic without antipyretic or antiphlogistic properties but with favorable tolerability in humans. "Ibis analgesic also exhibits neuroprotective activities. Furthermore, flupirtine antagonizes glutamate- and . , 2+ NMDA-mduced mtracellular levels of Ca and counteracts the effects of focal cerebral Lscherma. Although fluplrtme has been used to relieve pain caused by different diseases and clinical procedures, information on the safety and efficacy of flupirtine is limited. "fhe present study was conducted to investigate the neuroprotective effects of flupirtine on U373 malignant glioma (MG) cell lines. Methods: Cellviability and cell cycle analysis was performed by MTF assay and flow cytomet-,'y, respectively. Results: Variations in the growth of U373 MG cells in $ mM N-methyl-D-aspartate (NMDA), 1 mM flupirtine, and combined treatment indicated the antagonistic effects of NMDA and flupirtine on MG cell lines. The variation in the percentage of gated cellpopulation in different cell cycle phases showed significant variations after 48 h of treatment. Conclusion: Flupirtine has neuroprotective effect of on U373 MG cells, which limits its use in the pain management of brain tumors. This property warrants further studies using animal models and large-scale clinical trials. 展开更多
关键词 FLUPIRTINE N-METHYLASPARTATE ANALGESICS GLIOMA
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Fabrication of 0.3-m T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition 被引量:1
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作者 TANG ChakWah LAU KeiMay 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第4期644-648,共5页
We present an InGaAs metamorphic high electron mobility transistor (mHEMT) grown using Metalorganic Chemical Vapor Deposition (MOCVD) on an n-type silicon substrate with the introduction of an effective multi-stag... We present an InGaAs metamorphic high electron mobility transistor (mHEMT) grown using Metalorganic Chemical Vapor Deposition (MOCVD) on an n-type silicon substrate with the introduction of an effective multi-stage buffering scheme. Fabrication and performance of a high-frequency 0.3μm gate-length depletion-mode A10.s0In0.s0As/Ga0.47In0.53As mHEMT is re- ported for the first time. Using a combined optical and e-beam photolithography technology, submicron mHEMT devices on Si have been achieved. The non-alloyed ohmic contact resistance Rc was as low as 0.065 Ω-mm. A maximum transconductance up to 761 mS/ram was measured. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 72.8 and 74.5 GHz, respectively. This device has the highest fw yet reported for a 0.3-μm gate-length Si-based mHEMT grown using MOCVD. A high voltage gain, gm/gds, of 40.6 is observed in the device. 展开更多
关键词 silicon METAMORPHIC HEMT MOCVD
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