Y2002-63306-626 0309486栅极长度为100nm 高电子迁移率晶体管的设计与实现=Design and realization of sub 100nm gate lengthHEMTs[会,英]/Parenty,T.& Bollaert,S.//2001IEEE International Conference on Indiurn Phosphide and...Y2002-63306-626 0309486栅极长度为100nm 高电子迁移率晶体管的设计与实现=Design and realization of sub 100nm gate lengthHEMTs[会,英]/Parenty,T.& Bollaert,S.//2001IEEE International Conference on Indiurn Phosphide andRelated Materials.—626~629(E)展开更多
文摘Y2002-63306-626 0309486栅极长度为100nm 高电子迁移率晶体管的设计与实现=Design and realization of sub 100nm gate lengthHEMTs[会,英]/Parenty,T.& Bollaert,S.//2001IEEE International Conference on Indiurn Phosphide andRelated Materials.—626~629(E)